Substrate processing apparatus
Abstract
A substrate processing apparatus includes: a reaction tube; a gas introducing tube which is in communication with said reaction tube; a gas exhausting tube having a closing member, and a controller which controls an opening of the closing member to substantially stop exhaustion through the exhausting tube from a predetermined point of time before cleaning gas is supplied from said gas introducing tube into the reaction tube to a point of time when several seconds are elapsed after starting of supply of the cleaning gas into the reaction tube such that there exists a state in which exhaustion from the gas exhausting tube is stopped while the cleaning gas is supplied from the gas introducing tube into the reaction tube to fill the reaction tube with the cleaning gas under control of the controller.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A substrate processing apparatus, comprising:
a reaction tube; a gas introducing tube which is in communication with said reaction tube; a gas exhausting tube having a closing member, and a controller which controls an opening of said closing member to substantially stop exhaustion through said exhausting tube from a predetermined point of time before cleaning gas is supplied from said gas introducing tube into said reaction tube to a point of time when several seconds are elapsed after starting of supply of the cleaning gas into said reaction tube such that there exists a state in which exhaustion from said gas exhausting tube is stopped while the cleaning gas is supplied from said gas introducing tube into said reaction tube to fill said reaction tube with the cleaning gas under control of said controller.
2 . A substrate processing apparatus as recited in claim 1 , wherein
said controller controls said opening of said closing member to substantially stop exhaustion through said exhausting tube from said predetermined point of time before the cleaning gas is supplied from said gas introducing tube into said reaction tube to a point of time when seven seconds are elapsed after the starting of the supply of the cleaning gas into said reaction tube.
3 . A substrate processing apparatus as recited in claim 1 , wherein
the exhaustion from said gas exhausting tube is substantially stopped simultaneously with or before the starting of the supply of the cleaning gas from said gas introducing tube.
4 . A substrate processing apparatus as recited in claim 1 , wherein
the exhaustion from said gas exhausting tube is substantially stopped within seven seconds after the starting of the supply of the cleaning gas.
5 . A substrate processing apparatus as recited in claim 1 , wherein
a first stage which fills said reaction tube with the cleaning gas under the control of said controller and a second stage which thereafter exhausts gas from said reaction tube are repeated at least once.
6 . A substrate processing apparatus, comprising:
a reaction tube; a gas introducing tube which is in communication with said reaction tube; a gas exhausting tube having a closing member, and a controller which controls an opening of said closing member to substantially stop exhaustion through said exhausting tube from a predetermined point of time before cleaning gas is supplied from said gas introducing tube into said reaction tube to a predetermined point of time after the cleaning gas is started to be supplied into said reaction tube such that there exists a state in which exhaustion from said gas exhausting tube is stopped while the cleaning gas is supplied from said gas introducing tube into said reaction tube to repeat a first stage which fills said reaction tube with the cleaning gas under control of said controller and a second stage which thereafter exhausts gas from said reaction tube at least once.
7 . A substrate processing apparatus as recited in claim 1 , wherein
the supply of the cleaning gas from said gas introducing tube is effected by supplying, after the cleaning gas is supplied into the reaction tube with a first flow rate, the cleaning gas into the reaction tube with a second flow rate which is smaller than the first flow rate.
8 . A substrate processing apparatus as recited in claim 7 , wherein
a first time period during which the cleaning gas is supplied into the reaction tube with the first flow rate is shorter than a second time period during which the cleaning gas is supplied into the reaction tube with the second flow rate.
9 . A substrate processing apparatus as recited in claim 7 , wherein
a degree of pressure rise in the reaction tube for a time period during which the cleaning gas is supplied into the reaction tube with the first flow rate is higher than a degree of pressure rise in the reaction tube for a time period during which the cleaning gas is supplied into the reaction tube with the second flow rate.
10 . A substrate processing apparatus as recited in claim 1 , wherein
after the cleaning gas is supplied into the reaction tube and a pressure in the reaction tube reaches a predetermined value, the supply of the cleaning gas is stopped for a predetermined time.
11 . A substrate processing apparatus, comprising:
a reaction tube; a gas introducing tube which is in communication with said reaction tube; a cleaning gas supply member which supplies cleaning gas to said gas introducing tube, and a controller which controls an opening of said closing member to substantially stop exhaustion through said exhausting tube from a predetermined point of time before cleaning gas is supplied from said gas introducing tube into said reaction tube to a point of time when several seconds are elapsed after starting of supply of the cleaning gas into said reaction tube such that there exists a state in which exhaustion from said gas exhausting tube is stopped while the cleaning gas is supplied by said cleaning gas supply member through said gas introducing tube into said reaction tube.Cited by (0)
No later patents cite this yet.
References (0)
No backward citations on record.