Method of manufacturing tape wiring substrate

Abstract

A method of manufacturing a tape wiring substrate, by which the production cost can be reduced by a simplified manufacturing process. A fine wiring pattern having fine pitches can be formed. The method of manufacturing a tape wiring substrate includes preparing a base film, forming a metal layer on the base film, and processing the metal layer into a wiring pattern using a laser. In addition, the metal layer is partially removed using the laser, and a wiring pattern is formed by a subsequent wet etching.

1 . A method of manufacturing a tape wiring substrate comprising: 
 preparing a base film;    forming a metal layer on the base film; and    etching the metal layer into a wiring pattern using a laser that produces laser radiation that is incident on the metal layer.    
     
     
         2 . The method of  claim 1 , wherein the laser generates from a source gas of any one selected from the group consisting of ArF, KrF, XeC1, F 2 , Nd-YAG (neodymium-yttrium aluminum garnet), and CO 2 .  
     
     
         3 . The method of  claim 1 , wherein the laser is a pulse type.  
     
     
         4 . The method of  claim 1 , wherein the laser radiation passes through a beam homogenizer before being incident on the metal layer.  
     
     
         5 . The method of  claim 1 , wherein a refrigerant is provided for the metal layer while etching the wiring pattern.  
     
     
         6 . The method of  claim 5 , wherein the refrigerant is any one selected from the group consisting of methylether, ethyl chloride, methyl formate, isobutane, dichloroethylene, methylene chloride, ethylether, ammonia, carbon dioxide, sulfur dioxide, methyl chloride, and CFC-based refrigerant (Freon).  
     
     
         7 . The method of  claim 1 , wherein the metal layer includes copper.  
     
     
         8 . A method of manufacturing a tape wiring substrate comprising: 
 preparing a base film;    forming a metal layer on the base film;    at least partially removing an area other than a wiring pattern in the metal layer using a laser that produces radiation that is incident on the metal layer; and    etching the remaining area other than the wiring pattern to form the wiring pattern.    
     
     
         9 . The method of  claim 8 , wherein the laser generates from a source gas of any one selected from the group consisting of ArF, KrF, XeC1, F 2 , Nd-YAG (neodymium-yttrium aluminum garnet), and CO 2 .  
     
     
         10 . The method of  claim 8 , wherein the laser is a pulse type.  
     
     
         11 . The method of  claim 8 , wherein the laser radiation passes through a beam homogenizer before being incident on the metal layer.  
     
     
         12 . The method of  claim 8 , wherein a refrigerant is provided for the metal layer while at least partially removing the area.  
     
     
         13 . The method of  claim 12 , wherein the refrigerant is any one selected from the group consisting of methylether, ethyl chloride, methyl formate, isobutane, dichloroethylene, methylene chloride, ethylether, ammonia, carbon dioxide, sulfur dioxide, methyl chloride, and CFC-based refrigerant (Freon).  
     
     
         14 . The method of  claim 8 , wherein the etching is wet etching.  
     
     
         15 . The method of  claim 14 , wherein the wet etching exposes the base film disposed under the area other than the wiring pattern.  
     
     
         16 . The method of  claim 8 , wherein the metal layer includes copper.  
     
     
         17 . The method of  claim 15 , wherein the wet etching is performed using an aqueous solution containing FeCl 3 , FeCl, and HCl as an etchant.  
     
     
         18 . The method of  claim 15 , wherein the wet etching is performed using an aqueous solution containing CuCl 2 , CuCl, and HCl as an etchant.  
     
     
         19 . The method of  claim 8 , wherein the forming the metal layer is performed by laminating.  
     
     
         20 . The method of  claim 8 , wherein the forming the metal layer is performed by electroplating.  
     
     
         21 . The method of  claim 8 , prior to the forming the metal layer, comprising forming a seed layer on the base film by sputtering.  
     
     
         22 . The method of  claim 21 , wherein the seed layer is made of a material selected from the group consisting of Cr, Ti, Ni, and a combination thereof.