Table of wafer polishing apparatus, method for polishing semiconductor wafer, and method for manufacturing semiconductor wafer

Abstract

A table for a wafer polishing apparatus having superior heat-resistant, anti-thermal-shock, and anti-abrasion characteristics and capable of increasing the diameter of a semiconductor wafer while improving the quality of the wafer. The table includes a plurality of superimposed bases each of which is formed of silicide ceramic or carbide ceramic. The bases are joined together by an adhesive layer. A fluid passage is formed in a joining interface between the bases.

1 . A table having a polishing surface for polishing a semiconductor wafer held by a wafer holding plate of a wafer polishing apparatus, wherein the table is formed of a material, the Young's modulus of which is 1.0 kg/cm 2 (×10 6 ) or greater.  
     
     
         2 . The table according to  claim 1 , wherein the material is ceramic.  
     
     
         3 . The table according to  claim 1 , wherein the material is a silicon carbide sinter.  
     
     
         4 . The table according to  claim 3 , wherein the silicon carbide sinter is dense.  
     
     
         5 . The table according to  claim 3 , wherein the Young's modulus of the silicon carbide sinter is 1.0 to 5.0 kg/cm 2  (× 10   6 ).