System and method for mitigating oxide growth in a gate dielectric

Abstract

Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in oxide growth can be achieved by maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth of the gate dielectric layer between at least two sequential process steps used in the fabrication the gate dielectric structure. Maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth also improves the uniformity of nitrogen implanted in the gate dielectric.

1 - 15 . (canceled)  
   
   
       16 . A processing system for use in forming at least part of a gate dielectric structure on a substrate, comprising: 
 a first process chamber for forming a gate dielectric layer over the substrate;    a second process chamber for introducing nitrogen atoms in the gate dielectric layer to mitigate leakage associated with operation of the transistor device, the introduction of nitrogen atoms causing damage to the gate dielectric layer; and    an interface for maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth during transfer of the gate dielectric between the first process chamber and the second process chamber.    
   
   
       17 . The processing system of  claim 16 , the interface comprising a transfer chamber, the transfer chamber including an atmosphere being maintained at a pressure substantially below about 760 Torr but above vacuum and being actively purged with an inert gas.  
   
   
       18 . The processing system of  claim 17 , the atmosphere being maintained at a pressure of about 3 Torr to about 200 Torr.  
   
   
       19 . The processing system of  claim 17 , the atmosphere being actively purged at a flow rate of about 2 liters per minute to about 5 liters per minute.  
   
   
       20 . The processing system of  claim 17 , further comprising a third processing chamber for performing a re-oxidation or densifying process to remove damage from the gate dielectric layer and an interface for maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth during transfer of the gate dielectric layer between the second process chamber and the third process chamber.  
   
   
       21 . The processing system of  claim 20 , further comprising a fourth process chamber for forming a conductive layer over the re-oxidized or densified gate dielectric layer and an interface for maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth during transfer of the gate dielectric layer between the third process chamber and the fourth process chamber.  
   
   
       22 . The processing system of  claim 21 , further comprising a transfer chamber, the transfer chamber at least partially forming the interface between the first process chamber and the second process chamber, the interface between the second process chamber and the third process chamber, and the interface between the third process chamber and the fourth process chamber.  
   
   
       23 . The processing system of  claim 22 , the transfer chamber including an atmosphere being maintained at a pressure substantially below about 760 Torr but above vacuum and being actively purged with an inert gas.