Film deposition method

Abstract

A film deposition method is provided. In the method, chlorine gas is activated in a plasma generator, and an adsorption inhibitor group is formed by adsorbing the activated chlorine gas on a surface of a substrate in a processing chamber. A source gas containing chlorine and one of silicon and a metal is adsorbed on a region without the adsorption inhibitor group of the surface of the substrate, and a nitride film is deposited by supplying a nitriding gas to the surface of the substrate and causing the nitriding gas to react with the source gas. The substrate on which the nitride film is deposited is carried out of the processing chamber, and an inside of the plasma generator is purged with activated oxygen gas.

What is claimed is: 
     
       1. A film deposition method, comprising steps of:
 activating chlorine gas in a plasma generator; 
 forming an adsorption inhibitor group by adsorbing the activated chlorine gas on a surface of a substrate in a processing chamber; 
 adsorbing a source gas containing chlorine and one of silicon and a metal on a region without the adsorption inhibitor group of the surface of the substrate; 
 depositing a nitride film by supplying a nitriding gas to the surface of the substrate and causing the nitriding gas to react with the source gas; 
 carrying the substrate on which the nitride film is deposited out of the processing chamber; and 
 purging an inside of the plasma generator with activated oxygen gas. 
 
     
     
       2. The film deposition method as claimed in  claim 1 ,
 wherein the steps of forming the adsorption inhibitor group, adsorbing the source gas and depositing the nitride film are performed as one cycle, and 
 wherein the nitride film is deposited by repeating the one cycle a predetermined number of times. 
 
     
     
       3. The film deposition method as claimed in  claim 2 , wherein the step of activating the chlorine gas is continuously performed during the one cycle. 
     
     
       4. The film deposition method as claimed in  claim 1 , further comprising a step of:
 carrying a second substrate into the processing chamber after the step of purging the inside of the plasma generator with the activated oxygen gas. 
 
     
     
       5. The substrate processing method as claimed in  claim 4 , wherein the steps of activating the chlorine gas, forming the adsorption inhibitor group, adsorbing the source gas, depositing the nitride film, purging the inside of the plasma generator with the activated oxygen gas and carrying the second substrate into the processing chamber are repeated multiple times. 
     
     
       6. The film deposition method as claimed in  claim 1 , wherein the metal includes one of titanium and aluminum. 
     
     
       7. The film deposition method as claimed in  claim 1 , wherein the substrate is a silicon substrate. 
     
     
       8. The film deposition method as claimed in  claim 1 ,
 wherein the substrate includes a depression pattern formed therein, and 
 wherein the depression pattern is filled with the nitride film deposited in the step of depositing the nitride film. 
 
     
     
       9. The film deposition method as claimed in  claim 8 ,
 wherein the activated chlorine gas adsorbs on an upper portion of the depression pattern and a flat surface of the substrate without the depression pattern, and 
 wherein the region without the adsorption inhibitor group includes a bottom surface of the depression pattern. 
 
     
     
       10. The film deposition method as claimed in  claim 1 , further comprising:
 preliminarily forming an underlying film on the surface of the substrate. 
 
     
     
       11. The film deposition method as claimed in  claim 10 , wherein the underlying film is one of a silicon nitride film and a silicon oxide film. 
     
     
       12. The film deposition method as claimed in  claim 1 , further comprising:
 depositing an underlying film on the surface of the substrate before the step of activating the chlorine gas, 
 wherein the step of depositing the underlying film comprises steps of: 
 adsorbing a silicon-containing gas on the surface of the substrate by supplying the silicon-containing gas, and 
 depositing a silicon nitride film by supplying the nitriding gas to the surface of the substrate and causing the nitriding gas to react with the silicon-containing gas adsorbed on the surface of the substrate. 
 
     
     
       13. The film deposition method as claimed in  claim 12 , wherein the underlying film is deposited by repeating the steps of adsorbing the silicon-containing gas and depositing the silicon nitride film a predetermined number of times. 
     
     
       14. The film deposition method as claimed in  claim 1 , wherein the nitriding gas is activated by plasma. 
     
     
       15. The film deposition method as claimed in  claim 14 ,
 wherein purge regions configured to purge the surface of the substrate are disposed between the activated chlorine adsorption region and the source gas adsorption region, and between the source gas adsorption region and the nitriding region, and further comprising a step of: 
 purging the surface of the substrate between the steps of forming the adsorption inhibitor group and adsorbing the source gas, and between the steps of adsorbing the source gas and depositing the nitride film. 
 
     
     
       16. The film deposition method as claimed in  claim 1 ,
 wherein the substrate is arranged along a circumferential direction on a turntable, 
 wherein an activated chlorine adsorption region, a source gas adsorption region and a nitriding region are arranged in this order apart from each other along a rotational direction of the turntable, and 
 wherein the steps of forming the adsorption inhibitor group, adsorbing the source gas and depositing the nitriding film are sequentially repeated by rotating the turntable in the rotational direction. 
 
     
     
       17. The film deposition method as claimed in  claim 1 ,
 wherein the activated chlorine gas is generated in a remote plasma generator, and 
 wherein the activated oxygen gas is generated in the remote plasma generator.