Vertical type semiconductor device producing apparatus

Abstract

A vertical type semiconductor device producing apparatus comprises a vertical type reaction chamber which is to accommodate a plurality of stacked substrates; an exhaust path which exhausts the reaction chamber, a vacuum exhaust device which exhausts the reaction chamber through the exhaust path; an exhaust valve which opens and closes the exhaust path; a first supply path which supplies a first kind of gas, which contributes to film formation, to the reaction chamber; a second supply path which supplies a second kind of gas, which contributes to the film formation, to the reaction chamber; a first and a second gas supply valves which respectively open and close the first and second supply paths; and a controller which controls the exhaust valve and the first and second gas supply valves such that when the first kind of gas is supplied to the reaction chamber, the first kind of gas is supplied to the reaction chamber from the first supply path in a state in which exhaust of the reaction chamber is being stopped to expose the plurality of substrates in the reaction chamber to the first kind of gas, and when the second kind of gas is supplied to the reaction chamber, the second kind of gas is supplied to the reaction chamber through the second supply path in a state in which the reaction chamber is being exhausted by the vacuum exhaust device to expose the plurality of substrates in the reaction chamber to the second kind of gas.

1 . A semiconductor device producing apparatus, comprising: 
 a reaction chamber accommodating at least one semicon    a vacuum exhaust device which exhausts said reaction ductor substrate; an exhaust tube which exhausts said reaction chamber; chamber through said exhaust tube;    an exhaust valve which opens and closes said exhaust tube;    a first supply tube which supplies a first process gas to said reaction chamber;    a second supply tube which supplies a second process to said reaction chamber;    a first supply valve which opens and closes said first supply tube;    a second supply valve which opens and closes said second supply tube; and    a controller which controls said exhaust valve, said first supply valve and said second supply valve, wherein    said first and second gases are supplied alternately into said reaction chamber to form a desired film on said at least one substrate;    when said at least one substrate is exposed to said first process gas not activated by plasma excitation, said first process gas is supplied to said reaction chamber through said first supply tube with said exhaust tube being closed, and    when said at least one substrate is exposed to said second process gas activated by plasma excitation, said second process gas is supplied to said reaction chamber through said second supply tube with said reaction chamber being exhausted by said vacuum exhaust device.    
   
   
       2 . A semiconductor device producing apparatus as recited in  claim 1 , wherein said first process gas is dichlorsilane.  
   
   
       3 . A semiconductor device producing apparatus as recited in  claim 1 , wherein said second process gas is ammonia.  
   
   
       4 . A semiconductor device producing apparatus as recited in  claim 1 , wherein 
 said first supply tube includes a gas reservoir in which said first process gas is reserved, and    before said first process gas is supplied to said reaction chamber, said controller allows said first process gas to flow into said first supply tube to reserve the first process gas in said gas reservoir, and said controller allows said first process gas reserved in said gas reservoir to be supplied to said reaction chamber in a state in which the exhaust of said reaction chamber is stopped.    
   
   
       5 . A semiconductor device producing apparatus as recited in  claim 1 , wherein 
 a pressure in said reaction chamber is set substantially from 266 to 931 Pa when said at least one substrate is exposed to said first process gas, and    a pressure in said reaction chamber is set substantially from 10 to 100 Pa when said at least one substrate is exposed to said second process gas.    
   
   
       6 . A semiconductor device producing apparatus as recited in  claim 1 , wherein 
 said controller controls said exhaust valve, said first supply valve and said second supply valve such that    after supplying of said first process gas is supplied to said reaction chamber is stopped and after supplying of said second process to said reaction chamber is stopped, said reaction chamber is exhausted through said exhaust tube by said vacuum exhaust device to remove remaining said first process gas or said second process gas.    
   
   
       7 . A semiconductor device producing apparatus as recited in  claim 4 , wherein conductance between said gas reservoir and said reaction chamber is substantially equal to 1.5×10 −3 m 3 /S or higher.  
   
   
       8 . A semiconductor device producing apparatus comprising: 
 a reaction chamber accommodating at least one semiconductor substrate; an exhaust tube which exhausts said reaction chamber;    a vacuum exhaust device which exhausts said reaction chamber through said exhaust tube;    an exhaust valve which opens and closes said exhaust tube and adjusts an opening thereof;    a first supply tube which supplies a first process gas to said reaction chamber;    a second supply tube which supplies a second process gas to said reaction chamber;    a first supply valve which opens and closes said first supply tube;    a second supply valve which opens and closes said second supply tube; and    a controller which controls said exhaust valve, said first supply valve and said second supply valve, wherein    said first and second gases are supplied alternately into said reaction chamber to form a desired film on said at least one substrate;    when said at least one substrate is exposed to said first process gas activated by plasma excitation, a pressure in said reaction chamber is set to be a reduced pressure, and    when said at least one substrate is exposed to said second process gas not activated by plasma excitation, a pressure in said reaction chamber is set to be higher than the reduced pressure by 166 Pa or more.    
   
   
       9 . A semiconductor device producing apparatus comprising: 
 a reaction chamber accommodating at least one semiconductor substrate;    an exhaust tube which exhausts said reaction chamber;    a vacuum exhaust device which exhausts said reaction chamber through said exhaust tube;    an exhaust valve which opens and closes said exhaust tube and adjusts an opening thereof;    a first supply tube which supplies a first process gas to said reaction chamber;    a second supply tube which supplies a second process gas to said reaction chamber;    a first supply valve which opens and closes said first supply tube;    a second supply valve which opens and closes said second supply tube; and    a controller which controls said exhaust valve, said first supply valve and said second supply valve, wherein    said first and second gases are supplied alternately into said reaction chamber putting exhaustion of preceding remaining gases therebetween, to form a desired film on said at least one substrate;    when said at least one substrate is exposed to said first process gas activated by plasma excitation, a pressure in said reaction chamber is set to be a reduced pressure;    when remaining of said first process gas is exhausted from said reaction chamber, a pressure in said reaction chamber is set to 20 Pa or less, and    when said at least one substrate is exposed to said second process gas not activated by plasma excitation, a pressure in said reaction chamber is set to be higher by 246 Pa or more than the pressure where remaining of said first process gas is exhausted.    
   
   
       10 . A semiconductor device producing apparatus comprising: 
 a reaction chamber accommodating at least one semiconductor substrate;    an exhaust tube which exhausts said reaction chamber;    a vacuum exhaust device which exhausts said reaction chamber through said exhaust tube;    an exhaust valve which opens and closes said exhaust tube and adjusts an opening thereof;    a first supply tube which supplies a first process gas to said reaction chamber;    a second supply tube which supplies a second process gas to said reaction chamber;    a first supply valve which opens and closes said first supply tube;    a second supply valve which opens and closes said second supply tube; and    a controller which controls said exhaust valve, said first supply valve and said second supply valve, wherein    said first and second gases are supplied alternately into said reaction chamber to form a desired film on said at least one substrate;    when said at least one substrate are exposed to said first process gas activated by plasma excitation, a pressure in said reaction chamber is set to be substantially in a range of 10-100 Pa, and    when said at least one substrate are exposed to said second process gas not activated by plasma excitation, a pressure in said reaction chamber is set to be substantially in a range of 266-931 Pa.    
   
   
       11 . A semiconductor device producing apparatus as recited in  claim 8 , wherein 
 said first supply tube includes a gas reservoir in which said first process gas is reserved, and    before said first process gas is supplied to said reaction chamber, said controller allows said first process gas to flow into said first supply tube to reserve the first process gas in said gas reservoir, and    said controller allows said first process gas reserved in said gas reservoir to be supplied to said reaction chamber in a state in which the exhaust of said reaction chamber is stopped.    
   
   
       12 . A semiconductor device producing apparatus as recited in  claim 8 , wherein 
 said alternate supplying of said first process gas and second process gas into said reaction chamber is repeated a plurality of times.    
   
   
       13 . A semiconductor device producing apparatus as recited in  claim 8 , wherein 
 said first process gas is ammonia and said second process gas is dichlorsilane.    
   
   
       14 . A semiconductor device producing apparatus as recited in  claim 8 , wherein said controller controls said exhaust valve, said first supply valve and said second supply valve such that 
 when said at least one substrate is exposed to said first process gas, said first process gas is supplied to said reaction chamber through said first supply tube in a state in which said reaction chamber is exhausted by said vacuum exhaust device: and    when said at least one substrate is exposed to said first process gas, said second process gas is supplied to said reaction chamber through said second supply tube in a state in which exhaust from said reaction chamber is stopped.    
   
   
       15 . A semiconductor device producing apparatus as recited in  claim 9 , wherein 
 said first supply tube has a gas reservoir in which said first process gas is reserved, and    before said first process gas is supplied to said reaction chamber, said controller allows said first process gas to flow into said first supply tube to reserve the first process gas in said gas reservoir, and said controller allows said first process gas reserved in said gas reservoir to be supplied to said reaction chamber in a state in which the exhaust of said reaction chamber is stopped.    
   
   
       16 . A semiconductor device producing apparatus as recited in  claim 9 , wherein 
 said alternate supplying of said first process gas and second process gas to said reaction chamber is repeated a plurality of times.    
   
   
       17 . A semiconductor device producing apparatus as recited in  claim 9 , wherein 
 said first process gas is ammonia and said second process gas is dichlorsilane.    
   
   
       18 . A semiconductor device producing apparatus as recited in  claim 9 , wherein 
 said controller controls said exhaust valve, said first supply valve and said second supply valve such that    when said at least one substrate is exposed to said first process gas, said first process gas is supplied to said reaction chamber through said first supply tube in a state in which said reaction chamber is exhausted by said vacuum exhaust device; and    when said at least one substrate is exposed to said first process gas, said second process gas is supplied to said reaction chamber through said second supply tube in a state in which exhaust from said reaction chamber is stopped.    
   
   
       19 . A semiconductor device producing apparatus as recited in  claim 10 , wherein 
 said first supply tube has a gas reservoir in which said first process gas is reserved, and    before said first process gas is supplied to said reaction chamber, said controller allows said first process gas to flow into said first supply tube to reserve the first process gas in said gas reservoir, and said controller allows said first process gas reserved in said gas reservoir to be supplied to said reaction chamber in a state in which the exhaust of said reaction chamber is stopped.    
   
   
       20 . A semiconductor device producing apparatus as recited in  claim 10 , wherein 
 said alternate supplying of said first process gas and second process gas to said reaction chamber is repeated a plurality of times.    
   
   
       21 . A semiconductor device producing apparatus as recited in  claim 10 , wherein 
 said first process gas is ammonia and said second process gas is dichlorsilane.    
   
   
       22 . A semiconductor device producing apparatus as recited in  claim 10 , wherein 
 said controller controls said exhaust valve, said first supply valve and said second supply valve such that    when said at least one substrate is exposed to said first process gas, said first process gas is supplied to said reaction chamber through said first supply tube in a state in which said reaction chamber is exhausted by said vacuum exhaust device; and    when said at least one substrate is exposed to said first process gas, said second process gas is supplied to said reaction chamber through said second supply tube in a state in which exhaust from said reaction chamber is stopped.    
   
   
       23 . A semiconductor device producing apparatus comprising: 
 a reaction chamber accommodating at least one semiconductor substrate; an exhaust tube which exhausts said reaction chamber;    a vacuum exhaust device which exhausts said reaction chamber through said exhaust tube;    an exhaust valve which opens and closes said exhaust tube;    a first supply tube which supplies a first process gas to said reaction chamber;    a second supply tube which supplies a second process gas to said reaction chamber;    a first supply valve which opens and closes said first supply tube;    a second supply valve which opens and closes said second supply tube; and    a controller which controls said exhaust valve, said first supply valve and said second supply valve, wherein    said first and second process gases are alternately supplied to said reaction chamber to form a desired film on said at least one substrate;    when said at least one substrate is exposed to said first process gas not activated by plasma excitation, said first process gas is supplied to said reaction chamber through said first supply tube for substantially in the range of 2-4 seconds to increase a pressure in said reaction chamber and thereafter to expose said at least one substrate to the increased pressure atmosphere for substantially in the range of 2-4 seconds, and    when said at least one substrate is exposed to said second process gas, said second process gas is supplied to said reaction chamber through said second supply tube with said reaction chamber being exhausted by said vacuum exhaust device.    
   
   
       24 . A semiconductor device producing apparatus, comprising: 
 a reaction chamber which accommodates at least one substrate;    an exhaust path which exhausts said reaction chamber;    a vacuum exhaust device which exhausts said reaction chamber through said exhaust path;    an exhaust valve which opens and closes said exhaust path;    a first supply path which supplies a first process gas which contributes to a film forming to said reaction chamber;    a second supply path which supplies a second process gas which contributes to the film forming to said reaction chamber;    a first supply valve which opens and closes said first supply path;    a second supply valve which opens and closes said second supply path; and    a controller which controls said exhaust valve, said first supply valve and said second supply valve such that    said first process and said second process gas are alternately supplied to said reaction chamber, said alternate supply being repeated a plurality of times, when said first process gas is supplied to said reaction chamber, said first process gas is supplied to said reaction chamber through said first supply path with exhaust of said reaction chamber being stopped to expose said at least one substrate to said first process gas, and when said second process gas is supplied to said reaction chamber, said second process gas is supplied to said reaction chamber through said second supply path with a pressure of said reaction chamber being maintained a predetermined pressure and said reaction chamber being exhausted by said vacuum exhaust device to expose said at least one substrate to said process gas.