Film forming method and film forming apparatus

Abstract

The present invention comprises the steps of performing a reforming process on a surface of a low dielectric constant insulation film formed on a substrate which includes one of a porous low dielectric constant insulation film and a non-porous low dielectric constant insulation film and forming an insulation film as at least one of an etching mask and a Chemical Mechanical Polishing stopper (CMP stopper) on the reformed surface of the low dielectric constant insulation film. For example, plasma is radiated as a reforming process mentioned above, the surface roughness of a low dielectric insulation film is increased and, as a result, adhesion between the films and also between the inter-layer insulation film and other neighboring films can be improved with so-called “anchor effect”.

1 - 14 . (Canceled)  
   
   
       15 . A film forming apparatus, comprising: 
 a coating portion coating an insulation film on a substrate;    a reforming process portion reforming a surface of a coated insulation film; and    a transferring portion transferring the substrate between the coating portion and the reforming process portion.    
   
   
       16 . The film forming apparatus as set forth in  claim 15 , wherein the reforming process of the insulation film is performed with a plasma at the reforming process portion.  
   
   
       17 . The film forming apparatus as set forth in  claim 16 , wherein the reforming process portion is a parallel plate type plasma generating apparatus.  
   
   
       18 . The film forming apparatus as set forth in  claim 16 , wherein the reforming process portion has an Inductively Coupled Plasma radiating portion radiating an Inductively Coupled Plasma on the substrate.  
   
   
       19 . The film forming apparatus as set forth in  claim 15 , wherein the reforming process portion has an ultrasonic vibration providing portion providing an ultrasonic vibration on the substrate.  
   
   
       20 . The film forming apparatus as set forth in  claim 15 , wherein the reforming process portion has: 
 a plasma radiating portion radiating a plasma on the surface of the insulation film; and    an ultraviolet ray radiating portion radiating an ultraviolet ray on the surface of the insulation film;    wherein the plasma radiating portion and the ultraviolet ray radiating portion are integrated together structurally.    
   
   
       21 . A film forming apparatus, comprising: 
 a plasma radiating portion radiating a plasma on a surface of an insulation film; and    an ultraviolet ray radiating portion radiating an ultraviolet ray on the surface of the insulation film;    wherein the plasma radiating portion and the ultra violet radiating portion are integrated together structurally.    
   
   
       22 . A film forming apparatus, comprising: 
 a rotating portion rotating a substrate while holding a supply portion supplying an insulation film forming material on the substrate while rotating the substrate with the rotating portion; and    a radiating portion radiating a plasma on the substrate while rotating the substrate with the rotating portion.