Process and apparatus for forming oxide film, and electronic device material

Abstract

An oxide film-forming apparatus, comprising: a process chamber for disposing an electronic device substrate at a predetermined position; water vapor supply means for supplying water vapor into the process chamber; and plasma exciting means for activating the water vapor with plasma, whereby the surface of the electronic device substrate can be irradiated with the plasma based on the water vapor.

1 . An oxide film-forming apparatus, comprising: 
 a process chamber for disposing an electronic device substrate at a predetermined position;    water vapor supply means for supplying water vapor into the process chamber; and    plasma exciting means for activating the water vapor with plasma,    whereby the surface of the electronic device substrate can be irradiated with the plasma based on the water vapor.    
     
     
         2 . An electronic device material, comprising: 
 an electronic device substrate having at least one trench, and    an oxide film covering a part of the surface of the electronic device substrate; the part containing at least one trench groove,    wherein, in the oxide film covering the trench groove, the ratio (T 100 /T 110 ) of the thickness T 100  of the oxide film disposed on the surface (100) of the electronic device material, to the thickness T 110  of the oxide film disposed on the surface (110) of the electronic device material is 0.65 or larger.    
     
     
         3 . An oxide film-forming process, comprising: 
 irradiating the surface of an electronic device substrate with plasma in the presence of a process gas containing at least water vapor, so as to form an oxide film on the surface of the electronic device substrate.    
     
     
         4 . An oxide film-forming process according to  claim 3 , wherein the oxide film is formed at a temperature of 500° C. or lower.  
     
     
         5 . An oxide film-forming process according to  claim 3  or  4 , wherein the plasma is generated on the basis of microwave irradiation through a plane antenna member having a plurality of slits.