Semiconductor device

Abstract

A semiconductor device superior in heat dissipating performance and permitting reduction of the packaging cost is provided. The semiconductor device comprises a sealing body formed of an insulating resin, a semiconductor chip positioned within the sealing body, the semiconductor chip having a gate electrode and a source electrode on a first main surface thereof and having a back electrode (drain electrode) on a second main surface thereof, a drain electrode plate projecting in a gull wing shape on one end side of the sealing body, an upper surface of a portion of the drain electrode plate which portion is positioned in the sealing body being exposed from the sealing body and a lower surface thereof being connected to the back electrode through an adhesive, a gate electrode plate projecting in a gull wing shape on an opposite end side of the sealing body and being connected to the gate electrode within the sealing body, a source electrode plate projecting in a gull wing shape on the opposite end side of the sealing body and being connected to the source electrode within the sealing body, a depression formed in the surface of the drain electrode plate within the sealing body and filled with the resin which forms the sealing body, and a projecting portion formed on the surface of the drain electrode plate within the sealing body and engaged with the sealing body. The drain electrode plate and the source electrode plate branch into plural branch pieces (leads) serving as gull wing-shaped surface mounting terminals.

1 . A semiconductor device comprising: 
 a sealing body formed of an insulating resin, the sealing body having an upper surface, a lower surface opposite to the upper surface, and side faces connecting the upper surface and the lower surface with each other;    a semiconductor chip positioned within the sealing body, the semiconductor chip having a plurality of electrodes over a first main surface thereof and a back electrode over a second main surface thereof opposite to the first main surface;    a plurality of first electrode plates, one end sides of the first electrode plates being positioned within the sealing body, the electrodes of the semiconductor chip being connected to upper surfaces of the one end sides of the first electrode plates, opposite end sides of the first electrode plates projecting sideways of the sealing body and being bent to form surface mounting terminals; and    a second electrode plate, an upper surface of one end side of the second electrode plate being exposed to the upper surface of the sealing body, the back electrode over the semiconductor chip being connected through an adhesive to a lower surface of the second electrode plate opposite to the upper surface of the one end side, an opposite end side of the second electrode plate projecting sideways of the sealing body and being bent to form surface mounting terminals.    
     
     
         2 . A semiconductor device according to  claim 1 , wherein the portion of the second electrode plate projecting sideways from the sealing body branches into plural portions and the plural branched portions constitute the surface mounting terminals.  
     
     
         3 . A semiconductor device according to  claim 1 , wherein a depression of a part of which reaches an edge of the second electrode plate is formed in the upper surface of the second electrode plate, and the resin which forms the sealing body is buried into the depression.  
     
     
         4 . A semiconductor device according to  claim 3 , wherein the depression is formed in a direction intersecting the extending direction of the surface mounting terminals of the second electrode plate.  
     
     
         5 . A semiconductor device according to  claim 1 , wherein a projecting portion is formed over the surface of the second electrode plate which surface is in contact with the sealing body, the projecting portion biting into the sealing body.  
     
     
         6 . A semiconductor device according to  claim 5 , wherein the projecting portion is formed in a direction intersecting the extending direction of the surface mounting terminals of the second electrode plate.  
     
     
         7 . A semiconductor device according to  claim 1 , wherein a depression into which the resin which forms the sealing body is buried is formed in the upper surface of an edge of the second electrode plate at a position between adjacent said surface mounting terminals, and a projecting portion which bites into the sealing body is formed over the lower surface of the electrode plate at a position corresponding to the depression.  
     
     
         8 . A semiconductor device according to  claim 1 , wherein the second electrode plate is provided in a plural number and the plural second electrode plates are electrically connected respectively to separate electrodes formed on the first main surface of the semiconductor chip within the sealing body.  
     
     
         9 . A semiconductor device according to  claim 1 , wherein the electrodes formed over the first main surface of the semiconductor chip are salient electrodes.  
     
     
         10 . A semiconductor device according to  claim 1 , wherein one end portion of the second electrode plate projects from one side of the sealing body, and one end portion of the first electrode plate projects from an opposite side opposite to the one side.  
     
     
         11 . A semiconductor device according to  claim 1 , wherein a transistor is formed over the semiconductor chip, a first electrode and a control electrode of the transistor are formed over the first main surface of the semiconductor chip, a second electrode of the transistor is formed as a back electrode over the second main surface of the semiconductor chip, the first electrode being connected to one said first electrode plate, and the control electrode being connected to another said first electrode plate.  
     
     
         12 . A semiconductor device according to  claim 1 , wherein a portion of at least the first electrode plate connected to the first electrode which portion projects from the sealing body branches into plural portions to form a plurality of surface mounting terminals.  
     
     
         13 . A semiconductor device comprising: 
 a sealing body formed of an insulating resin;    a semiconductor chip positioned within the sealing body;    an electrode plate formed by a metallic plate, the electrode plate being electrically connected to one electrode of the semiconductor chip and having an upper surface exposed to an upper surface of the sealing body, wherein a mark represented by concave and convex is formed on the upper surface of the electode plate.    
     
     
         14 . A semiconductor device according to  claim 13 , wherein the mark is formed by concave and convex formed by the radiation of a laser beam.  
     
     
         15 - 25 . (canceled)