Method of manufacturing semiconductor device

Abstract

Disclosed is a method for manufacturing a semiconductor device, comprising depositing an electrically conductive film on an insulating film formed above a semiconductor substrate and having a recessed portion, polishing the surface of the electrically conductive film constituting a processing surface with an alkaline slurry on a polishing cloth to expose the surface of the insulating film to the outside while leaving the electrically conductive film selectively within the recessed portion of the insulating film, treating the processing surface, in which the surface of the insulating film is exposed to the outside by the polishing treatment with the alkaline slurry, with a deionized water and, then, with an acidic washing solution so as to render the processing surface acidic, and transferring the semiconductor substrate from the position on the polishing cloth into a washing unit while keeping the processing surface acidic.

1 . A method for manufacturing a semiconductor device, comprising: 
 depositing an electrically conductive film above an insulating film formed above a semiconductor substrate and having a recessed portion;    polishing the surface of the electrically conductive film constituting a processing surface with an alkaline slurry on a polishing cloth to expose the surface of the insulating film to the outside while leaving the electrically conductive film selectively within the recessed portion of the insulating film;    treating the processing surface, in which the surface of the insulating film is exposed to the outside by the polishing treatment with the alkaline slurry, with a deionized water and, then, with an acidic washing solution so as to render the processing surface acidic; and    transferring the semiconductor substrate from the position on the polishing cloth into a washing unit while keeping the processing surface acidic.    
   
   
       2 . The method according to  claim 1 , wherein the electrically conductive film comprises a Cu film deposited above the insulating film with a liner material interposed therebetween.  
   
   
       3 . The method according to  claim 1 , wherein the insulating film comprises a film formed of a hydrophobic material.  
   
   
       4 . The method according to  claim 1 , wherein the washing solution is an aqueous solution containing at least one selected from the group consisting of citric acid, oxalic acid, maleic acid, and malonic acid.  
   
   
       5 . A method for manufacturing a semiconductor device, comprising: 
 depositing an electrically conductive film above an insulating film formed above a semiconductor substrate and having a recessed portion;    polishing the surface of the electrically conductive film constituting a processing surface with an acidic slurry on a polishing cloth so as to make the processing surface acidic and to expose the surface of the insulating film to the outside while leaving the electrically conductive film selectively within the recessed portion of the insulating film; and    transferring the semiconductor substrate from the position on the polishing cloth into a washing unit while keeping acidic the processing surface in which the surface of the insulating film is exposed to the outside.    
   
   
       6 . The method according to  claim 5 , wherein the electrically conductive film comprises a Cu film deposited above the insulating film with a liner material interposed therebetween.  
   
   
       7 . The method according to  claim 5 , wherein the insulating film comprises a film formed of a hydrophobic material.  
   
   
       8 . A method for manufacturing a semiconductor device, comprising: 
 supplying a liquid onto a polishing cloth under the state that a processing surface formed on a semiconductor substrate is abutted against the polishing cloth so as to treat the processing surface while monitoring a property value on the polishing cloth, the property value being an acid concentration or a pH value; and    allowing the semiconductor substrate to be retreated from the position on the polishing cloth into a washing unit upon detection that the property value has been deviated from within a prescribed range set in advance.    
   
   
       9 . The method according to  claim 8 , wherein the processing surface is formed of the surface of the insulating film formed above the semiconductor substrate and includes an electrically conductive film buried in a recessed portion of the insulating film.  
   
   
       10 . The method according to  claim 9 , wherein the liquid comprises a washing solution formed of an acidic aqueous solution and a deionized water supplied after the washing solution.  
   
   
       11 . The method according to  claim 10 , wherein the washing solution is an aqueous solution containing at least one selected from the group consisting of citric acid, oxalic acid, maleic acid and malonic acid.  
   
   
       12 . The method according to  claim 9 , further comprising: 
 depositing the electrically conductive film above the insulating film formed above the semiconductor substrate and having the recessed portion; and    polishing the surface of the electrically conductive film with a slurry on the polishing cloth to leave selectively the electrically conductive film within the recessed portion of the insulating film, thereby obtaining the insulating film having the electrically conductive film buried in the recessed portion.    
   
   
       13 . The method according to  claim 12 , wherein the insulating film having the electrically conductive film buried in the recessed portion is obtained by polishing the surface of the electrically conductive film with an alkaline slurry and, then, with a deionized water on the polishing cloth.  
   
   
       14 . The method according to  claim 9 , wherein the insulating film comprises a film formed of a hydrophobic material.  
   
   
       15 . The method according to  claim 8 , wherein the processing surface is constituted by the surface of the electrically conductive film deposited above the insulating film formed above the semiconductor substrate and having a recessed portion.  
   
   
       16 . The method according to  claim 15 , wherein the liquid comprises an acidic slurry and a deionized water supplied after the acidic slurry.  
   
   
       17 . The method according to  claim 16 , wherein the electrically conductive film is polished with the acidic slurry to leave selectively the electrically conductive film within the recessed portion of the insulating film, thereby exposing the surface of the insulating film to the outside, followed by supplying the deionized water onto the surface of the insulating film having the electrically conductive film buried in the recessed portion.  
   
   
       18 . The method according to  claim 15 , wherein the insulating film comprises a film formed of a hydrophobic material.  
   
   
       19 . The method according to  claim 8 , wherein the acid concentration constitutes the property value, and the prescribed range set in advance is a range having a lower limit that is not lower than 0.1% by weight.  
   
   
       20 . The method according to  claim 8 , wherein the pH value constitutes the property value, and the prescribed range set in advance is a range having an upper limit that is not higher than pH 3.