Semiconductor device having silicon carbide and conductive pathway interface

Abstract

The present invention provides an in situ plasma reducing process to reduce oxides or other contaminants, using a compound of nitrogen and hydrogen, typically ammonia, at relatively low temperatures prior to depositing a subsequent layer thereon. The adhesion characteristics of the layers are improved and oxygen presence is reduced compared to the typical physical sputter cleaning process of an oxide layer. This process may be particularly useful for the complex requirements of a dual damascene structure, especially with copper applications.

1 . A semiconductor device comprising: 
 an interface defined by a first insulating layer comprising silicon carbide and one or more conductive pathways disposed within said layer, the interface having oxidation reduced portions; and    a second insulating layer disposed upon said interface coincident with removal of said oxidation reduced portions.    
   
   
       2 . The semiconductor device of  claim 1  wherein the second insulating layer comprises at least one layer selected from the group consisting of a patterned etch stop layer, a barrier layer, and a film comprising silicon carbide.  
   
   
       3 . The semiconductor device of  claim 1  wherein the conductive pathways are formed from at least one of copper, titanium, tantalum, and tungsten.  
   
   
       4 . A semiconductor device comprising: 
 an interface defined by a first insulating layer and one or more conductive pathways disposed within said layer, the interface having oxidation reduced portions; and    a second insulating layer comprising silicon carbide disposed upon said interface coincident with removal of said oxidation reduced portions.    
   
   
       5 . A semiconductor device interface comprising: 
 a layer comprising silicon carbide;    one or more conductive devices disposed within said layer, said layer and conductive devices defining said interface,    wherein said interface is treated with a continuous plasma treatment to remove oxidation and deposit a second layer thereupon.    
   
   
       6 . The semiconductor device interface of  claim 5  wherein the conductive devices are formed from at least one of copper, titanium, tantalum, and tungsten.