Process for Film Production and Semiconductor Device Utilizing Film Produced by the Process

Abstract

The present invention provides a method of manufacturing a film including the steps of using a compound with borazine skeleton (preferably a compound expressed by a chemical formula (1) below (where R 1 -R 6 may be identical with or different from each other, and are each independently selected from a group consisting of a hydrogen atom, and an alkyl group, an alkenyl group and an alkynyl group each having a carbon number of 1-4, on condition that at least one of R 1 -R 6 is not the hydrogen atom)) as a raw material, and forming the film on a substrate by using a chemical vapor deposition method, characterized in that a negative charge is applied to a site for placing the substrate, and a semiconductor device utilizing a film manufactured by the method. With the present invention, it is possible to provide a method of manufacturing a film, which method stably provides a low dielectric constant and a high mechanical strength over a long period of time, reduces the amount of a gas component (outgas) emitted in heating the film, and avoids any trouble in the device manufacturing process.

1 . A method of manufacturing a film, comprising the steps of: using a compound with borazine skeleton as a raw material; and forming the film on a substrate by using a chemical vapor deposition method, wherein a negative charge is applied to a site for placing said substrate.  
   
   
       2 . The method of manufacturing the film according to  claim 1 , wherein said compound with borazine skeleton is expressed by a chemical formula (1) below.  
     
       
         
         
             
             
         
       
     
     (In the formula, R 1 -R 6  may be identical with or different from each other, and are each independently selected from a group consisting of a hydrogen atom, and an alkyl group, an alkenyl group and an alkynyl group each having a carbon number of 1-4, on condition that at least one of R 1 -R 6  is not the hydrogen atom.)  
   
   
       3 . The method of manufacturing the film according to  claim 1 , wherein a plasma is used in combination during chemical vapor deposition.  
   
   
       4 . The method of manufacturing the film according to  claim 3 , wherein an ion and/or a radical of a raw material gas are/is generated by said plasma.  
   
   
       5 . A semiconductor device utilizing a film manufactured by the method cited in  claim 1 , said film being used as an interwire insulating material.  
   
   
       6 . A semiconductor device utilizing a film manufactured by the method cited in  claim 1 , said film being used as a protective film on an element.