Remover for a ruthenium containing metal and use thereof

Abstract

This invention provides a remover comprising (a) a cerium (IV) nitrate salt and (b) at least one acid selected from the group consisting of nitric acid, perchloric acid and acetic acid.

What is claimed is:  
     
         1 . A remover for a ruthenium containing metal, comprising (a) a cerium (IV) nitrate salt and (b) at least one acid selected from the group consisting of nitric acid, perchloric acid and acetic acid.  
     
     
         2 . The remover as claimed in    claim 1    used for removing a ruthenium containing metal adhering to a semiconductor substrate.  
     
     
         3 . The remover as claimed in    claim 1    used for washing a semiconductor device in which a ruthenium containing metal adheres to an area other than a device forming area.  
     
     
         4 . The remover as claimed in    claim 2    wherein the semiconductor substrate is a silicon substrate.  
     
     
         5 . The remover as claimed in    claim 3    wherein the semiconductor substrate is a silicon substrate.  
     
     
         6 . The remover as claimed in    claim 1    comprising 5 to 35 % by mass of component (a) and 1 to 30 % by mass of component (b).  
     
     
         7 . The remover as claimed in    claim 2    comprising 5 to 35 % by mass of component (a) and 1 to 30 % by mass of component (b).  
     
     
         8 . The remover as claimed in    claim 3    comprising 5 to 35 % by mass of component (a) and 1 to 30 % by mass of component (b).  
     
     
         9 . A method of removing a ruthenium containing metal adhering to a semiconductor substrate with a remover, the remover comprising: 
 (a) a cerium (IV) nitrate salt and    (b) at least one acid selected from the group consisting of nitric acid, perchloric acid and acetic acid.    
     
     
         10 . A method of removing a ruthenium containing metal adhering to an area other than a device forming area on a semiconductor substrate with a remover, the remover comprising: 
 (a) a cerium (IV) nitrate salt and    (b) at least one acid selected from the group consisting of nitric acid, perchloric acid and acetic acid.    
     
     
         11 . A method of using a remover for a ruthenium containing metal wherein after removing with the remover as claimed in    claim 1   , a substrate is washed with a liquid containing at least one of hydrofluoric acid, nitric acid, perchloric acid and oxalic acid for removing the remover residue.  
     
     
         12 . A method of using a remover for a ruthenium containing metal wherein after removing with the remover as claimed in    claim 2   , a substrate is washed with a liquid containing at least one of hydrofluoric acid, nitric acid, perchloric acid and oxalic acid for removing the remover residue.  
     
     
         13 . A method of using a remover for a ruthenium containing metal wherein after removing with the remover as claimed in    claim 3   , a substrate is washed with a liquid containing at least one of hydrofluoric acid, nitric acid, perchloric acid and oxalic acid for removing the remover residue.  
     
     
         14 . A process for removing a ruthenium containing metal comprising the steps of depositing a ruthenium film in a device forming area on a semiconductor substrate; and spraying a remover containing (a) a cerium (IV) nitrate salt and (b) at least one acid selected from the group consisting of nitric acid, perchloric acid and acetic acid on a given area on the semiconductor substrate while rotating the substantially horizontal semiconductor substrate to remove a ruthenium containing metal adhering to an area other than the device forming area.