Method of manufacturing semiconductor device, non-transitory computer-readable recording medium and substrate processing apparatus

Abstract

Described herein is a technique capable of suppressing the generation of particles due to a film peeling in a process chamber. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) loading a substrate with an oxide film formed thereon into a process chamber wherein a metal-containing film is formed on a wall or other location in the process chamber; (b) supplying into the process chamber with at least one among: a gas containing a group 14 element and hydrogen; and a gas containing oxygen; and (c) forming the metal-containing film on the substrate after (b).

What is claimed is: 
     
       1. A method of manufacturing a semiconductor device, comprising:
 (a) loading a substrate with an oxide film formed thereon into a process chamber wherein a metal-containing film is formed on a wall or other location in the process chamber; 
 (b) supplying into the process chamber with at least one among: a gas containing a group  14  element and hydrogen; and a gas containing oxygen; and 
 (c) forming the metal-containing film on the substrate after (b), 
 wherein (c) comprises:
 (d) supplying a metal-containing gas to the substrate; and 
 (e) supplying a reactive gas, 
 wherein (d) and (e) are alternately and repeatedly performed in (c). 
 
 
     
     
       2. The method of  claim 1 , wherein a film containing the group  14  element and hydrogen is formed on a wall of the process chamber in (b) by supplying the gas containing the group  14  element and hydrogen. 
     
     
       3. The method of  claim 1 , wherein the gas containing the group  14  element and hydrogen comprises at least one among SiH 4 , Si 2 H 6  and Si 3 H 8 . 
     
     
       4. The method of  claim 2 , wherein the gas containing the group  14  element and hydrogen comprises at least one among SiH 4 , Si 2 H 6  and Si 3 H 8 . 
     
     
       5. The method of  claim 1 , wherein the gas containing the group  14  element and hydrogen comprises at least one among GeH 4 , Ge 2 H 6  and Ge 3 H 8 . 
     
     
       6. The method of  claim 1 , wherein the metal-containing film formed on the wall of the process chamber is modified into a metal oxide film in (b) by supplying the gas containing oxygen. 
     
     
       7. The method of  claim 1 , wherein an inner pressure of the process chamber is lower in (b) than in (c), and a flow rate of gas supply is smaller in (b) than in (c). 
     
     
       8. The method of  claim 2 , wherein an inner pressure of the process chamber is lower in (b) than in (c), and a flow rate of gas supply is smaller in (b) than in (c). 
     
     
       9. The method of  claim 3 , wherein an inner pressure of the process chamber is lower in (b) than in (c), and a flow rate of gas supply is smaller in (b) than in (c). 
     
     
       10. The method of  claim 1 , wherein an inner temperature of the process chamber is higher in (b) than in (c). 
     
     
       11. The method of  claim 1 , wherein (a) and (c) are performed after (b) is performed. 
     
     
       12. The method of  claim 1 , wherein (b) and (c) are alternately and repeatedly performed. 
     
     
       13. The method of  claim 11 , wherein (b) and (c) are alternately and repeatedly performed. 
     
     
       14. The method of  claim 1 , further comprising
 (f) exhausting an inside of the process chamber such that an inner pressure of the process chamber reaches a predetermined pressure, and heating the process chamber such that a predetermined temperature distribution of an inner temperature of the process chamber is obtained. 
 
     
     
       15. The method of  claim 1 , wherein a titanium nitride film is formed as the metal-containing film in (c). 
     
     
       16. A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform:
 (a) loading a substrate with an oxide film formed thereon into a process chamber wherein a metal-containing film is formed on a wall or other location in the process chamber; 
 (b) supplying into the process chamber with at least one among: a gas containing a group  14  element and hydrogen; and a gas containing oxygen; and 
 (c) forming the metal-containing film on the substrate after (b), 
 wherein (c) comprises:
 (d) supplying a metal-containing gas to the substrate; and 
 (e) supplying a reactive gas, 
 wherein (d) and (e) are alternately and repeatedly performed in (c). 
 
 
     
     
       17. A substrate processing apparatus comprising:
 a process chamber in which a metal-containing film is formed; 
 a transfer system configured to load a substrate into the process chamber; 
 a gas supply system configured to supply into the process chamber with a metal-containing gas or at least one among: a gas containing a group  14  element and hydrogen; and a gas containing oxygen; 
 an exhaust system configured to exhaust an inside of the process chamber; and 
 a controller configured to control the transfer system, the gas supply system and the exhaust system to perform:
 (a) loading the substrate with an oxide film formed thereon into the process chamber; 
 (b) supplying into the process chamber with at least one among: the gas containing the group  14  element; and hydrogen and the gas containing oxygen; and 
 (c) forming the metal-containing film on the substrate after (b), 
 
 wherein (c) comprises:
 (d) supplying the metal-containing gas to the substrate; and 
 (e) supplying a reactive gas, 
 
 
       wherein (d) and (e) are alternately and repeatedly performed in (c).