Polishing apparatus and method for producing semiconductors using the apparatus

Abstract

The present invention relates to a polishing apparatus, and a semiconductor manufacturing method using the apparatus. Dressing of a grindstone surface is ground by sizing processing whereby dressing of a tool surface can be done while preventing occurrence of cracks on the grindstone surface which is the cause for occurrence of scratches. Further, flatness of the surface of a dressing tool can be guaranteed because of sizing cutting-in; even if a thick grindstone of a few centimeters is used, the flatness can be maintained to the end; and processing with less in-face unevenness can be always carried out. Therefore, the life of the dressing tool can be greatly extended. Further, the present sizing-dressing is carried out jointly with processing of a wafer to thereby enable improvement of throughput of the apparatus as well as maintenance of a processing rate. The present apparatus and method are effective for planarization of various substrate surfaces having irregularities.

What is claimed is:  
     
         1 . A method for manufacturing a semiconductor for effecting polishing-processing while pressing the thin film surface adhered to the surface of a semiconductor substrate formed with an irregularity pattern to the polishing surface of a polishing tool for relative motion, comprising the steps of: 
 forming a surface roughness with a dressing tool on the polishing surface of said polishing tool, during a period between said polishing-processing or during the polishing-processor while controlling movement of said dressing tool in a vertical direction with respect to said polishing surface.    
     
     
         2 . A method for manufacturing a semiconductor according to  claim 1 , wherein said forming step is performed each semiconductor substrate.  
     
     
         3 . A method for manufacturing a semiconductor according to  claim 1 , wherein said movement of said dressing tool in a vertical direction is limited in substantially 1 μm.  
     
     
         4 . A method for manufacturing a semiconductor according to  claim 1 , wherein said movement of said dressing tool in a vertical direction is limited between 0.5 and 2 μm.  
     
     
         5 . A method for manufacturing a semiconductor for effecting polishing-processing while pressing the thin film surface adhered to the surface of a semiconductor substrate formed with an irregularity pattern to the polishing surface of a polishing tool for relative motion comprising a step of: 
 forming a surface roughness with a dressing tool on the polishing surface of aid polishing tool before said polishing-processing while controlling movement of said dressing tool in a vertical direction with respect to said polishing surface.    
     
     
         6 . A method for manufacturing a semiconductor for effecting polishing-processing while pressing the thin film surface adhered to the surface of a semiconductor substrate formed with an irregularity pattern to the polishing surface of a polishing tool for relative motion comprising a step of: 
 forming a surface roughness with a dressing tool on the polishing surface of said polishing tool simultaneously said polishing-processing while controlling movement of said dressing tool in a vertical direction with respect to said polishing surface.