Cleaning solution and method of cleaning a semiconductor device using the same

Abstract

In a cleaning solution and a method of cleaning a semiconductor substrate, the cleaning solution includes about 1 to about 10 percent by weight of sulfuric acid, about 0.5 to about 5 percent by weight of aqueous hydrogen peroxide solution, and about 85 to about 98.5 percent by weight of hydrogen fluoric acid solution. Various polymers attached to a metal wiring formed on a substrate are removed by immersing the substrate into the cleaning solution. The substrate is rinsed to remove the cleaning solution remaining on the substrate. Thus, the polymers can be completely removed without damage to the metal wiring and an underlying oxide film.

1 . A cleaning solution for removing a polymer comprising: 
 about 1 to about 10 percent by weight of sulfuric acid;    about 0.5 to about 5 percent by weight of aqueous hydrogen peroxide solution; and    about 85 to about 98.5 percent by weight of hydrogen fluoric acid solution.    
     
     
         2 . The cleaning solution of  claim 1 , wherein the hydrogen fluoric acid solution includes about 1,000 ml of deionized water and about 0.1 to about 2 ml of hydrogen fluoric acid, wherein the hydrogen fluoric acid has a concentration of about 45 to about 55 percent.