Semiconductor structure and manufacturing method thereof

Abstract

A semiconductor structure includes a substrate including a first surface, a second surface opposite to the first surface, a sidewall substantially orthogonal to the first surface and the second surface; and a metallic layer surrounding and connected with the sidewall of the substrate, wherein the metallic layer includes an exposed surface substantially level with the first or second surface of the substrate. Further, a method of manufacturing the semiconductor structure is also disclosed.

The invention claimed is: 
     
       1. A semiconductor structure, comprising:
 a substrate including a first surface, a second surface opposite to the first surface, a sidewall substantially orthogonal to the first surface and the second surface; and 
 a metallic layer surrounding and connected with the sidewall of the substrate; 
 a die disposed over the second surface of the substrate; and 
 a conductive bump disposed at the first surface of the substrate, 
 wherein the metallic layer includes an exposed surface substantially level with the first surface of the substrate. 
 
     
     
       2. The semiconductor structure of  claim 1 , wherein the metallic layer entirely covers the sidewall of the substrate. 
     
     
       3. The semiconductor structure of  claim 1 , wherein the metallic layer is disposed conformal to the sidewall of the substrate. 
     
     
       4. The semiconductor structure of  claim 1 , wherein the metallic layer includes a second sidewall substantially orthogonal to the exposed surface and substantially parallel to the sidewall of the substrate. 
     
     
       5. The semiconductor structure of  claim 1 , wherein the metallic layer covers a corner of the substrate. 
     
     
       6. The semiconductor structure of  claim 1 , further comprising a second conductive bump disposed between the substrate and the die. 
     
     
       7. The semiconductor structure of  claim 1 , further comprising a heat dissipation member disposed over the die, the substrate and the metallic layer. 
     
     
       8. The semiconductor structure of  claim 7 , wherein the heat dissipation member is disposed over at least a portion of the second surface of the substrate and at least a portion of the exposed surface of the metallic layer. 
     
     
       9. The semiconductor structure of  claim 8 , wherein the heat dissipation member is attached to the metallic layer by an adhesive. 
     
     
       10. The semiconductor structure of  claim 1 , wherein the metallic layer includes aluminum, copper, nickel, gold or silver. 
     
     
       11. A semiconductor structure, comprising:
 a substrate including a first sidewall; 
 a first polymeric layer disposed over the substrate and including a second sidewall coupled and aligned with the first sidewall; 
 a second polymeric layer disposed below the substrate and including a third sidewall coupled and aligned with the first sidewall; and 
 a metallic layer surrounding and connected with the first sidewall, the second sidewall and the third sidewall. 
 
     
     
       12. The semiconductor structure of  claim 11 , wherein the first polymeric layer is separated from the second polymeric layer. 
     
     
       13. The semiconductor structure of  claim 11 , further comprising:
 a die disposed over the first polymeric layer; 
 a first conductive bump disposed at the second polymeric layer; 
 a second conductive bump disposed between the die and the first polymeric layer. 
 
     
     
       14. The semiconductor structure of  claim 11 , wherein the metallic layer entirely covers the first sidewall, the second sidewall and the third sidewall. 
     
     
       15. The semiconductor structure of  claim 11 , wherein the metallic layer includes an exposed surface substantially level with a surface of the second polymeric layer. 
     
     
       16. The semiconductor structure of  claim 11 , wherein the metallic layer is substantially orthogonal to the substrate, the first polymeric layer and the second polymeric layer. 
     
     
       17. A method of manufacturing a semiconductor structure, comprising:
 providing a substrate including a first surface, a second surface opposite to the first surface, a sidewall substantially orthogonal to the first surface and the second surface; 
 disposing a metallic layer surrounding and connected with the sidewall of the substrate; 
 disposing a die over the second surface of the substrate; and 
 disposing a conductive bump at the first surface of the substrate, 
 
       wherein the disposing of the metallic layer includes forming an exposed surface substantially level with the first surface of the substrate. 
     
     
       18. The method of  claim 17 , wherein the metallic layer is disposed by coating, rolling or sticking. 
     
     
       19. The method of  claim 17 , further comprising disposing a polymeric layer over the second surface of the substrate, wherein the disposing of the metallic layer is performed after the disposing of the polymeric layer. 
     
     
       20. The method of  claim 17 , wherein the sidewall of the substrate is formed by singulation operations.