Polishing agent and polishing method

Abstract

In order to polish an insulating film, a cerium oxide polishing agent (ceria slurry) is used. The ceria slurry is composed of cerium oxide powder containing Na, Ca, Fe, and Cr concentration of which is less than 10 ppm. Fragile inorganic and organic insulating films formed at relatively low temperatures can be polished without degrading the characteristics of the semiconductor element due to Na diffusion.

What is claimed is:  
     
         1 . A method for manufacturing a semiconductor device, comprising the steps of: 
 providing a body which has an insulation on a surface thereof; and    polishing said insulation using slurry, 
 wherein said slurry includes cerium oxide particles whose crystallite size is not less than 60 nm, and impurity in said slurry is not more than 10 ppm.  
   
     
     
         2 . A method for manufacturing a semiconductor device according to  claim 1 , wherein said insulation is an inorganic insulation.  
     
     
         3 . A method for manufacturing a semiconductor device according to  claim 1 , wherein said impurity includes at least one selected from the group consisting of Na, Ca, Fe, and Cr.  
     
     
         4 . A method for manufacturing a semiconductor device according to  claim 1 , wherein an average particle size of said cerium oxide particles is not more than 1 μm.  
     
     
         5 . A method for manufacturing a semiconductor device according to  claim 1 , wherein a pH of said slurry is at least 3.  
     
     
         6 . A method for manufacturing a semiconductor device according to  claim 1 , wherein a polishing load in said polishing step is within a range of 0.1 to 0.5 Kg/cm 2 .  
     
     
         7 . A method for manufacturing a semiconductor device according to  claim 1 , wherein said body has a transistor region.  
     
     
         8 . A method for manufacturing a semiconductor device, comprising the steps of: 
 providing a body which has insulation on a surface thereof; and    polishing said insulation using a slurry, 
 wherein said slurry includes cerium oxide particles whose half value of diffraction peak for crystal orientation is not more than 0.3, and impurity in said slurry is not more than 10 ppm.  
   
     
     
         9 . A method for manufacturing a semiconductor device according to  claim 8 , wherein said insulation is an inorganic insulation.  
     
     
         10 . a method for manufacturing a semiconductor device according to  claim 8 , wherein said impurity includes at least one selected from the group consisting of Na, Ca, Fe, and Cr.  
     
     
         11 . A method for manufacturing a semiconductor device according to  claim 8 , wherein an average particle size of said cerium oxide particles is not more than 1 μm.  
     
     
         12 . A method for manufacturing a semiconductor device according to  claim 8 , wherein a pH of said slurry is at least 3.  
     
     
         13 . A method for manufacturing a semiconductor device according to  claim 8 , wherein a polishing load in said polishing step is within a range of 0.1 to 0.5 Kg/cm 2 .  
     
     
         14 . A method for manufacturing a semiconductor device according to  claim 8 , wherein said body has a transistor region.