Semiconductor device having component mounted on connection bar and lead on top side of lead frame and method of manufacturing semiconductor device thereof

Abstract

In one example, a semiconductor device comprises a substrate and an electronic device on a top side of the substrate, a lead frame on the top side of the substrate over the electronic device, wherein the lead frame comprises a connection bar and a lead, a component mounted to the connection bar and the lead on a top side of the lead frame, and an encapsulant on the top side of the substrate, wherein the encapsulant contacts a side of the electronic device and a side of the component. Other examples and related methods are also disclosed herein.

The invention claimed is: 
     
       1. A semiconductor device, comprising:
 a substrate and an electronic device on a top side of the substrate; 
 a lead frame on the top side of the substrate over the electronic device, wherein the lead frame comprises a connection bar and a lead; 
 a component mounted to the connection bar and the lead on a top side of the lead frame; and 
 an encapsulant on the top side of the substrate, wherein the encapsulant contacts a side of the electronic device and a side of the component; 
 wherein the component comprises a first terminal coupled with a top side of the connection bar and a second terminal coupled with a top side of the lead; and 
 wherein the connection bar and the lead have a gap therebetween, and the component on the top side of the lead frame is mounted to span over the gap. 
 
     
     
       2. The semiconductor device of  claim 1 , wherein the lead frame comprises a paddle, and a downset from the paddle to the connection bar, wherein the component is mounted to the connection bar and the lead at a level lower than a top side of the paddle. 
     
     
       3. The semiconductor device of  claim 2 , further comprising an additional component on the top side of the substrate under the paddle. 
     
     
       4. The semiconductor device of  claim 3 , wherein the additional component is thermally coupled with the paddle. 
     
     
       5. The semiconductor device of  claim 1 , wherein the electronic device is below the component. 
     
     
       6. The semiconductor device of  claim 1 , wherein a top side of the encapsulant is coplanar with a top side of the lead frame. 
     
     
       7. The semiconductor device of  claim 1 , wherein the substrate comprises a pre-formed substrate. 
     
     
       8. The semiconductor device of  claim 1 , wherein the substrate comprises a redistribution layer (RDL) substrate. 
     
     
       9. The semiconductor device of  claim 1 , wherein the lead comprises a connection region electrically coupled with a conductive path of the substrate. 
     
     
       10. The semiconductor device of  claim 1 , wherein the first terminal and the second terminal are on a bottom side of the component. 
     
     
       11. A semiconductor structure, comprising:
 a substrate having a top side and a conductive path; 
 a lead frame comprising a heatsink, a connection bar, a downset between the heatsink and the connection bar, and a lead electrically coupled with the conductive path, wherein the connection bar is lower than the heatsink; 
 a first component on the top side of the substrate and coupled to the heatsink; 
 a second component on a top side of the lead frame between the connection bar and the lead; and 
 an encapsulant on the top side of the substrate contacting a side of the second component; 
 wherein the lead comprises a mounting region, a connection region, and an additional downset between the mounting region and the connection region; 
 wherein the lead is electrically coupled to the conductive path at the connection region; and 
 an electronic device on the top side of the substrate under the mounting region below the second component. 
 
     
     
       12. The semiconductor structure of  claim 11 , further comprising an interface component between a top side of the first component and a bottom side of the heatsink. 
     
     
       13. The semiconductor structure of  claim 12 , wherein the interface component comprises a thermal interface material (TIM). 
     
     
       14. The semiconductor structure of  claim 11 , wherein the electronic device is thermally coupled to the lead frame. 
     
     
       15. A method to manufacture a semiconductor device, comprising:
 providing a substrate having a top side; 
 providing an electronic device on the top side of the substrate; 
 mounting a component on a top side of a lead frame, wherein the component is mounted between a connection bar and a lead of the lead frame; 
 connecting the lead frame to the top side of the substrate; and 
 providing an encapsulant on the top side of the substrate contacting a side of the electronic device and a side of the component; 
 wherein the connection bar and the lead have a gap therebetween, and the component is mounted on the top side of the lead frame to span over the gap; and 
 wherein mounting the component comprises providing interconnects on the connection bar and the lead, and electrically connecting the component to the lead frame at the interconnects. 
 
     
     
       16. The method of  claim 15 , further comprising providing an additional component of the top side of the substrate. 
     
     
       17. The method of  claim 16 , wherein the additional component is under a paddle of the lead frame. 
     
     
       18. The method of  claim 16 , further comprising thermally coupling the additional component to the lead frame.