Substrate processing apparatus

Abstract

A substrate treating apparatus comprises a reaction chamber 6 forming a space for treating a substrate 7 , and a gas reserving part 10 connected to the reaction chamber 6 , having a gas supply pipe for supplying gas for treating the substrate 7 and a gas exhaust pipe for exhausting the gas inside the reaction chamber 6 and reserving gas supplied to the reaction chamber 6 , and reserving the gas to be supplied to the reaction chamber 6 midway in the gas supply pipe, and a bypass line 11 bypassing the gas reserving part 10 , the gas receiving part 10 being arranged parallel with the bypass line, and a control part 60 supplying the treating gas to the reaction chamber 6 by using either of the gas reserving part 10 and the bypass line 11 when the substrate 7 is treated.

1 . An apparatus characterized by comprising a reaction chamber forming a space in which a substrate is to be processed, a gas supply pipe which is connected to said reaction chamber and which supplies processing gas for said substrate, and a gas exhaust pipe for exhausting an inside of said reaction chamber, wherein 
 a gas reservoir for storing gas to be supplied to said reaction chamber and a bypass line which bypasses said gas reservoir are juxtaposed to each other in a portion of said gas supply pipe, and    said substrate processing apparatus further comprises a control unit which allows the processing gas to be supplied to said reaction chamber using one of said gas reservoir and said bypass line when said substrate is processed.