Method and device for manufacturing stacked substrate

Abstract

A manufacturing method is provided, which includes processing at least one of a plurality of substrates; stacking the plurality of substrates to manufacture a stacked substrate; and correcting, in the processing, a part of an amount of positional misalignment that is generated among a plurality of substrates in the stacking and correcting, in the stacking, at least a part of the remainder of the amount of positional misalignment.

What is claimed is: 
     
       1. A method for manufacturing a stacked substrate comprising:
 processing at least one of a plurality of substrates with a processing unit; 
 stacking at least two of the plurality of substrates with a stacking unit to manufacture the stacked substrate; 
 firstly measuring the stacked substrate; 
 secondly measuring the at least one of the plurality of substrates processed in the processing; 
 controlling the processing unit in accordance with a first correction condition calculated based on a measurement result in the firstly measuring and a measurement result in the secondly measuring, to process another at least one substrate different from the at least one of the plurality of substrates; and 
 controlling the stacking unit in accordance with a second correction condition calculated based on the measurement result in the firstly measuring and the measurement result in the secondly measuring, the second correction condition being different from the first correction condition, to stack another at least two substrates of the plurality of substrates different from the at least two of the plurality of substrates, wherein the another at least two substrates includes the another at least one substrate. 
 
     
     
       2. The method according to  claim 1 , wherein
 the stacking of the another at least two substrates includes correcting at least a part of a positional misalignment among the plurality of substrates, and 
 a correction amount of the stacking of the another at least two substrates is decided based on the measurement result in the firstly measuring and the measurement result in the secondly measuring. 
 
     
     
       3. The method according to  claim 2 , wherein the correction amount of the stacking is decided in each of a plurality of measurement results in the firstly measuring and the secondly measuring. 
     
     
       4. The method according to  claim 1 , wherein the secondly measuring includes measuring a distortion of the at least one of the plurality of substrates. 
     
     
       5. The manufacturing method according to  claim 1 , further comprising measuring the stacked substrate, wherein
 the processing for at least one of a plurality of substrates to be stacked after the measuring is controlled based on the measurement result in the measuring the stacked substrate. 
 
     
     
       6. The manufacturing method according to  claim 5 , wherein
 a correction amount for a substrate processed in the processing after the plurality of the substrates is decided based on the measurement result in the measuring the stacked substrate. 
 
     
     
       7. The manufacturing method according to  claim 6 , wherein
 a second correction amount of the stacking is decided based on a second measuring result of the substrate processed with the correction amount. 
 
     
     
       8. The method according to  claim 1 , further comprising deciding a correction amount to be performed in the processing of the another at least one substrate based on an amount of positional misalignment among a different plurality of substrates of each of a plurality of stacked substrates manufactured before manufacturing the stacked substrate. 
     
     
       9. The method according to  claim 8 , wherein in the deciding, one of an average value and a minimum value of the amounts of positional misalignment in the plurality of stacked substrates is decided as the correction amount. 
     
     
       10. The method according to  claim 8 , wherein in the deciding, a 3σ (σ: standard deviation) of each of positional misalignment components of the amount of positional misalignment in each stacked substrate of the plurality of stacked substrates is calculated, and a correction amount for correcting a positional misalignment component of which a value of the 3σ is smaller than a preset threshold value is decided as the correction amount. 
     
     
       11. The method according to  claim 1 , wherein in the processing of the another at least one substrate, the correction is performed in forming a circuit on the another at least one substrate. 
     
     
       12. The method according to  claim 1 , wherein in the processing of the another at least one substrate, the correction is performed in depositing a film on the another at least one substrate. 
     
     
       13. The method according to  claim 1 , wherein in the stacking of the another at least two substrates, the correction is performed by deforming the another at least one substrate. 
     
     
       14. The method according to  claim 8 , wherein the positional misalignment in the deciding includes positional misalignment that is generated in the stacked substrate during a thinning in which the stacked substrate is thinned after the stacking. 
     
     
       15. The method according to  claim 1 , wherein the first correction condition is used for correcting, during the processing of the another at least one substrate, at least a part of a positional misalignment generated among the stacked plurality of substrates during the stacking of the plurality of substrates, and the second correction condition is used for correcting, during the stacking of the another at least two substrates, a part of a remainder of the positional misalignment. 
     
     
       16. The method according to  claim 1 , wherein the first correction condition in the processing of the another at least one substrate and the second correction condition in the stacking of the another at least two substrates include a correction amount,
 wherein the correction amount in the processing is common for the another at least one substrate processed in the processing, and 
 wherein the correction amount in the stacking corresponds to a difference between an amount of positional misalignment that is generated among the stacked plurality of substrates measured by the firstly measuring and the correction amount in the processing commonly decided. 
 
     
     
       17. The method according to  claim 1 , wherein the first correction condition is commonly used for the another at least one substrate processed in the processing. 
     
     
       18. The method according to  claim 1 , wherein the first correction condition is decided based on a plurality of measurement results that are obtained by measuring a plurality of stacked substrates during the firstly measuring. 
     
     
       19. The method according to  claim 1 , wherein the secondly measuring includes measuring a distortion of the at least one of the plurality of substrates processed in the processing. 
     
     
       20. The method according to  claim 1 , wherein at least a part of a positional misalignment that is generated among the plurality of substrates is corrected during the stacking of the another at least one substrate, and the second correction condition is decided based on the measurement result in the secondly measuring. 
     
     
       21. The method according to  claim 20 , wherein the second correction condition is decided for each measurement result in the secondly measuring. 
     
     
       22. The method according to  claim 16 , wherein the correction amount in the processing of the another at least one substrate is decided such that a remaining correction amount after the correction during the processing is a range to be correctable in the stacking. 
     
     
       23. The method according to  claim 22 , wherein the correction amount in the stacking of the another at least one substrate is obtained by excluding information regarding the measurement result in the secondly measuring from information regarding the measurement result in the firstly measuring. 
     
     
       24. The method according to  claim 23 , wherein the firstly measuring includes measuring the positional misalignment that is generated among the stacked plurality of substrates,
 the secondly measuring includes measuring a distortion of at least one of the plurality of substrates, 
 the correction amount in the stacking of the another at least one substrate is decided based on the measurement result in the secondly measuring, and 
 a distortion component of substrate that is generated in the stacking of the another at least two substrates is calculated by excluding information regarding the distortion of at least one of the plurality of substrates measured by the secondly measuring from the positional misalignment that is generated among the stacked plurality of substrates measured by the firstly measuring. 
 
     
     
       25. The method according to  claim 1 , wherein the processing of the at least one of a plurality of substrates includes processing a structure including a mark to at least one of the plurality of substrates;
 the stacking of the at least two of the plurality of substrates includes detecting the mark provided in the substrate, the plurality of substrates being stacked based on a detection result of the mark, and 
 the secondly measuring includes measuring the substrate before entering the stacking to obtain a displacement from a design position of the structure in the substrate.