Chemical mechanical polishing compositions for metal and associated materials and method of using same

Abstract

A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.

1 .- 50 . (canceled)  
   
   
       51 . A chemical mechanical polishing slurry comprising an abrasive that consists essentially of organic polymer, wherein said slurry is adapted for chemical mechanical polishing.  
   
   
       52 . The chemical mechanical polishing slurry of  claim 51 , further comprising an oxidizing agent.  
   
   
       53 . The chemical mechanical polishing slurry of  claim 52 , wherein said oxidizing agent comprises a species selected from the group consisting of hydrogen peroxide, iodic acid, potassium iodate, ferric nitrate, ammonium chlorite, ammonium chlorate, ammonium iodate, ammonium perborate, ammonium perchlorate, ammonium periodate ammonium persulfate, tetramethylammonium chlorite, tetramethylammonium chlorate, tetramethylammonium iodate, tetramethylammonium perborate, tetramethylammonium perchlorate, tetramethylammonium periodate, tetramethylammonium persulfate, 4- methylmorpholine N-oxide, pyridine-N-oxide, and urea.  
   
   
       54 . The chemical mechanical polishing slurry according to  claim 51 , wherein the organic polymer comprises poly (methyl methacrylate).  
   
   
       55 . The chemical mechanical polishing slurry according to  claim 51 , wherein the organic polymer further comprises a polymeric material selected from the group consisting of a poly(styrene), a poly(ether), a poly(siloxane), a poly(vinyl acetate), a poly (vinyl alcohol), a poly(vinylbenzene), substituted versions, and mixtures thereof.  
   
   
       56 . The chemical-mechanical polishing slurry according to  claim 51 , wherein said abrasive has a particle size distribution in a range of from about 10 to 75 nm.  
   
   
       57 . The chemical mechanical polishing slurry according to  claim 51 , further comprising an activating agent.  
   
   
       58 . The chemical mechanical polishing slurry according to  claim 57 , wherein the activating agent comprises an acid selected from the group consisting of phosphoric acid, iodic acid, citric acid, and malonic acid.  
   
   
       59 . The chemical mechanical polishing slurry according to  claim 51 , further comprising from about 0.1 to 2 percent surfactant.  
   
   
       60 . The chemical mechanical polishing slurry according to  claim 59 , wherein said surfactant is selected from the group consisting of non-ionic, cationic and anionic.  
   
   
       61 . The chemical mechanical polishing slurry according to  claim 51 , further comprising a passivating agent.  
   
   
       62 . The chemical mechanical polishing slurry according to  claim 51 , further comprising a complexing agent.  
   
   
       63 . The chemical mechanical polishing slurry according to  claim 51 , having a pH in a range of from about 0.1 to 6.9.  
   
   
       64 . The chemical mechanical polishing slurry according to  claim 61 , wherein the passivating agent comprises a species selected from the group consisting of glycine, oxalic acid, malonic acid, succinic acid, iminodiacetic acid, benzotriazole, and nitrilotriacetic acid.  
   
   
       65 . A chemical mechanical polishing slurry, said slurry comprising an abrasive that consists of organic polymer having a particle size distribution in a range of from about 10 to 75 nm.  
   
   
       66 . The chemical mechanical polishing slurry of  claim 65 , wherein the organic polymer comprises poly (methyl methacrylate).  
   
   
       67 . A method for chemical mechanical polishing a semiconductor wafer substrate, said method comprising the steps of: 
 a) chemical mechanical polishing a semiconductor wafer substrate surface with the chemical mechanical polishing slurry of  claim 51;  and    b) chemical mechanical polishing said semiconductor wafer substrate surface with a second slurry, wherein said second slurry has a higher removal rate on barrier material than on copper material compared to said first chemical mechanical polishing slurry.    
   
   
       68 . A method for chemical mechanical polishing a semiconductor wafer substrate, said method comprising chemical mechanical polishing copper material from the semiconductor wafer substrate surface using the chemical mechanical polishing slurry of  claim 51 .  
   
   
       69 . A method for chemical mechanical polishing a semiconductor wafer substrate comprising: 
 a) chemical mechanical polishing a semiconductor wafer substrate surface with the chemical mechanical polishing slurry of  claim 65;  and    b) chemical mechanical polishing said semiconductor wafer substrate surface with a second slurry, wherein said second slurry has a higher removal rate on barrier material than copper material.    
   
   
       70 . A method for chemical mechanical polishing a semiconductor wafer substrate, said method comprising chemical mechanical polishing copper material from the semiconductor wafer substrate surface with the chemical mechanical polishing slurry of  claim 65.