Hermetic chip in wafer form

Abstract

A fully hermetically sealed semiconductor chip and its method of manufacture. The semiconductor chip of the present invention is fully hermetically sealed on both sides and the edges thereof through the use of suitable coatings applied thereto, such as glass, to prevent an environmental attack of the semiconductor chip. The fully hermetically sealed semiconductor chip of the present invention does not require the use of a separate package for the hermetic sealing of the chip, thereby reducing the size of such a chip. The method of the manufacture of the semiconductor chip of the present invention provides a simple process for the fully hermetic sealing of both sides and the edges of the semiconductor chip without the use of a separate package.

1 . A portion of a semiconductor wafer having at least one semiconductor device thereon comprising: 
 a portion of a silicon semiconductor wafer having a first side, a second side and at least one street area forming an area on the portion of the silicon semiconductor wafer within which the at least one semiconductor device is located, the portion of the silicon semiconductor wafer having a portion thereof removed through a thickness thereof in the at least one street area;    a semiconductor device located on the first side of the portion of the silicon semiconductor wafer, the semiconductor device having a periphery having the at least one street area extending therefrom, the semiconductor device having at least one bond pad formed thereon, the semiconductor device formed on the portion of the silicon semiconductor wafer having portions of the silicon semiconductor wafer substrate removed from the at least one street area;    a first coating comprised of glass covering the first side of the portion of the silicon semiconductor wafer and the semiconductor device, the first coating sealingly engaging the first side of the portion of the silicon semiconductor wafer substrate, the first coating on the first side of the portion of a silicon semiconductor wafer covering the semiconductor device without substantially covering the at least one bond pad formed thereon;    a second coating comprising a removable glass material covering the second side of the portion of the silicon semiconductor wafer and substantially filling the portions of the silicon semiconductor wafer which have been removed, the second coating contacting the first coating in the portions of the silicon semiconductor wafer which have been removed, the second coating substantially sealingly engaging the periphery of the semiconductor device; and    a circuit connected to the at least one bond pad of the semiconductor device.    
     
     
         2 . A portion of a semiconductor wafer having at least two semiconductor devices formed thereon comprising: 
 a portion of a silicon semiconductor wafer substrate having a first side, a second side and a plurality of street areas thereon forming areas for a semiconductor device, the portion of the silicon semiconductor wafer substrate having portions removed;    at least two semiconductor devices formed on the first side of the portion of the silicon semiconductor wafer substrate, the at least two semiconductor devices each having a periphery having a street area of the plurality of street areas extending therefrom, the at least two semiconductor devices each having at least one bond pad formed thereon, the at least two semiconductor devices each formed on the portion of the silicon semiconductor wafer substrate having portions of the silicon semiconductor wafer substrate removed, the periphery of each of the at least two semiconductor devices formed by the portions of the silicon semiconductor wafer substrate removed;    a first coating comprised of a permanent glass material covering the first side of the portion of the silicon semiconductor wafer substrate and the at least two semiconductor devices formed on the first side of the portion of the silicon semiconductor wafer substrate, the first coating sealingly engaging the first side of the portion of the silicon semiconductor wafer substrate, the first coating on the first side of the portion of a silicon semiconductor wafer substrate covering the at least two semiconductor devices formed thereon without substantially covering the at least one bond pad formed thereon;    a second coating comprising a removable glass material covering the second side of the portion of the silicon semiconductor wafer substrate and substantially filling the portions of the silicon semiconductor wafer substrate which have been removed to separate areas of the portion of the silicon semiconductor wafer substrate from other areas thereof, the second coating contacting the first coating in the portions of the silicon semiconductor wafer substrate which have been removed, the second coating substantially sealingly engaging the periphery of each of the at least two semiconductor devices; and    a plurality of metal circuits connected to the at least one bond pad of each of the at least two semiconductor devices, the at least one metal circuit extending to a location adjacent the periphery of each of the at least two semiconductor devices, the plurality of metal circuits sealingly engaging the first coating on the portion of the silicon semiconductor wafer substrate and the at least one bond pad of each of the at least two semiconductor devices.    
     
     
         3 . The semiconductor wafer of  claim 2 , wherein: 
 the second coating comprises a glass coating which is etchable.    
     
     
         4 . The semiconductor wafer of  claim 2 , further comprising: 
 a plurality of metal circuits located on the first coating on the first side of the portion of the silicon semiconductor wafer substrate.