Plasma cvd apparatus, method for forming thin film and semiconductor device

Abstract

A plasma CVD apparatus including a reaction chamber including an inlet for supplying a compound including a borazine skeleton, a feeding electrode, arranged within the reaction chamber, for supporting a substrate and being applied with a negative charge, and a plasma generating mechanism, arranged opposite to the feeding electrode via the substrate, for generating a plasma within the reaction chamber. A method forms a thin film wherein a thin film is formed by using a compound including a borazine skeleton as a raw material, and a semiconductor device includes a thin film formed by such a method as an insulating film. The apparatus and method enable to produce a thin film wherein low dielectric constant and high mechanical strength are stably maintained for a long time and insulating characteristics are secured.

1 . A plasma CVD apparatus supplied with a compound including a borazine skeleton and activating a film on a substrate by plasma induction to successively bond the borazine skeleton of said compound in reaction active state to said activated film on said substrate and polymerize the borazine skeleton to deposit a polymerized film including the borazine skeleton on said substrate, thereby forming the polymerized film including the borazine skeleton on said substrate, comprising:
 a reaction chamber including an inlet used for supplying said compound to a portion above said substrate;   a feeding electrode, arranged within said reaction chamber, for supporting said substrate with a temperature adjusted in a range from 50° C. or more to 400° C. or less and inducing plasma with a power of 3000 W or less using a first high frequency power supply and a first matching device to multiplex a negative charge; and   a winding coil, arranged outside of said reaction chamber to be opposite to said feeding electrode via said substrate, for exciting said compound introduced from said inlet,   wherein said winding coil is connected to a second high frequency power supply and a second matching device, and provides a uniform plasma field only in the portion above said substrate to be opposite to said feeding electrode using said second high frequency power supply and said second matching device so that said compound is brought into a reaction active state with the borazine skeleton being maintained therein, and   said feeding electrode selectively sweeps cations out of the borazine skeleton of said compound in reaction active state onto said substrate using said multiplexed negative charge.   
     
     
         2 . The plasma CVD apparatus according to  claim 1 , wherein the voltage applied to the feeding electrode is −600V to −200V and a power of the high frequency energy generated by the second high frequency power supply is 250 to 1500 W. 
     
     
         3 . The plasma CVD apparatus according to  claim 1 , wherein said compound having a borazine skeleton is indicated by the following Formula (1): 
       
         
           
           
               
               
           
         
       
       in which R 1  to R 6  are identical or different from one other, and respectively selected from the group consisting of a hydrogen atom, and an alkyl group, an alkenyl group and an alkynyl group each having carbon atoms of 1 to 4, independently, with at least one of R 1  to R 6  being not a hydrogen atom.