Scanning probe device and processing method by scanning probe

Abstract

There is provided a device in which a probe can be used for both of observation and correction, and which can, even if a next generation photomask of ultra minute structure is made an object, perform a desired processing without injuring a normal portion in a process of obtaining information of a position and a shape of a defect part, and without impairing the probe also at a processing time. It has been adapted such that, at an observation time, a contact pressure between a probe and a mask is reduced to 0.1 nN by applying a vibration of 1 kHz to 1 MHz to the probe. It has been adapted such that a cantilever used in the present invention is formed by a silicon material of 100-600 μm in length and 5-50 μm in thickness and, at the observation time, the probe contacts with the mask at the contact pressure of 0.1 nN and, at the processing time, a defect correction can be performed by causing the probe to contact with the mask at the contact pressure of 10 nN to 1 mN.

1 . (canceled)  
     
     
         2 . A processing method by a scanning probe, which processes a shape information of a sample surface or a sample by causing a probe to approach to or contact with the sample surface, 
 characterized by having a step of obtaining a three-dimensional shape information of the sample by vibrating a cantilever having in its tip the probe in a vertical direction with respect to the sample surface and scanning the sample surface while retaining a 1st contact pressure that the probe applies to the sample surface,    a step of moving the cantilever to a predetermined position on the basis of the three-dimensional shape information, and giving a 2nd contact pressure that the probe applies to the sample surface, and    a step of removing a predetermined portion of the sample by scanning a predetermined region of the sample surface by the probe on the basis of the three-dimensional shape information while maintaining the 2nd contact pressure under a state that the cantilever is not vibrated with respect to the sample surface.    
     
     
         3 . (canceled)  
     
     
         4 . A processing method by a scanning probe according to  claim 2 , characterized in that, after the step of removing the predetermined portion of the sample, there is added a step of applying a periodic vibration to the cantilever, and scanning the sample surface at the 1st contact pressure, thereby obtaining a three-dimensional position information of the predetermined portion of the sample.  
     
     
         5 . (canceled)  
     
     
         6 . A processing method by a scanning probe according to  claim 2 , characterized in that, in the step of obtaining a three-dimensional shape information of the sample, the vibration of the cantilever in the vertical direction with respect to the sample surface is 1 kHz to 1 MHz.  
     
     
         7 . (canceled)  
     
     
         8 . (canceled)  
     
     
         9 . A processing method by a scanning probe according to  claim 2 , characterized in that the 1st contact pressure is 0.1 nN, and the 2nd contact pressure is 10 nN to 1 mN.  
     
     
         10 . (canceled)  
     
     
         11 . A processing method by a scanning probe according to  claim 2 , characterized in that the cantilever is 100-600 μm in length, 5-50 μm in thickness, and formed by a silicon material.  
     
     
         12 . (canceled)  
     
     
         13 . A processing method by a scanning probe according to  claim 2 , characterized in that the sample is a photomask for semiconductor, and a black residue of the photomask is corrected.  
     
     
         14 . (canceled)  
     
     
         15 . (canceled)  
     
     
         16 . (canceled)  
     
     
         17 . (canceled)