Composition for low dielectric material, low dielectric material and method for production thereof

Abstract

A low dielectric material is produced by using a composition including a borazine ring-containing compound and a compound represented by the following formula as a solvent, and/or by annealing a composition comprising a borazine ring-containing compound under atmosphere of oxygen concentration not higher than 0.1 vol % at 200 to 600° C. In the following formula, R a and R c independently represent alkyl group or acyl group; R b represents hydrogen atom or alkyl group; and n represents an integer of 1 to 5.

1 . A composition for low dielectric material, comprising: 
 a borazine ring-containing compound; and    a solvent represented by the following formula:                          wherein R a  and R c  independently represents alkyl group or acyl group; R b  represents hydrogen atom or alkyl group; and n represents an integer of 1 to 5.    
   
   
       2 . A composition for low dielectric material according to  claim 1 , wherein the borazine ring-containing compound is a compound represented by the following formula (1) or a polymer thereof:  
     
       
         
         
             
             
         
       
     
     wherein R 1 , R 3  and R 5  independently represents hydrogen atom, substituted or unsubstituted alkyl group, or a group represented by the following formula (2):  
     
       
         
         
             
             
         
       
     
     wherein R 7  is alkyl group; R 2 , R 4  and R 6  independently represents hydrogen atom, or alkyl group; and at least one of R 1  to R 6  is hydrogen atom.  
   
   
       3 . A low dielectric material obtainable by coating the composition of  claim 1  on a substrate.  
   
   
       4 . An interlayer dielectric film for semiconductor device obtainable by coating the composition of  claim 1  on a substrate.  
   
   
       5 . A semiconductor device having the interlayer dielectric film of  claim 4 .  
   
   
       6 . A method for production of low dielectric material, comprising a process of forming a coated membrane on a substrate by spin-coating a composition comprising a borazine ring-containing compound and a solvent represented by the following formula:  
     
       
         
         
             
             
         
       
     
     wherein R a  and R c  independently represents alkyl group or acyl group; R b  represents hydrogen atom or alkyl group; and n represents an integer of 1 to 5.  
   
   
       7 . A low dielectric material obtainable by annealing a composition comprising a borazine ring-containing compound under atmosphere of oxygen concentration not higher than 0.1 vol % at 200 to 600° C.  
   
   
       8 . A low dielectric material according to  claim 7 , wherein the borazine ring-containing compound is a compound represented by the following formula (1) or a polymer thereof:  
     
       
         
         
             
             
         
       
     
     wherein R 1 , R 3  and R 5  independently represents hydrogen atom, substituted or unsubstituted alkyl group, or a group represented by the following formula (2):  
     
       
         
         
             
             
         
       
     
     wherein R 7  is alkyl group; R 2 , R 4  and R 6  independently represents hydrogen atom, or alkyl group; and at least one of R 1  to R 6  is hydrogen atom.  
   
   
       9 . An interlayer dielectric film for semiconductor device, comprising the low dielectric material of  claim 8 .  
   
   
       10 . A semiconductor device having the interlayer dielectric film of  claim 9 .  
   
   
       11 . A method for production of a low dielectric material, comprising a process of annealing a composition comprising a borazine ring-containing compound under atmosphere of oxygen concentration not higher than 0.1 vol % at 200 to 600° C.