Electronic component packaging

Abstract

One embodiment of an electronic component packaging system includes a base adapted for supporting an electronic component and including a mechanically planarized sealing surface, and a lid including a mechanically planarized sealing surface sealed to the planarized sealing surface of the base so as to define a hermetic seal therebetween.

1 . An electronic component packaging system, comprising: 
 a base adapted for supporting an electronic component and including a mechanically planarized sealing surface; and    a lid including a mechanically planarized sealing surface sealed to said planarized sealing surface of said base so as to define a hermetic seal therebetween.    
     
     
         2 . The system of  claim 1  wherein said hermetic seal comprises covalent bonding.  
     
     
         3 . The system of  claim 1  further comprising a non-solder bonding layer positioned between said planarized sealing surface of said base and said planarized sealing surface of said lid.  
     
     
         4 . The system of  claim 1  wherein said lid and said base are each chosen from one of a metal, a metal alloy, ceramic, plastic, silicon, and glass.  
     
     
         5 . The system of  claim 1  wherein said hermetic seal is created with a hydration enhanced bonding process.  
     
     
         6 . The system of  claim 1  wherein said electronic component is a MEMS die.  
     
     
         7 . The system of  claim 1  wherein said planarized sealing surface of said base and said planarized sealing surface of said lid each have a smoothness of at most a 20 Angstroms rms surface roughness over a 2 micrometer by 2 micrometer area.  
     
     
         8 . The system of  claim 3  wherein said bonding layer is chosen from one of oxide, glass frit, and amorphous silicon.  
     
     
         9 . The system of  claim 1  wherein said hermetic seal is created with a plasma enhanced bonding process.  
     
     
         10 . The system of  claim 1  wherein said base and said lid hermetically seal said electronic component.  
     
     
         11 . The system of  claim 1  wherein said planarized sealing surface of said base extends around a perimeter of said base and said planarized sealing surface of said lid extends around a perimeter of said lid, and wherein said perimeter of said base substantially mates in size and shape with said perimeter of said lid.  
     
     
         12 . A process of plasma bonding an electronic component package, comprising: 
 activating an electronic component container sealing surface and a lid sealing surface with a plasma; and    contacting the electronic component container sealing surface and the lid sealing surface to form a hermetic seal.    
     
     
         13 . The process of  claim 12  further comprising, prior to said activating, depositing a bonding layer on said electronic component container sealing surface.  
     
     
         14 . The process of  claim 12  further comprising, prior to said activating, polishing said electronic component container sealing surface.  
     
     
         15 . The process of  claim 12  further comprising, prior to said activating, attaching said electronic component to said electronic component container.  
     
     
         16 . The process of  claim 12  further comprising, prior to said activating, depositing a bonding layer on said lid sealing surface.  
     
     
         17 . The process of  claim 12  further comprising, prior to said activating, polishing said lid sealing surface.  
     
     
         18 . The process of  claim 12  wherein said contacting is conducted at a temperature of less than 200 degrees Celsius.  
     
     
         19 . The process of  claim 12  wherein said plasma is chosen from one of nitrogen, oxygen, argon and a mixture thereof.  
     
     
         20 . The process of  claim 14  wherein said polishing said electronic component container sealing surface is conducted to a smoothness of at most 20 Angstroms rms surface roughness over a 2 micrometer by 2 micrometer area.  
     
     
         21 . The process of  claim 17  wherein said polishing said lid sealing surface is conducted to a smoothness of at most 20 Angstroms rms surface roughness over a 2 micrometer by 2 micrometer area.  
     
     
         22 . The process of  claim 14  wherein said polishing is conducted with a slurry on a polishing wheel.  
     
     
         23 . The process of  claim 17  wherein said polishing is conducted with a slurry on a polishing wheel.  
     
     
         24 . The process of  claim 12  further comprising, prior to said activating, attaching an electronic component to said electronic component container.  
     
     
         25 . The process of  claim 12  wherein said process is conducted at atmospheric pressure.  
     
     
         26 . The process of  claim 12  wherein said process is conducted in a vacuum.  
     
     
         27 . The process of  claim 2  further comprising, prior to said contacting, hydrating at leas one of said container sealing surface and said lid sealing surface with a water plasma.  
     
     
         28 . An electronic component package, comprising: 
 a lid;    a container adapted for supporting an electronic component; and    a non-solder bonding layer that bonds said lid and said container together.    
     
     
         29 . The package of  claim 28  wherein said bonding layer defines a hermetic seal between said lid and said container.  
     
     
         30 . The package of  claim 28  wherein said bonding layer comprises a non-organic and a non-epoxy material.  
     
     
         31 . The package of  claim 28  wherein said lid and said container are each chosen from one of a metal, a metal alloy, ceramic, plastic, silicon, and glass.  
     
     
         32 . The package of  claim 28  further comprising an electronic die sealed between said lid and said container.  
     
     
         33 . The package of  claim 28  wherein said non-solder bonding layer includes a planarized bonding surface.  
     
     
         34 . The package of  claim 28  wherein said bonding layer is plasma activated prior to bonding said lid and said container together, said plasma activation chosen from one of activation inside a plasma chamber and activation under ambient plasma conditions.  
     
     
         35 . The package of  claim 28  wherein said bonding layer is hydrated prior to bonding said lid and said container together, wherein said hydration is chosen from one of hydration in deionized water and hydration in a water plasma.  
     
     
         36 . The package of  claim 28  wherein said bonding layer is chosen from one of oxide, glass frit, and amorphous silicon.  
     
     
         37 . A process of sealing an electronic component package, comprising: 
 contacting a sealing surface of a first package structure to a sealing surface of a second package structure at a temperature of less than 200 degrees Celsius so as to form a hermetic seal between said first and second package structures.    
     
     
         38 . The process of  claim 37  further comprising, prior to said contacting, hydrating one of said sealing surface of said first package structure and said sealing surface of said second package structure.  
     
     
         39 . The process of  claim 37  further comprising, prior to said contacting, plasma activating said sealing surface of said first package structure and said sealing surface of said second package structure.  
     
     
         40 . The process of  claim 37  further comprising, prior to said contacting, polishing said sealing surface of said first package structure and said sealing surface of said second package structure.  
     
     
         41 . The process of  claim 37  wherein said sealing surface of said first package structure comprises an exposed surface of a bonding material on said first package structure.  
     
     
         42 . The process of  claim 37  wherein said process is conducted at a temperature of at most 100 degrees Celsius.  
     
     
         43 . The process of  claim 37  wherein said hermetic seal comprises covalent bonding.  
     
     
         44 . A method of sealing an electronic package, comprising: 
 applying a sealing material to at least one of a cap and a base;    mechanically planarizing a mating surface of said cap and a mating surface of said base; and    contacting said mating surface of said cap and said mating surface of said base such that said sealing material seals said cap and said base together.    
     
     
         45 . The method of  claim 44  wherein said sealing material is positioned on said cap and wherein said mating surface of said cap comprises an exposed surface of said sealing material on said cap.  
     
     
         46 . The method of  claim 44  wherein said sealing material is positioned on said base and wherein said mating surface of said base comprises an exposed surface of said sealing material on said base.  
     
     
         47 . The method of  claim 44  wherein said sealing material is a non-epoxy, non-solder, non-organic material.  
     
     
         48 . The method of  claim 44  wherein said cap and said base are hermetically sealed together.  
     
     
         49 . The method of  claim 44  wherein said process takes place at atmospheric pressure and ambient temperature.  
     
     
         50 . The method of  claim 44  further comprising, prior to said contacting, plasma activating said mating surface of said cap and said mating surface of said base.  
     
     
         51 . The method of  claim 44  further comprising, prior to said contacting, hydrating at least one of said mating surface of said cap and said mating surface of said base.  
     
     
         52 . An electronic device package, comprising: 
 means for mounting an electronic device; and    means for capping said means for mounting, said means for capping hermetically sealed to said means for mounting by a plasma activated seal.