Integration manufacturing process for MEMS device

Abstract

A method for manufacturing an MEMS device is provided. The method includes steps of a) providing a first substrate having a concavity located thereon, b) providing a second substrate having a connecting area and an actuating area respectively located thereon, c) forming plural microstructures in the actuating area, d) mounting a conducting element in the connecting area and the actuating area, e) forming an insulating layer on the conducting element and f) connecting the first substrate to the connecting area to form the MEMS device. The concavity contains the plural microstructures.

1 . A method for manufacturing an MEMS device, comprising steps of: 
 a) providing a first substrate having a concavity located thereon;    b) providing a second substrate having a connecting area and an actuating area respectively located thereon;    c) forming plural microstructures in said actuating area;    d) mounting a conducting element in said connecting area and said actuating area;    e) forming an insulating layer on said conducting element; and    f) connecting said first substrate to said connecting area to form said MEMS device,    wherein said concavity contains said plural microstructures.    
     
     
         2 . The method as claimed in  claim 1 , wherein said first substrate is one of a glass substrate and a quartz substrate.  
     
     
         3 . The method as claimed in  claim 1 , wherein said concavity, said connecting area, and said actuating area are respectively formed by etching.  
     
     
         4 . The method as claimed in  claim 1 , wherein said plural microstructures comprise a testing microstructure.  
     
     
         5 . The method as claimed in  claim 4  further comprising a step of: 
 g) determining a property of said MEMS device according to a result obtained by testing a performance of said testing microstructure with a testing system.    
     
     
         6 . The method as claimed in  claim 5 , wherein said testing system is a Doppler measuring device.  
     
     
         7 . The method as claimed in  claim 4 , wherein said testing microstructure is an airtightness testing component.  
     
     
         8 . The method as claimed in  claim 4 , wherein said testing microstructure is one of a mirror and a cantilever.  
     
     
         9 . The method as claimed in  claim 1 , wherein said conducting element is made of one of a metal and a polysilicon layer.  
     
     
         10 . The method as claimed in  claim 1 , wherein said second substrate is a silicon chip.  
     
     
         11 . The method as claimed in  claim 1 , wherein said step f) further comprises steps of: 
 f1) forming a metal connecting layer on said insulating layer; and    f2) heating said metal connecting layer for connecting said first substrate to said connecting area.    
     
     
         12 . The method as claimed in  claim 11 , wherein said metal connecting layer is an aurum/indium layer.  
     
     
         13 . The method as claimed in  claim 11 , wherein said step f2) is performed by one of a micromachining and a laser.  
     
     
         14 . A method for manufacturing an MEMS device, comprising steps of: 
 a) forming a cover;    b) forming plural microstructures on a substrate, wherein said plural microstructures comprise a testing microstructure;    c) locating a conducting element on said substrate for controlling said plural microstructures;    d) forming an insulating layer on said conducting device; and    e) connecting said cover to said substrate for forming said MEMS device,    wherein said cover covers said plural microstructures.    
     
     
         15 . The method as claimed in  claim 14 , wherein said cover comprises a concavity for containing said plural microstructures.  
     
     
         16 . The method as claimed in  claim 14 , wherein said testing microstructure is formed by a Hybrid Surface and Bulk Micromachining (HSBM).  
     
     
         17 . A method integrating a packaging step and a setting step of a testing element therein for manufacturing a resonance device, comprising steps of: 
 a) manufacturing a cover having a concavity;    b) providing a substrate;    c) locating plural microstructures on said substrate, wherein said plural microstructures comprise said testing element;    d) locating a conducting element on said substrate for controlling said plural microstructures; and    e) proceeding said packaging step in a vacuum to form said resonance device,    wherein said concavity contains said testing element.    
     
     
         18 . The method as claimed in  claim 17 , wherein said step e) is performed by connecting said cover and said substrate.  
     
     
         19 . The method as claimed in  claim 17 , wherein said resonance device is an MEMS device.  
     
     
         20 . The method as claimed in  claim 17 , wherein said resonance device has a performance judged by a property performed by said testing element in a predetermined environment.  
     
     
         21 . A method for testing an airtightness of a resonance device, comprising steps of: 
 a) locating a testing component on a lower substrate of said resonance device;    b) packaging said lower substrate by a cover in a vacuum;    c) testing said resonance device under a predetermined environment and judging said airtightness of said resonance device by a property performed by said testing component in a predetermined environment.    
     
     
         22 . The method as claimed in  claim 21 , wherein said testing component is one of a mirror and a cantilever.  
     
     
         23 . The method as claimed in  claim 22 , wherein said step a) further comprises steps of: 
 a1) locating a conducting device on said lower substrate;    a2) forming an insulating layer on said conducting element; and    a3) forming a metal connecting layer on said insulating layer.    
     
     
         24 . The method as claimed in  claim 23 , wherein said metal connecting layer is used for connecting said cover to said lower substrate in said step b).  
     
     
         25 . An MEMS device formed by an integration method comprising a packaging step and a setting step of a testing element provided therein, comprising: 
 a substrate comprising an actuating element, at least a testing element and a conducting layer;    an insulating layer located on said conducting layer;    a connecting layer located on said insulating layer; and    a cover connected to said substrate via said connecting layer.    
     
     
         26 . The MEMS device as claimed in  claim 25 , wherein said conducting element is formed by a wire.  
     
     
         27 . The MEMS device as claimed in  claim 25 , wherein said wire has a first end connected to one of said actuating element and said testing element, and a second end extended to outside of said MEMS device.  
     
     
         28 . The MEMS element as claimed in  claim 25 , wherein said testing component is one of a mirror and a cantilever.  
     
     
         29 . The MEMS device as claimed in  claim 25 , wherein a performance selected from a group consisting of an airtightness, an optical performance, a magnetic performance, a mechanic performance, an acoustic performance, and an electronic performance of said MEMS device is obtained by testing said testing element with a measuring device.  
     
     
         30 . The MEMS device as claimed in  claim 25 , wherein said cover comprises a concavity for containing said actuating element and said testing element.