Plasma processing system, plasma processing method, plasma film deposition system, and plasma film deposition method

Abstract

A plasma film deposition apparatus (plasma processing apparatus) is disclosed, which includes a second antenna 11 b disposed around an antenna 11 a and located outwardly of a ceiling surface, and which supplies the second antenna 11 b with an electric current flowing in a direction opposite to the direction of an electric current supplied to the antenna 11 a by power supply means, whereby lines of magnetic force, F 2 , heading in a direction opposite to the direction of lines of magnetic force, F 1 , appearing at the site of the antenna 11 a are generated at the site of the second antenna 11 b . Thus, the magnetic flux density in the direction of the wall surface is lowered, even when a uniform plasma is generated in a wide range within a tubular container 2.

1 - 16 . (canceled)  
     
     
         17 . A plasma processing apparatus in which a flat ring-shaped antenna is disposed at a top of a ceiling surface of a processing chamber, power is supplied by power supply means to generate a plasma within the processing chamber, and processing is applied to a surface of a substrate by atoms and molecules excited and activated there, comprising 
 a second antenna located outwardly of the ceiling surface and disposed around the antenna, and    second power supply means for supplying the second antenna with an electric current flowing in a direction opposite to a direction of an electric current supplied to the antenna.    
     
     
         18 . The plasma processing apparatus according to  claim 17 , wherein 
 the power supply means and the second power supply means are an identical alternating current power source.    
     
     
         19 . The plasma processing apparatus according to  claim 17 , wherein 
 connection between an alternating current power source as the power supply means and the antenna, and connection between an alternating current power source as the second power supply means and the second antenna are in an identical direction, and    phase changing means is provided for rendering a phase of the alternating current power source as the power supply means and a phase of the alternating current power source as the second power supply means opposite to each other.    
     
     
         20 . The plasma processing apparatus according to  claim 17 , wherein 
 connection between an alternating current power source as the power supply means and the antenna, and connection between an alternating current power source as the second power supply means and the second antenna are in opposite directions.    
     
     
         21 . The plasma processing apparatus according to  claim 17 , wherein 
 the processing of the surface of the substrate is film deposition for producing a film on the surface of the substrate by the excited and activated atoms and molecules.    
     
     
         22 . A plasma processing method which supplies power from above a top of a ceiling surface of a processing chamber to generate a plasma within the processing chamber, and applies processing to a surface of a substrate by atoms and molecules excited and activated there, comprising 
 generating an electric current, which flows in a direction opposite to a direction of an electric current supplied for generation of the plasma, outwardly of the ceiling surface to apply the processing.    
     
     
         23 . A plasma film deposition apparatus including 
 a tubular container accommodating a substrate,    source gas supply means for supplying a source gas into the tubular container,    a flat ring-shaped antenna, disposed at a top of a ceiling surface of the tubular container, for converting an interior of the tubular container into a plasma by power supply, and    power supply means for supplying power to the antenna to generate a plasma of the source gas within the tubular container, and    adapted to produce a film on a surface of the substrate by atoms and molecules excited and activated by the plasma within the tubular container,    further comprising:    a second antenna disposed around the antenna and located outwardly of the ceiling surface, and    second power supply means for supplying the second antenna with an electric current flowing in a direction opposite to a direction of an electric current supplied to the antenna by the power supply means.    
     
     
         24 . The plasma film deposition apparatus according to  claim 23 , wherein 
 the power supply means and the second power supply means are an identical alternating current power source.    
     
     
         25 . The plasma film deposition apparatus according to  claim 23 , wherein 
 connection between an alternating current power source as the power supply means and the antenna, and connection between an alternating current power source as the second power supply means and the second antenna are in an identical direction, and    phase changing means is provided for rendering a phase of the alternating current power source as the power supply means and a phase of the alternating current power source as the second power supply means opposite to each other.    
     
     
         26 . The plasma film deposition apparatus according to  claim 23 , wherein 
 connection between an alternating current power source as the power supply means and the antenna, and connection between an alternating current power source as the second power supply means and the second antenna are in opposite directions.    
     
     
         27 . A plasma film deposition method which supplies power from above a top of a ceiling surface of a tubular container to generate a plasma within the tubular container, and produces a film on a surface of a substrate by atoms and molecules excited and activated there, comprising 
 generating an electric current, which flows in a direction opposite to a direction of an electric current supplied for generation of the plasma, outwardly of the ceiling surface to produce the film.    
     
     
         28 . A plasma processing apparatus in which a ring-shaped antenna is disposed at a top of a ceiling surface of a processing chamber, power is supplied at a frequency of 10 MHz to 30 MHz to the antenna by power supply means to generate a plasma within the processing chamber, and processing is applied to a surface of a substrate by atoms and molecules excited and activated there, wherein 
 the substrate is located in a region where the plasma has a high density, but has a low electron temperature.    
     
     
         29 . The plasma processing apparatus according to  claim 28 , wherein 
 the region where the plasma has the high density has an electron density such that there are 1,010 electrons or more per cm3, and    the region where the plasma has the low electron temperature is a region where the electron temperature is 1 electronvolt or less.    
     
     
         30 . A plasma processing apparatus in which a ring-shaped antenna is disposed at a top of a ceiling surface of a processing chamber, power is supplied to the antenna by power supply means to generate a plasma within the processing chamber, and processing is applied to a surface of a substrate by atoms and molecules excited and activated there, wherein 
 a high frequency power source with an output of 2 kW to 15 kW and a frequency of 10 MHz to 30 MHz is connected to the antenna, and    a distance from a lower surface of the antenna to the substrate is set at 190 mm or more in order to locate the substrate in a region where an electron temperature is 1 electronvolt or less.    
     
     
         31 . A plasma processing apparatus in which a ring-shaped antenna is disposed at a top of a ceiling surface of a processing chamber, power is supplied to the antenna by power supply means to generate a plasma within the processing chamber, and processing is applied to a surface of a substrate by atoms and molecules excited and activated there, wherein 
 a high frequency source with an output of 2 kW to 15 kW and a frequency of 10 MHz to 30 MHz is connected to the antenna, and    a distance from a lower surface of the antenna to the substrate is set at 200 mm or more.    
     
     
         32 . A plasma processing method which supplies power at a frequency of 10 MHz to 30 MHz from above a top of a ceiling surface of a tubular container to generate a plasma within the tubular container, and applies processing to a surface of a substrate by atoms and molecules excited and activated there, comprising 
 applying the processing to the substrate in a region where the plasma has a high density, but has a low electron temperature.