US2005150757A1PendingUtilityA1
Heated and cooled vacuum chamber shield
Assignee: APPLIED KOMATSU TECHNOLOGY INCPriority: Mar 17, 1997Filed: Jan 4, 2005Published: Jul 14, 2005
Est. expiryMar 17, 2017(expired)· nominal 20-yr term from priority
H10P 72/0434C23C 14/564C23C 14/50C23C 14/34C23C 14/54
47
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Claims
Abstract
The invention is directed to method for processing substrates and chamber for the same. In one embodiment, a method for processing substrates includes transferring a substrate to a substrate support disposed in a processing chamber, controlling a temperature of a liner lining a sidewall of the processing chamber, and processing the substrate in the processing chamber.
Claims
exact text as granted — not AI-modified1 . A method for processing substrates, comprising:
positioning a substrate in a processing chamber; processing the substrate in the processing chamber; and controlling a temperature of a liner lining a sidewall of the processing chamber.
2 . The method of claim 1 , wherein the step of controlling the temperature of the liner further comprises:
heating the liner.
3 . The method of claim 1 , wherein the step of controlling the temperature of the liner further comprises:
maintaining the temperature of the liner to minimize stress in a material deposited on the substrate.
4 . The method of claim 1 further comprising:
heating the liner after the substrate has been processed in the chamber; and removing the processed substrate from the processing chamber; transferring a second substrate into the processing chamber; and cooling the liner during processing of the second substrate.
5 . The method of claim 1 , wherein the step of controlling the temperature of the liner further comprises:
applying power to a resistive heater disposed in a passage formed in the liner.
6 . The method of claim 5 , wherein the step of controlling the temperature of the liner further comprises:
flowing a gas through the passage formed in the liner.
7 . The method of claim 1 , wherein the step of controlling the temperature of the liner further comprises:
flowing gas through the passage formed in the liner.
8 . The method of claim 7 , wherein the step of flowing the gas through the passage formed in the liner further comprises:
flowing at least one of air, nitrogen or argon through the passage.
9 . The method of claim 1 further comprising:
electrically biasing the liner relative to the sidewall.
10 . The method of claim 1 , wherein the step of controlling the temperature of the liner occurs during at least a portion of the processing step.
11 . The method of claim 1 , wherein the step of controlling the temperature of the liner occurs during at least a portion of a bake-out procedure performed prior to the processing step.
12 . The method of claim 1 , wherein the step of processing the substrate in the processing chamber further comprises:
depositing a layer of material on the substrate, wherein the material is at least one of aluminum, tantalum, indium tin oxide or polysilicon.
13 . A method for processing substrates, comprising:
positioning a substrate in a processing chamber having a shield lining a least a portion of an internal volume of the processing chamber; regulating a temperature of a passage formed in the shield; and processing a substrate disposed in the processing chamber.
14 . The method of claim 13 , wherein the step of regulating the temperature further comprises:
applying power to a resistive heater disposed in the passage formed in the shield.
15 . The method of claim 13 , wherein the step of regulating the temperature further comprises:
flowing a gas through the passage formed in the shield.
16 . The method of claim 13 , wherein the step of regulating the temperature further comprises:
controlling a characteristic of a material deposited on the shield.
17 . The method of claim 15 , wherein the step of regulating the temperature further comprises:
heating the shield during processing of the substrate.
18 . The method of claim 13 , wherein the step of regulating the temperature further comprises:
cooling the shield during processing of the substrate.
19 . The method of claim 13 further comprising:
replacing the shield after a number of substrate processing cycles.
20 . The method of claim 19 further comprising:
heating an internal passage within a replacement shield prior to resuming substrate processing.
21 . A processing chamber comprising;
a chamber body having an internal wall defining an internal volume; a substrate support disposed in the internal volume; a removable liner disposed in the internal volume adjacent to the wall and circumscribing the liner; and a temperature control passage formed the liner.
22 . The processing chamber of claim 21 further comprising:
a resistive heater disposed in the temperature control passage.
23 . The processing chamber of claim 22 further comprising:
a controller containing instructions, that when executed by the controller, cause a temperature of the passage formed through the liner to be controlled in a manner that regulates a temperature of a side of the liner facing the substrate support.
24 . The processing chamber of claim 23 , wherein the instructions, when executed by the controller, further cause the temperature of the side of the liner facing the substrate support to be maintained at a temperature that minimizes flaking of material deposited on the liner.
25 . A processing chamber comprising;
a chamber body having an internal wall defining an internal volume; a substrate support disposed in the internal volume; a removable liner disposed in the internal volume adjacent to the wall and circumscribing the liner; a temperature control passage formed the liner; and a temperature control medium circulating through the liner.Join the waitlist — get patent alerts
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