Chemical mechanical polish with multi-zone abrasive-containing matrix

Abstract

Chemical mechanical polish (CMP) devices, CMP systems, methods of CMP, and methods of manufacturing CMP devices. A CMP device comprises a plurality of zones, with each zone having a matrix of fixed abrasive features disposed therein. The abrasive-containing matrix within each zone has material removal properties that differ from the material removal properties of the abrasive-containing matrixes of the other zones. The material removal property differences of the abrasive-containing matrixes of the zones may achieved by using different abrasive materials, densities, heights, or shapes, or combinations thereof, of the fixed abrasive features within the zones, or by using physical or chemical conditioning. When the novel CMP device is used to planarize a semiconductor wafer, a substantially planar surface with an improved CMP profile results.

1 . A chemical mechanical polish (CMP) device for planarizing a semiconductor wafer, the CMP device comprising: 
 a first zone, the first zone comprising a first material removal property; and    at least one second zone, the at least one second zone comprising a second material removal property, wherein the second material removal property is different than the first material removal property.    
     
     
         2 . The CMP device according to  claim 1 , wherein the first zone comprises a plurality of first fixed abrasive features, and wherein the at least one second zone comprises a plurality of second fixed abrasive features.  
     
     
         3 . The CMP device according to  claim 2 , wherein the plurality of first fixed abrasive features comprise a first matrix, and wherein the plurality of second fixed abrasive features comprise a second matrix.  
     
     
         4 . The CMP device according to  claim 2 , wherein the plurality of first fixed abrasive features comprise a first material, and wherein the plurality of second fixed abrasive features comprise a second material, wherein the second material is different than the first material.  
     
     
         5 . The CMP device according to  claim 4 , wherein the first material and the second material comprise ceria oxide, silicon oxide, or aluminum oxide.  
     
     
         6 . The CMP device according to  claim 2 , wherein the plurality of first fixed abrasive features comprises a first height, and wherein the plurality of second fixed abrasive features comprises a second height, wherein the second height is different than the first height.  
     
     
         7 . The CMP device according to  claim 6 , wherein the first height and the second height comprise about 60 μm or less.  
     
     
         8 . The CMP device according to  claim 6 , wherein the difference between the second height and the first height is between about 5 to 25 μm.  
     
     
         9 . The CMP device according to  claim 6 , further comprising a spacer disposed beneath the at least one second zone, wherein the spacer increases the second height of the second fixed abrasive features so that the second height is different from the first height.  
     
     
         10 . The CMP device according to  claim 2 , wherein the plurality of first fixed abrasive features comprises a first density, wherein the plurality of second fixed abrasive features comprises a second density, the second density being different from the first density.  
     
     
         11 . The CMP device according to  claim 10 , wherein each of the plurality of first fixed abrasive features is spaced apart from every other first fixed abrasive feature by at least a first distance, wherein each of the plurality of second fixed abrasive features is spaced apart from every second fixed abrasive feature by at least a second distance, the second distance being greater than the first distance.  
     
     
         12 . The CMP device according to  claim 2 , wherein the plurality of first fixed abrasive features comprises a first shape, wherein the plurality of second fixed abrasive features comprises a second shape, wherein the second shape is different than the first shape.  
     
     
         13 . The CMP device according to  claim 12 , wherein the first shape or the second shape comprises a cylindrical pillar, a cone, a three dimensional structure having an oval, circular, trapezoidal, hexagonal, octagonal, star-shaped, rectangular, or square base, with a rounded or unrounded top surface.  
     
     
         14 . The CMP device according to  claim 2 , wherein the plurality of first abrasive features in the first zone and the plurality of second abrasive features in the second zone comprise different materials, densities, heights, shapes, or combinations thereof.  
     
     
         15 . The CMP device according to  claim 2 , wherein the plurality of second fixed abrasive features is adapted to remove material from the semiconductor wafer at a different rate than the plurality of first fixed abrasive features in the first zone.  
     
     
         16 . The CMP device according to  claim 1 , wherein the first zone and the at least one second zone are disposed on a circular polishing pad or a belt polishing pad.  
     
     
         17 . The CMP device according to  claim 1 , wherein the at least one second zone is disposed annularly about the first zone on the polishing pad.  
     
     
         18 . A chemical mechanical polish (CMP) system including the CMP device according to  claim 1 .  
     
     
         19 . The CMP system according to  claim 18 , further comprising: 
 a support for the semiconductor wafer;    means for moving the semiconductor wafer support; and    means for moving the CMP device proximate the semiconductor wafer to polish the semiconductor wafer.    
     
     
         20 . The CMP system according to  claim 18 , wherein the plurality of first abrasive features in the first zone of the CMP device and the plurality of second abrasive features in the second zone of the CMP device comprise different materials, densities, heights, shapes, or combinations thereof.  
     
     
         21 . A method of planarizing a top surface of a semiconductor wafer, the method comprising: 
 providing a chemical mechanical polish (CMP) device, the CMP device comprising a first zone, the first zone comprising a first material removal property, and at least one second zone, the at least one second zone comprising a second material removal property, wherein the second material removal property is different than the first material removal property;    providing a semiconductor wafer, the semiconductor wafer having a top surface; and    polishing the top surface of the semiconductor wafer with the CMP device.    
     
     
         22 . The method according to  claim 21 , wherein providing the CMP device comprises providing a CMP device having a plurality of first abrasive features in the first zone, and a plurality of second abrasive features in the at least one second zone.  
     
     
         23 . The method according to  claim 22 , wherein the at least one second zone is disposed annularly about the first zone on the polishing pad, wherein the at least one second zone is more abrasive than the first zone, wherein the semiconductor wafer top surface includes edge regions and a central region, further comprising polishing the edge regions, but not the central region, of the semiconductor wafer top surface with the at least one second zone.  
     
     
         24 . The method according to  claim 22 , wherein the providing the CMP device comprises providing a CMP device wherein the plurality of first abrasive features in the first zone and the plurality of second abrasive features in the second zone comprise different materials, densities, heights, shapes, or combinations thereof.  
     
     
         25 . A method of manufacturing a chemical mechanical process (CMP) device, the method comprising: 
 providing a backing material;    attaching a plurality of first fixed abrasive features to the backing material in a first zone, the first zone comprising a first material removal property; and    attaching a plurality of second fixed abrasive features to the backing material in at least one second zone, the at least one second zone comprising a second material removal property, wherein the second material removal property is different than the first material removal property.    
     
     
         26 . The method according to  claim 28 , wherein attaching the plurality of first abrasive features in the first zone and the plurality of second abrasive features in the second zone comprise attaching second abrasive features having different materials, densities, heights, shapes, or combinations thereof, than the first abrasive features.  
     
     
         27 . The method according to  claim 25 , further comprising inducing the difference in the second material removal property and the first material removal property by physical conditioning.  
     
     
         28 . The method according to  claim 27 , wherein the physical conditioning comprises condition with a grid with embedded diamonds, a bristle brush, sonic-waves, high energy light, or a water jet.  
     
     
         29 . The method according to  claim 25 , further comprising inducing the difference in the second material removal property and the first material removal property by chemical conditioning.  
     
     
         30 . The method according to  claim 29 , wherein the chemical conditioning comprises using an oxidizing chemical, a reducing chemical, a chemical adapted to alter an adhesive used to attach the plurality of first fixed abrasive features or the plurality of second fixed abrasive features to the backing material, a chemical adapted to alter the first fixed abrasive features or the second fixed abrasive features, or a chemical adapted to alter a byproduct formed during the use of the CMP device to planarize a semiconductor wafer.  
     
     
         31 . The method according to  claim 30 , wherein the chemical conditioning comprises using aliphatic alcohol, buffered hydrofluoric acid, a complexing agent or citric acid.