Film forming apparatus and film forming method

Abstract

A film forming apparatus comprises: a processing chamber in which a substrate is accommodated; a gas supply configured to supply a gas containing a first monomer and a gas containing a second monomer into the processing chamber; a concentration distribution controller configured to control a gas flow within the processing chamber such that a concentration of a mixed gas including the gas containing the first monomer and the gas containing the second monomer on the substrate has a predetermined distribution; and a temperature distribution controller configured to control a temperature distribution of the substrate such that a temperature of a first region of the substrate is higher than a temperature of a second region of the substrate, the concentration of the mixed gas in a region corresponding to the first region being higher than the concentration of the mixed gas in a region corresponding to the second region.

What is claimed is: 
     
       1. A film forming apparatus for forming an organic film of a polymer on a substrate by deposition polymerization, the film forming apparatus comprising:
 a processing chamber in which the substrate is accommodated; 
 a gas supply configured to supply a gas containing a first monomer and a gas containing a second monomer into the processing chamber; and 
 a concentration distribution controller configured to control a gas flow within the processing chamber such that a concentration of a mixed gas including the gas containing the first monomer and the gas containing the second monomer on the substrate has a predetermined distribution, 
 wherein the substrate includes a first region and a second region, and the film forming apparatus is configured such that the concentration of the mixed gas in a region corresponding to the first region is higher than the concentration of the mixed gas in a region corresponding to the second region, 
 wherein the film forming apparatus further comprises a temperature distribution controller configured to control a temperature distribution of the substrate such that a temperature of the first region is higher than a temperature of the second region, 
 wherein the concentration distribution controller includes: 
 a plurality of first supply ports arranged along a peripheral edge of the substrate and configured to supply the gas containing the first monomer and the gas containing the second monomer to outside of a region of the substrate within the processing chamber; and 
 a lifter configured to control a distance between the substrate placed on a stage provided in the processing chamber and a ceiling plate of the processing chamber, and 
 wherein the concentration distribution controller is configured to control a conductance between the ceiling plate and the substrate on the stage with respect to a conductance of a space outside of the region of the substrate by using the lifter to control a flow of the mixed gas within the processing chamber such that the concentration of the mixed gas on the substrate has the predetermined distribution. 
 
     
     
       2. The film forming apparatus of  claim 1 , wherein the temperature distribution controller includes:
 a ceiling plate heater provided on the ceiling plate; and 
 a side wall heater provided on a side wall of the processing chamber, 
 wherein the temperature distribution controller is configured to control a ratio of radiant heat from the side wall heated by the side wall heater to radiant heat from the ceiling plate heated by the ceiling plate heater to control the temperature distribution of the substrate such that the temperature of the first region is higher than the temperature of the second region. 
 
     
     
       3. The film forming apparatus of  claim 2 , wherein the substrate is disk-shaped,
 the ceiling plate heater includes a plurality of partial heaters divided in a radial direction of a circle centered on a central axis of the substrate mounted on the stage, and 
 the temperature distribution controller is configured to independently control a temperature of each of the partial heaters to control the temperature distribution of the substrate such that the temperature of the first region is higher than the temperature of the second region. 
 
     
     
       4. The film forming apparatus of  claim 3 , wherein the ceiling plate includes a second supply port provided on the central axis of the substrate placed on the stage, the second supply port being configured to supply an inert gas towards the substrate. 
     
     
       5. The film forming apparatus of  claim 4 , further comprising:
 an outer peripheral heater provided on an outer peripheral portion of the stage to heat a region outside of a region in which the substrate is placed to a temperature higher than a temperature of the substrate. 
 
     
     
       6. The film forming apparatus of  claim 1 , wherein the substrate is disk-shaped, and
 the ceiling plate includes a second supply port provided on a central axis of the substrate placed on the stage, the second supply port being configured to supply an inert gas towards the substrate. 
 
     
     
       7. The film forming apparatus of  claim 1 , further comprising:
 an outer peripheral heater provided on an outer peripheral portion of the stage to heat a region outside of a region in which the substrate is placed to a temperature higher than a temperature of the substrate.