Manufacturing method for electronic component

Abstract

A manufacturing method for an electronic component according to an aspect of the present invention includes: forming a first metal layer on a substrate; forming a second metal layer on the first metal layer; forming a mask made of an organic resin layer on the second metal layer; performing plasma etching on the second metal layer by using a reactant gas including fluorine via the mask to thereby form a recess portion in a layered film of the organic resin layer and the second metal layer; performing oxygen ashing treatment on an inner surface of the recess portion; and forming a third metal layer in the recess portion by electroplating treatment after the oxygen ashing treatment.

The invention claimed is: 
     
       1. A manufacturing method for an electronic component, comprising:
 forming a first metal layer on a substrate; 
 forming a second metal layer on the first metal layer; 
 forming a mask made of an organic resin layer on the second metal layer; 
 performing plasma etching on the second metal layer by using a reactant gas including fluorine via the mask to thereby form a recess portion in a layered film of the organic resin layer and the second metal layer; 
 performing oxygen ashing treatment on an inner surface of the recess portion; and 
 forming a third metal layer in the recess portion by electroplating treatment after the oxygen ashing treatment. 
 
     
     
       2. The manufacturing method for an electronic component according to  claim 1 , wherein
 the second metal layer includes titanium. 
 
     
     
       3. The manufacturing method for an electronic component according to  claim 1 , wherein
 the etching step is performed by using a mixed gas of oxygen, nitrogen, and tetrafluoromethane as the reactant gas. 
 
     
     
       4. The manufacturing method for an electronic component according to  claim 1 , wherein
 the oxygen ashing treatment step is performed by using oxygen plasma mainly including an oxygen radical.