Rotating body dynamic quantity measuring device and system

Abstract

A single crystal semiconductor including a Wheatstone bridge circuit formed of an impurity diffusion layer whose longitudinal direction is aligned with a particular crystal orientation is connected to a rotating body. A rotating body dynamic quantity measuring device and a system using the measuring device are fatigue- and corrosion-resistant because of the single crystal semiconductor used and are not easily affected by temperature variations because of the bridge circuit considering a single crystal anisotropy.

1 . A rotating body dynamic quantity measuring device comprising: 
 a Wheatstone bridge circuit formed on an element forming surface, namely, a main surface of a single crystal semiconductor substrate, the Wheatstone bridge circuit being constructed of resistors of a p-type impurity diffusion layer;    wherein the resistors are so arranged that lines connecting ends of each of half the resistors making up the Wheatstone bridge circuit lie nearly in the same direction as a <110> direction of the single crystal semiconductor and intersect those lines connecting ends of each of the remaining half of the resistors making up the Wheatstone bridge circuit at an angle of between 45 degrees and 135 degrees;    wherein, on a back of the single crystal semiconductor substrate opposite the element forming surface, there is no hole greater in width than a shorter side of the p-type impurity diffusion layer forming the Wheatstone bridge circuit.    
   
   
       2 . A rotating body dynamic quantity measuring device comprising: 
 a Wheatstone bridge circuit formed on an element forming surface, namely, a main surface of a single crystal semiconductor substrate, the Wheatstone bridge circuit being constructed of resistors of a n-type impurity diffusion layer;    wherein the resistors are so arranged that lines connecting ends of each of half the resistors making up the Wheatstone bridge circuit lie nearly in the same direction as a <100> direction of the single crystal semiconductor and intersect those lines connecting ends of each of the remaining half of the resistors making up the Wheatstone bridge circuit at an angle of between 45 degrees and 135 degrees;    wherein, on a back of the single crystal semiconductor substrate opposite the element forming surface, there is no hole greater in width than a shorter side of the n-type impurity diffusion layer forming the Wheatstone bridge circuit.    
   
   
       3 . A rotating body dynamic quantity measuring device according to  claim 1 , further including: 
 an amplification conversion circuit to amplify signals from the Wheatstone bridge circuit and convert them into digital signals;    a transmission circuit to transmit the converted digital signals to an outside of the semiconductor substrate; and    a power supply circuit to supply as electricity an electromagnetic wave energy received from outside the semiconductor substrate.    
   
   
       4 . A rotating body dynamic quantity measuring device according to  claim 2 , further including: 
 an amplification conversion circuit to amplify signals from the Wheatstone bridge circuit and convert them into digital signals;    a transmission circuit to transmit the converted digital signals to an outside of the semiconductor substrate; and    a power supply circuit to supply as electricity an electromagnetic wave energy received from outside the semiconductor substrate.    
   
   
       5 . A rotating body dynamic quantity measuring device according to  claim 1 , further including: 
 a conversion circuit to amplify signals from the Wheatstone bridge circuit and convert them into digital signals;    a transmission circuit to transmit the converted digital signals to an outside of the semiconductor substrate; and    a power supply circuit to supply electricity to these circuits, the electricity being derived from at least one of a sunlight, a temperature difference, an induced electromotive force and a battery received from outside the semiconductor substrate.    
   
   
       6 . A rotating body dynamic quantity measuring device according to  claim 2 , further including: 
 a conversion circuit to amplify signals from the Wheatstone bridge circuit and convert them into digital signals;    a transmission circuit to transmit the converted digital signals to an outside of the semiconductor substrate; and    a power supply circuit to supply electricity to these circuits, the electricity being derived from at least one of a sunlight, a temperature difference, an induced electromotive force and a battery received from outside the semiconductor substrate.    
   
   
       7 . A rotating body dynamic quantity measuring device according to  claim 1 , wherein the impurity diffusion layer is configured and arranged in nearly a four-time symmetry.  
   
   
       8 . A rotating body dynamic quantity measuring device according to  claim 1 , wherein the impurity diffusion layer is configured and arranged in nearly a mirror symmetry.  
   
   
       9 . A rotating body dynamic quantity measuring device according to  claim 1 , wherein a visible marking representing an axial direction or circumferential direction of a rotating shaft is provided on the element forming surface of the semiconductor substrate.  
   
   
       10 . A rotating body dynamic quantity measuring device according to  claim 1 , wherein a bonding portion to be attached to an object being measured is formed on a back of the single crystal semiconductor substrate opposite the main surface.