Plasma processing apparatus

Abstract

A plasma processing apparatus with improved yield, adapted to include a vacuum container, a processing chamber disposed inside thereof, and in which a plasma is formed, a sample table disposed in the processing chamber and on which a sample is placed, two electrodes which have a film shape, disposed within the sample table, and to which power for attracting the sample is supplied so that different polarities are formed, a coiled portion in which two power supply lines are wound in parallel around the same axis, and a bypass line which connects the two power supply lines between the coiled portion and the two electrodes and has a capacitor.

The invention claimed is: 
     
       1. A plasma processing apparatus comprising:
 a processing chamber which is disposed inside a vacuum container and in which a plasma is formed; 
 a sample table which is disposed in the processing chamber and on which a sample to be processed using the plasma is placed; 
 two electrodes which have a film shape, configure an upper surface of the sample table, are disposed within a film, on which the sample is placed and which is made of a dielectric, and to which power for attracting the sample is supplied so that different polarities are formed; 
 a coiled portion in which two power supply lines, which are disposed on a power supply path between the two electrodes and each power supply and connected to each of the two electrodes, are wound in parallel around the same axis; and 
 a bypass line which connects the two power supply lines between the coiled portion and the two electrodes and has a capacitor. 
 
     
     
       2. The plasma processing apparatus according to  claim 1 , further comprising:
 a high frequency power supply that supplies high frequency power for forming an electric field for forming the plasma in the processing chamber, 
 wherein a frequency of the high frequency power is in a range of 30 to 300 MHz. 
 
     
     
       3. The plasma processing apparatus according to  claim 2 ,
 wherein the coiled portion is on the two power supply lines and a distance from the two electrodes of the line power supply lines is within one wavelength of the high frequency power. 
 
     
     
       4. The plasma processing apparatus according to  claim 3 , further comprising:
 a filter that is disposed between the coiled portion on the two power supply lines and each of the power supplies and filters the high frequency power. 
 
     
     
       5. The plasma processing apparatus according to  claim 2 , further comprising:
 a filter that is disposed between the coiled portion on the two power supply lines and each of the power supplies and filters the high frequency power. 
 
     
     
       6. The plasma processing apparatus according to  claim 2 ,
 wherein the coiled portion does not have a core inside thereof. 
 
     
     
       7. The plasma processing apparatus according to  claim 6 , further comprising:
 a filter that is disposed between the coiled portion on the two power supply lines and each of the power supplies and filters the high frequency power. 
 
     
     
       8. The plasma processing apparatus according to  claim 1 ,
 wherein the coiled portion does not have a core inside thereof. 
 
     
     
       9. The plasma processing apparatus according to  claim 8 ,
 wherein the coiled portion is on the two power supply lines and a distance from the two electrodes of the line power supply lines is within one wavelength of the high frequency power.