Selective activation of aluminum, copper, and tungsten structures

Abstract

A method of activating a metal structure on an intermediate semiconductor device structure toward metal plating. The method comprises providing an intermediate semiconductor device structure comprising at least one first metal structure and at least one second metal structure on a semiconductor substrate. The at least one first metal structure comprises at least one aluminum structure, at least one copper structure, or at least one structure comprising a mixture of aluminum and copper and the at least one second metal structure comprises at least one tungsten structure. One of the at least one first metal structure and the at least one second metal structure is activated toward metal plating without activating the other of the at least one first metal structure and the at least one second metal structure. An intermediate semiconductor device structure is also disclosed.

1 . A method of activating a metal structure on an intermediate semiconductor device structure toward metal plating, comprising: 
 providing an intermediate semiconductor device structure comprising at least one first metal structure and at least one second metal structure on a semiconductor substrate, wherein the at least one first metal structure comprises at least one aluminum structure, at least one copper structure, or at least one structure comprising a mixture of aluminum and copper and wherein the at least one second metal structure comprises at least one tungsten structure; and    activating one of the at least one first metal structure and the at least one second metal structure toward metal plating without activating the other of the at least one first metal structure and the at least one second metal structure toward metal plating.    
   
   
       2 . The method of  claim 1 , wherein providing an intermediate semiconductor device structure comprising at least one first metal structure and at least one second metal structure comprises providing the intermediate semiconductor device structure comprising at least one aluminum bond pad, at least one copper bond pad, or at least one bond pad formed from a mixture of aluminum and copper as the at least one first metal structure.  
   
   
       3 . The method of  claim 1 , wherein providing an intermediate semiconductor device structure comprising at least one first metal structure and at least one second metal structure comprises providing the intermediate semiconductor device structure comprising at least one via having a layer of tungsten therewithin as the at least one second metal structure.  
   
   
       4 . The method of  claim 1 , wherein activating one of the at least one first metal structure and the at least one second metal structure toward metal plating without activating the other of the at least one first metal structure and the at least one second metal structure toward metal plating comprises selecting an activator selective for one of aluminum, copper, and tungsten.  
   
   
       5 . The method of  claim 1 , wherein activating one of the at least one first metal structure and the at least one second metal structure toward metal plating without activating the other of the at least one first metal structure and the at least one second metal structure toward metal plating comprises activating one of the at least one first metal structure and the at least one second structure toward nickel plating.  
   
   
       6 . The method of  claim 5 , wherein activating one of the at least one first metal structure and the at least one second structure toward nickel plating comprises exposing the intermediate semiconductor device structure to a zincate solution.  
   
   
       7 . The method of  claim 6 , wherein exposing the intermediate semiconductor device structure to a zincate solution comprises exposing the intermediate semiconductor device structure to an aqueous solution comprising zinc oxide and sodium hydroxide.  
   
   
       8 . The method of  claim 5 , wherein activating one of the at least one first metal structure and the at least one second structure toward nickel plating comprises exposing the intermediate semiconductor device structure to a palladium solution.  
   
   
       9 . The method of  claim 8 , wherein exposing the intermediate semiconductor device structure to a palladium solution comprises exposing the intermediate semiconductor device structure to an aqueous solution comprising palladium (II) ions.  
   
   
       10 . The method of  claim 1 , further comprising nickel plating one of the at least one first metal structure and the at least one second metal structure.  
   
   
       11 . The method of  claim 10 , wherein nickel plating one of the at least one first metal structure and the at least one second metal structure comprises nickel plating at least one aluminum bond pad or at least one copper bond pad without nickel plating at least one via having a layer of tungsten therewithin.  
   
   
       12 . The method of  claim 10 , wherein nickel plating one of the at least one first metal structure and the at least one second metal structure comprises nickel plating at least one via having a layer of tungsten therewithin without nickel plating at least one aluminum bond pad or at least one copper bond pad.  
   
   
       13 . An intermediate semiconductor device structure, comprising: 
 a semiconductor substrate comprising at least one first metal structure and at least one second metal structure, wherein the at least one first metal structure comprises at least one aluminum structure, at least one copper structure, or at least one structure comprising a mixture of aluminum and copper and wherein the at least one second metal structure comprises at least one tungsten structure, wherein one of the at least one first metal structure and the at least one second metal structure is activated toward metal plating without activating the other of the at least one first metal structure and the at least one second metal structure toward metal plating.    
   
   
       14 . The intermediate semiconductor device structure of  claim 13 , wherein the at least one first metal structure comprises at least one aluminum bond pad, at least one copper bond pad, or at least one bond pad formed from a mixture of aluminum and copper.  
   
   
       15 . The intermediate semiconductor device structure of  claim 13 , wherein the at least second metal structure comprises at least one via having a layer of tungsten therewithin.