Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrate

Abstract

The invention is directed to a device for regulating the flow of electric current with high dielectric constant gate insulating layer and a source and/or drain forming a Schottky contact or Schottky-like region with a substrate and its fabrication method. In one aspect, the gate insulating layer has a dielectric constant greater than the dielectric constant of silicon. In another aspect, the current regulating device may be a MOSFET device, optionally a planar P-type or N-type MOSFET, having any orientation. In another aspect, the source and/or drain may consist partially or fully of a silicide.

1 - 96 . (canceled)  
   
   
       97 . A device for regulating the flow of electrical current, the device comprising: 
 a semiconductor substrate;    a gate electrode;    an electrically insulating layer located between the gate electrode and the semiconductor substrate, the insulating layer having a dielectric constant greater than  4 . 0 ; and    a source electrode and a drain electrode in contact with the semiconductor substrate and proximal to the gate electrode wherein at least one of the source electrode and the drain electrode forms a Schottky contact or Schottky-like region with the semiconductor substrate.    
   
   
       98 . The device of  claim 97 , wherein the source and drain electrodes are formed from a member of the group consisting of the rare earth silicides.  
   
   
       99 . The device of  claim 97 , wherein the insulating layer is formed from a member of the group consisting of the metal oxides.  
   
   
       100 . The device of  claim 97 , wherein the Schottky contact or Schottky-like region is at least in areas adjacent to a channel region formed between the source electrode and the drain electrode.  
   
   
       101 . The device of  claim 97 , wherein an entire interface between at least one of the source and the drain electrodes and the semiconductor substrate forms a Schottky contact or Schottky-like region with the semiconductor substrate.  
   
   
       102 . The device of  claim 100 , wherein the channel region is doped.  
   
   
       103 . The device of  claim 97 , wherein the insulating layer includes more than one layer.  
   
   
       104 . The device of  claim 98 , wherein the insulating layer is formed from a member of the group consisting of metal oxides.  
   
   
       105 . The device of  claim 98 , wherein the insulating layer is formed from an oxy-nitride stack.  
   
   
       106 . The device of  claim 104 , wherein the Schottky contact or Schottky-like region is formed at least in areas adjacent to a channel region formed between the source electrode and the drain electrode, and wherein the channel region is doped.  
   
   
       107 . The device of  claim 105 , wherein the Schottky contact or Schottky-like region is formed at least in areas adjacent to a channel region formed between the source electrode and the drain electrode, and wherein the channel region is doped.  
   
   
       108 . A device for regulating the flow of electrical current, the device comprising: 
 a semiconductor substrate;    a gate electrode;    an electrically insulating layer located between the gate electrode and the semiconductor substrate, the insulating layer having a dielectric constant greater than 7.6 ; and    a source electrode and a drain electrode in contact with the semiconductor substrate and proximal to the gate electrode wherein at least one of the source electrode and the drain electrode forms a Schottky contact or Schottky-like region with the semiconductor substrate.    
   
   
       109 . The device of  claim 108 , wherein the source and drain electrodes are formed from a member of the group consisting of the rare earth silicides.  
   
   
       110 . The device of  claim 108 , wherein the insulating layer is formed from a member of the group consisting of the metal oxides.  
   
   
       111 . The device of  claim 108 , wherein the Schottky contact or Schottky-like region is at least in areas adjacent to a channel region formed between the source electrode and the drain electrode.  
   
   
       112 . The device of  claim 108 , wherein an entire interface between at least one of the source and the drain electrodes and the semiconductor substrate forms a Schottky contact or Schottky-like region with the semiconductor substrate.  
   
   
       113 . The device of  claim 111 , wherein the channel region is doped.  
   
   
       114 . The device of  claim 108 , wherein the insulating layer includes more than one layer.  
   
   
       115 . A device for regulating the flow of electrical current, the device comprising: 
 a semiconductor substrate;    a gate electrode;    an electrically insulating layer located between the gate electrode and the semiconductor substrate, the insulating layer having a dielectric constant greater than 15; and    a source electrode and a drain electrode in contact with the semiconductor substrate and proximal to the gate electrode wherein at least one of the source electrode and the drain electrode forms a Schottky contact or Schottky-like region with the semiconductor substrate.    
   
   
       116 . The device of  claim 115 , wherein the source and drain electrodes are formed from a member of the group consisting of the rare earth silicides.  
   
   
       117 . The device of  claim 115 , wherein the insulating layer is formed from a member of the group consisting of the metal oxides.  
   
   
       118 . The device of  claim 115 , wherein the Schottky contact or Schottky-like region is at least in areas adjacent to a channel region formed between the source electrode and the drain electrode.  
   
   
       119 . The device of  claim 115 , wherein an entire interface between at least one of the source and the drain electrodes and the semiconductor substrate forms a Schottky contact or Schottky-like region with the semiconductor substrate.  
   
   
       120 . The device of  claim 118 , wherein the channel region is doped.  
   
   
       121 . The device of  claim 115 , wherein the insulating layer includes more than one layer.