Method for fabricating connection regions of an integrated circuit, and integrated circuit having connection regions

Abstract

A method for fabricating an integrated circuit connection region includes application of a dielectric to an integrated circuit with a connection region, application of a corrodible metalization layer to the dielectric, application of a protection device to the metalization layer, and removal of the protection device in a region around the connection region.

1 . A semiconductor device comprising: 
 an integrated circuit having a connection region,    a dielectric on the integrated circuit,    a corrodible metallization layer on the dielectric,    a patterned protection device, wherein the protection device is removed around the connection region.    
   
   
       2 . The semiconductor device of  claim 1 , further comprising a carrier layer applied above the dielectric.  
   
   
       3 . The semiconductor device of  claim 2 , wherein the carrier layer includes copper.  
   
   
       4 . The semiconductor device of  claim 1 , wherein the metallization layer includes an interconnect layer.  
   
   
       5 . The semiconductor device of  claim 4 , wherein the interconnect layer includes copper.  
   
   
       6 . The semiconductor device of  claim 1 , wherein the metallization layer includes a barrier device that is not wetted by solder.  
   
   
       7 . The semiconductor device of  claim 6 , wherein the barrier device includes nickel.  
   
   
       8 . The semiconductor device of  claim 6 , wherein the barrier device includes a metal oxide.  
   
   
       9 . The semiconductor device of  claim 1 , wherein the protection device includes a corrosion-resistant metal.  
   
   
       10 . The semiconductor device of  claim 9 , wherein the corrosion resistant metal includes gold.  
   
   
       11 . The semiconductor device of  claim 1 , further comprising a connection device on the connection region.  
   
   
       12 . The semiconductor device of  claim 11 , wherein the connection device includes solder.  
   
   
       13 . The semiconductor device of  claim 1 , wherein the metallization is oxidized and not wetted by solder in a region exposed by the protection device.