Semiconductor interconnect having dome shaped conductive spring contacts

Abstract

An interconnect for testing a semiconductor component includes a substrate, and interconnect contacts on the substrate configured to electrically engage component contacts on a semiconductor component. Each interconnect contact includes a compliant conductive layer formed as a conductive spring element. In addition, the complaint conductive layer includes a tip for engaging the component contact and a spring segment portion for resiliently supporting the tip. A method for fabricating the interconnect includes the steps of shaping the substrate, forming a conductive layer on a shaped portion of the substrate and removing at least some of the shaped portion. The shaped portion can comprise a raised step or dome, or a shaped recess in the substrate. The conductive layer can comprise a metal, a conductive polymer or a polymer tape can include a penetrating structure or penetrating particles. The interconnect can be used to construct wafer level test systems, and die level test systems as well, for semiconductor components such as wafers, dice and packages.

1 . An interconnect for a semiconductor component having a plurality of component contacts comprising: 
 a substrate; and    a plurality of interconnect contacts on the substrate configured to electrically engage the component contacts, each interconnect contact comprising a compliant conductive layer having a dome shape and a hollow, substantially enclosed, interior portion, the layer having a base portion on the substrate and a tip portion for contacting a component contact.    
   
   
       2 . The interconnect of  claim 1  wherein the component is contained on a semiconductor wafer containing a plurality of components and the interconnect contacts are configured to electrically engage all of the component contacts on the wafer.  
   
   
       3 . The interconnect of  claim 1  wherein the compliant conductive layer includes an opening to the interior portion.  
   
   
       4 . The interconnect of  claim 1  wherein the compliant conductive layer comprises a metal.  
   
   
       5 . The interconnect of  claim 1  wherein the compliant conductive layer comprises a polymer tape having a polymer substrate and a conductive layer on the polymer substrate.  
   
   
       6 . The interconnect of  claim 1  wherein the compliant conductive layer comprises a conductive polymer comprising a plurality of particles configured to penetrate the component contact.  
   
   
       7 . The interconnect of  claim 1  wherein the tip portion has an enclosed spring shape.  
   
   
       8 . An interconnect for a semiconductor component having a plurality of component contacts comprising: 
 a substrate; and    a plurality of interconnect contacts on the substrate configured to electrically engage the component contacts, each interconnect contact comprising a compliant conductive layer having a hollow, substantially enclosed, interior portion, the layer having a base portion on the substrate and a tip portion configured to electrically engage a component contact and to move independently on the substrate.    
   
   
       9 . The interconnect of  claim 8  wherein the component is contained on a semiconductor wafer comprising a plurality of components.  
   
   
       10 . The interconnect of  claim 8  wherein the component comprises a semiconductor package and the component contacts comprise bumps.  
   
   
       11 . The interconnect of  claim 8  wherein the component contacts comprise planar pads.  
   
   
       12 . The interconnect of  claim 8  wherein the component comprises a semiconductor die or a semiconductor package contained on a wafer.  
   
   
       13 . The interconnect of  claim 8  wherein the substrate comprises a material selected from the group consisting of a semiconductor material, a plastic material and a ceramic.  
   
   
       14 . The interconnect of  claim 8  wherein the compliant conductive layer has a dome shape.  
   
   
       15 . An interconnect for a semiconductor component having a plurality of component contacts comprising: 
 a substrate; and    a plurality of interconnect contacts on the substrate configured to electrically engage the component contacts, each interconnect contact comprising a compliant conductive layer having a base portion on the substrate and a dome shaped tip portion on the base portion configured to move independently on the substrate to electrically contact a component contact.    
   
   
       16 . The interconnect of  claim 15  wherein the compliant conductive layer comprises a metal.  
   
   
       17 . The interconnect of  claim 15  wherein the compliant conductive layer comprises a polymer tape having a polymer substrate and a conductive layer on the polymer substrate.  
   
   
       18 . The interconnect of  claim 15  wherein the compliant conductive layer comprises a conductive polymer comprising a plurality of particles configured to penetrate the component contact.  
   
   
       19 . The interconnect of  claim 15  wherein the component comprises a semiconductor die and the interconnect is configured for use with a carrier configured to contain the die.  
   
   
       20 . The interconnect of  claim 15  wherein the component comprises a semiconductor wafer and the interconnect is configured for use with a wafer prober.