Integrated system for processing semiconductor wafers

Abstract

An integrated system for processing a plurality of wafers, having a conductive front surface, is provided. The system includes a plurality of processing subsystems for depositing on or removing metal from the front surfaces of the wafers. Each processing subsystem includes a process chamber and a cleaning chamber. The system also has a wafer handling subsystem for transporting each of the wafers into or out of the appropriate one of the plurality of processing subsystems. The plurality of processing subsystems and wafer handling subsystem form an integrated system.

1 . An integrated system for processing a plurality of wafers, each wafer including a conductive surface, the system comprising: 
 a plurality of process stations, wherein the plurality comprises at least one material deposition chamber and at least one material removal chamber, wherein the at least one material deposition chamber is configured to deposit material onto the conductive surface of the wafer and the at least one material removal chamber is configured to remove material from the conductive surface of the wafer, each of the process stations including a cleaning chamber for removing residues that accumulate on the wafer during prior usage of the process station, wherein the material deposition chambers and the cleaning chambers are vertically stacked and the material removal chambers and cleaning chambers are vertically stacked; and    a wafer-handling subsystem for transporting the wafer into or out of the plurality of process chambers and into or out of a wafer holding system.    
   
   
       2 . The system of  claim 1 , wherein the material deposition chamber includes at least one of an electrochemical deposition chamber and an electrochemical mechanical deposition chamber.  
   
   
       3 . The system of  claim 1 , wherein the material removal chamber includes at least one of an electrochemical polishing chamber and a chemical mechanical polishing chamber.  
   
   
       4 . The system of  claim 1 , further comprising an anneal chamber.  
   
   
       5 . The system of  claim 1 , wherein each of the process stations is disposed in a cluster arrangement adjacent the wafer-handling subsystem.  
   
   
       6 . The system of  claim 5 , wherein the wafer-handling subsystem includes at least one wafer-handling robot.  
   
   
       7 . The system of  claim 1 , wherein the wafer-handling subsystem includes first and second wafer-handling robots, wherein: 
 the first wafer-handling robot is configured to remove each wafer from a cassette and place the wafer in a buffer, and subsequently remove each wafer from the buffer and replace the wafer in the cassette; and    the second wafer-handling robot is configured to remove each wafer from the buffer and place the wafer in one of the plurality of process stations, and subsequently remove each wafer from the one of the plurality of process stations and replace the wafer in the buffer.    
   
   
       8 . An integrated system for processing a plurality of wafers, wherein each wafer has a conductive front surface, the system comprising: 
 a plurality of processing subsystems comprising at least one first processing subsystem and at least one second processing subsystem, wherein:    the first processing subsystem comprises a first process chamber configured to deposit a conductor on the conductive front surface of each wafer and a first cleaning chamber disposed vertically with respect to the first process chamber, the cleaning chamber configured to remove residues that accumulate on the wafer during prior usage of the first process chamber; and    the second processing subsystem comprises a second process chamber configured to remove a portion of the conductor on the conductive front surface of each wafer and a second cleaning chamber disposed vertically with respect to the second process chamber configured to remove residues that accumulate on the wafer during prior usage of the second process chamber; and    a wafer handling subsystem configured to transport the wafer into or out of the plurality of processing subsystems and into or out of a wafer-holding system.    
   
   
       9 . The system of  claim 8 , wherein the first processing subsystem includes an electrochemical deposition chamber and the second processing subsystem includes a chemical mechanical polishing chamber.  
   
   
       10 . The system of  claim 8 , wherein the first processing subsystem includes an electrochemical deposition chamber and the second processing subsystem includes an electrochemical polishing chamber.  
   
   
       11 . The system of  claim 8 , wherein the first processing subsystem includes an electrochemical mechanical deposition chamber and the second processing subsystem includes a chemical mechanical polishing chamber.  
   
   
       12 . The system of  claim 8 , wherein the first processing subsystem includes an electrochemical mechanical deposition chamber and the second processing subsystem includes an electrochemical polishing chamber.  
   
   
       13 . The system of  claim 8 , wherein each of the plurality of process subsystems is disposed in a cluster arrangement adjacent the wafer-handling subsystem.  
   
   
       14 . The system according to  claim 8 , wherein the first cleaning chamber is configured to remove a portion of the conductor deposited near an edge of the wafer.  
   
   
       15 . The system of  claim 8 , wherein the wafer-handling subsystem only handles wafers that are dry and includes first and second wafer-handling robots, wherein: 
 the first wafer-handling robot is configured to remove each wafer from a cassette and place the wafer in a buffer, and subsequently remove each wafer from the buffer and replace the wafer in the cassette; and    the second wafer-handling robot is configured to remove each wafer from the buffer and place the wafer in one of the plurality of process subsystems, and subsequently remove each wafer from the one of the plurality of process subsystems and replace the wafer in the buffer.    
   
   
       16 . The system of  claim 8 , further comprising an anneal chamber.  
   
   
       17 . An integrated system for processing a plurality of wafers, each wafer including a conductive surface, the system comprising: 
 a plurality of deposition chambers and removal chambers, wherein the deposition chambers are configured to deposit material onto the conductive surface of the wafer and the removal chambers are configured to remove material from the conductive surface of the wafer, each of the deposition and removal chambers including a cleaning chamber for removing residues on the wafer, wherein each cleaning chamber and the corresponding deposition chamber or removal chamber are vertically stacked; and    a wafer-handling subsystem for transporting the wafer into or out of the plurality of deposition and removal chambers and into or out of a wafer-holding system.    
   
   
       18 . The system of  claim 17 , wherein each of the deposition chambers includes at least one of an electrochemical deposition chamber and an electrochemical mechanical deposition chamber.  
   
   
       19 . The system of  claim 17 , wherein each of the removal chambers includes at least one of an electrochemical polishing chamber and a chemical mechanical polishing chamber.  
   
   
       20 . The system of  claim 17 , further comprising an anneal chamber.