Inventor · disambiguated record
Hideharu Nobutoki
Also filed as: NOBUTOKI HIDEHARU
20 granted patents·8 pending applications·387 citations·filing 1993–2019
94Inventor score
Files withMITSUBISHI ELECTRIC CORP19KUMADA TERUHIKO4KAFUKU HIDETAKA1MITSUBISHI HEAVY IND LTD1NOBUTOKI HIDEHARU1
Top patents by PatentIndex Score
28 records- 0196US5500537AField-effect transistor with at least two different semiconductive organic channel compoundsMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Mar 19, 1996·243 cites·14 claims
- 0292US7175718B2Rare earth element permanent magnet materialMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Feb 13, 2007·43 cites·12 claims
- 0384US6924240B2Low dielectric constant material, insulating film comprising the low dielectric constant material, and semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Aug 2, 2005·24 cites·18 claims
- 0478US7192540B2Low dielectric constant material having thermal resistance, insulation film between semiconductor layers using the same, and semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2005·Granted Mar 20, 2007·6 cites·8 claims
- 0574US6458719B1Low dielectric constant film composed of boron, nitrogen, and hydrogen having thermal resistance, process for forming the film, use of the film between semiconductor device layers, and the device formed from the filmMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Oct 1, 2002·17 cites·8 claims
- 0670US8846148B2Composition for chemical vapor deposition film-formation and method for production of low dielectric constant filmKUMADA TERUHIKO·Filed 2006·Granted Sep 30, 2014·4 cites·4 claims
- 0766US8288294B2Insulating film for semiconductor device, process and apparatus for producing insulating film for semiconductor device, semiconductor device, and process for producing the semiconductor deviceKAFUKU HIDETAKA·Filed 2009·Granted Oct 16, 2012·4 cites·14 claims
- 0864US7029605B2Low dielectric constant material having thermal resistance, insulation film between semiconductor layers using the same, and semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Apr 18, 2006·9 cites·7 claims
- 0963US7671473B2Semiconductor device and method of fabricating the sameRENESAS TECH CORP·Filed 2006·Granted Mar 2, 2010·2 cites·20 claims
- 1060US8404314B2Plasma CVD apparatus, method for forming thin film and semiconductor deviceKUMADA TERUHIKO·Filed 2007·Granted Mar 26, 2013·1 cites·3 claims
- 1156US6086794AOrganic nonlinear optical material and nonlinear optical element using the sameMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jul 11, 2000·23 cites·8 claims
- 1254US11448471B2Heat storage unit, heat storage system, and heat storage methodMITSUBISHI ELECTRIC CORP·Filed 2018·Granted Sep 20, 2022·0 cites·15 claims
- 1354US7824784B2Composition for low dielectric material, low dielectric material and method for production thereofMITSUBISHI ELECTRIC CORP·Filed 2008·Granted Nov 2, 2010·0 cites·7 claims
- 1453US8674046B2Source material for preparing low dielectric constant materialNOBUTOKI HIDEHARU·Filed 2009·Granted Mar 18, 2014·0 cites·2 claims
- 1552US11814567B2Heat storage material, method of producing same, and heat storage tankMITSUBISHI ELECTRIC CORP·Filed 2019·Granted Nov 14, 2023·0 cites·8 claims
- 1651US7030007B2Via-filling material and process for fabricating semiconductor integrated circuit using the materialMITSUBISHI ELECTRIC CORP·Filed 2003·Granted Apr 18, 2006·3 cites·6 claims
- 1749US2005181628A1Process for preparing low dielectric constant materialMITSUBISHI ELECTRIC CORP·Filed 2005·Application pending·0 cites
- 1848US2013160711A1Plasma cvd apparatus, method for forming thin film and semiconductor deviceKUMADA TERUHIKO·Filed 2013·Application pending·0 cites
- 1948US2008029027A1Plasma Cvd DeviceMITSUBISHI ELECTRIC CORP·Filed 2005·Application pending·0 cites
- 2048US2008038585A1Process for Film Production and Semiconductor Device Utilizing Film Produced by the ProcessMITSUBISHI ELECTRIC CORP·Filed 2005·Application pending·0 cites
- 2145US7981790B2Semiconductor device and method of fabricating the sameRENESAS ELECTRONICS CORP·Filed 2010·Granted Jul 19, 2011·0 cites·6 claims
- 2245US6704663B2Method of calculating magnetic interaction of molecules using localized magnetic orbitalMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Mar 9, 2004·0 cites·6 claims
- 2345US2010181654A1Manufacturing method of semiconductor device, insulating film for semiconductor device, and manufacturing apparatus of the sameMITSUBISHI HEAVY IND LTD·Filed 2009·Application pending·0 cites
- 2445US2022259475A1Heat storage apparatusMITSUBISHI ELECTRIC CORP·Filed 2019·Application pending·0 cites
- 2542US5694343ASystem for simulating properties of a material having periodically repeated structureMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Dec 2, 1997·7 cites·3 claims
- 2639US2005282015A1Composition for low dielectric material, low dielectric material and method for production thereofKUMADA TERUHIKO·Filed 2004·Application pending·0 cites
- 2735US2002063338A1Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Application pending·0 cites
- 2829US5844820AMethod for simulating properties of material having periodically repeated structure and systems utilizing the sameMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Dec 1, 1998·1 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →