In-situ monitor seed for copper plating

Abstract

A method and apparatus for monitoring copper seed layer growth during copper plating of a semiconductor wafer. A ring contact for use in copper plating of the semiconductor wafer is generally divided into a plurality of switches thereof. The ring contact is biased to prior to copper plating of the semiconductor wafer to determine a copper seed layer conductivity. Each switch among the plurality of switches can be connected together and thereafter the switches may be biased to an anode during copper plating, thereby permitting in-situ monitoring of copper seed resistance prior to the copper plating and a detection of copper seed damage and copper seed corrosion associated with the copper plating.

1 . A method for monitoring seed layer growth during plating of a semiconductor wafer, said method comprising the steps of: 
 dividing a ring contact for use in plating of said semiconductor wafer, wherein said ring contact is divided to include a plurality of switches thereof; and    biasing said ring contact prior to plating of said semiconductor wafer to determine a seed layer conductivity, thereby permitting in-situ monitoring of seed resistance prior to plating of said semiconductor wafer.    
     
     
         2 . The method of  claim 1  further comprising the step of: 
 connecting each switch among said plurality of switches together.  
 
     
     
         3 . The method of  claim 1  further comprising the step of: 
 biasing said plurality of switches to an anode during plating.  
 
     
     
         4 . The method of  claim 1  further comprising the steps of: 
 connecting each switch among said plurality of switches together; and  
 biasing said plurality of switches to an anode during plating.  
 
     
     
         5 . The method of  claim 1  further comprising the step of: 
 detecting seed damage associated with said plating of said semiconductor wafer.  
 
     
     
         6 . The method of  claim 1  further comprising the step of: 
 detecting seed corrosion associated with said plating of said semiconductor wafer.  
 
     
     
         7 . The method of  claim 1  further comprising the step of: 
 plating said semiconductor wafer.  
 
     
     
         8 . The method of  claim 7  wherein the step of plating said semiconductor wafer further comprises the step of: 
 plating said semiconductor wafer with copper.  
 
     
     
         9 . The method of  claim 8  wherein said seed layer comprises a copper seed layer.  
     
     
         10 . A method for monitoring copper seed layer growth during copper plating of a semiconductor wafer, said method comprising the steps of: 
 dividing a ring contact for use in copper plating of said semiconductor wafer, wherein said ring contact is divided to include a plurality of switches thereof; and    biasing said ring contact prior to copper plating of said semiconductor wafer to determine a copper seed layer conductivity;    connecting each switch among said plurality of switches together; and    thereafter biasing said plurality of switches to an anode during copper plating, thereby permitting in-situ monitoring of copper seed resistance prior to said copper plating and a detection of copper seed damage and copper seed corrosion associated with said copper plating.    
     
     
         11 . An apparatus for monitoring seed layer growth during plating of a semiconductor wafer, said apparatus comprising: 
 a ring contact for use in plating of said semiconductor wafer, wherein said ring contact is divided to include a plurality of switches thereof; and    biasing mechanism for biasing said ring contact prior to plating of said semiconductor wafer to determine a seed layer conductivity, thereby permitting in-situ monitoring of seed resistance prior to plating of said semiconductor wafer.    
     
     
         12 . The apparatus of  claim 11  wherein each switch among said plurality of switches are connected together.  
     
     
         13 . The apparatus of  claim 11  wherein said biasing mechanism further comprises: 
 biasing mechanism for biasing said plurality of switches to an anode during plating.  
 
     
     
         14 . The apparatus of  claim 11  further comprising: 
 connecting each switch among said plurality of switches together; and  
 wherein said biasing mechanism biases said plurality of switches to an anode during plating.  
 
     
     
         15 . The apparatus of  claim 11  further comprising: 
 detecting mechanism for detecting seed damage associated with said plating of said semiconductor wafer.  
 
     
     
         16 . The apparatus of  claim 11  further comprising: 
 detecting mechanism for detecting seed corrosion associated with said plating of said semiconductor wafer.  
 
     
     
         17 . The apparatus of  claim 11  further comprising: 
 plating mechanism for plating said semiconductor wafer.  
 
     
     
         18 . The apparatus of  claim 17  wherein said plating mechanism further comprises: 
 plating mechanism for plating copper.  
 
     
     
         19 . The apparatus of  claim 18  wherein said seed layer comprises a copper seed layer.  
     
     
         20 . An apparatus for monitoring copper seed layer growth during copper plating of a semiconductor wafer, said apparatus comprising: 
 a ring contact for use in copper plating of said semiconductor wafer, wherein said ring contact is divided to include a plurality of switches thereof;    biasing mechanism for biasing said ring contact prior to copper plating of said semiconductor wafer to determine a copper seed layer conductivity;    wherein each switch among said plurality of switches are connecting together; and    wherein said plurality of switches are biased to an anode during copper plating, thereby permitting in-situ monitoring of copper seed resistance prior to said copper plating and a detection of copper seed damage and copper seed corrosion associated with said copper plating.