Inventor · disambiguated record
John M. Larson
Also filed as: LARSON JOHN M · LARSON JOHN MICHAEL
17 granted patents·12 pending applications·196 citations·filing 2002–2025
94Inventor score
Top patents by PatentIndex Score
29 records- 0191US6949787B2Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrateSPINNAKER SEMICONDUCTOR INC·Filed 2002·Granted Sep 27, 2005·39 cites·9 claims
- 0290US8058167B2Dynamic Schottky barrier MOSFET device and method of manufactureSNYDER JOHN P·Filed 2009·Granted Nov 15, 2011·15 cites·21 claims
- 0389US6974737B2Schottky barrier CMOS fabrication methodSPINNAKER SEMICONDUCTOR INC·Filed 2003·Granted Dec 13, 2005·42 cites·21 claims
- 0488US8154025B2Schottky barrier CMOS device and methodSNYDER JOHN P·Filed 2009·Granted Apr 10, 2012·13 cites·20 claims
- 0587US8022459B2Metal source and drain transistor having high dielectric constant gate insulatorAVOLARE 2 LLC·Filed 2010·Granted Sep 20, 2011·6 cites·20 claims
- 0687US7221019B2Short-channel Schottky-barrier MOSFET device and manufacturing methodSPINNAKER SEMICONDUCTOR INC·Filed 2006·Granted May 22, 2007·13 cites·5 claims
- 0785US11309107B2Anisotropic iron nitride permanent magnetsNIRON MAGNETICS INC·Filed 2021·Granted Apr 19, 2022·1 cites·26 claims
- 0885US6784035B2Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrateSPINNAKER SEMICONDUCTOR INC·Filed 2003·Granted Aug 31, 2004·27 cites·35 claims
- 0983US11312662B2High isostatic strength honeycomb structures and extrusion dies thereforCORNING INC·Filed 2019·Granted Apr 26, 2022·2 cites·21 claims
- 1082US8084342B2Method of manufacturing a CMOS device with zero soft error rateSNYDER JOHN P·Filed 2010·Granted Dec 27, 2011·6 cites·7 claims
- 1182US2024047102A1Anisotropic iron nitride permanent magnetsNIRON MAGNETICS INC·Filed 2023·Application pending·0 cites
- 1279US11830644B2Anisotropic iron nitride permanent magnetsNIRON MAGNETICS INC·Filed 2022·Granted Nov 28, 2023·0 cites·9 claims
- 1378US7821075B2CMOS device with zero soft error rateAVOLARE 2 LLC·Filed 2006·Granted Oct 26, 2010·7 cites·20 claims
- 1477US2025329484A1Coercivity-enhanced iron nitride nanoparticles with high saturation magnetizationNIRON MAGNETICS INC·Filed 2025·Application pending·0 cites
- 1569US7294898B2Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrateSPINNAKER SEMICONDUCTOR INC·Filed 2004·Granted Nov 13, 2007·10 cites·46 claims
- 1665US12362082B2Coercivity-enhanced iron nitride nanoparticles with high saturation magnetizationNIRON MAGNETICS INC·Filed 2020·Granted Jul 15, 2025·0 cites·14 claims
- 1756US7124237B2Virtual machine emulation in the memory space of a programmable processorSEAGATE TECHNOLOGY LLC·Filed 2003·Granted Oct 17, 2006·12 cites·16 claims
- 1854US7939902B2Field effect transistor having source and/or drain forming schottky or schottky-like contact with strained semiconductor substrateAVOLARE 2 LLC·Filed 2009·Granted May 10, 2011·0 cites·20 claims
- 1953US2007007605A1Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrateSPINNAKER SEMICONDUCTOR INC·Filed 2006·Application pending·0 cites
- 2051US2008079107A1Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrateSPINNAKER SEMICONDUCTOR INC·Filed 2007·Application pending·0 cites
- 2150US2010025774A1Schottky barrier integrated circuitAVOLARE 2 LLC·Filed 2009·Application pending·0 cites
- 2250US2012056250A1Dynamic schottky barrier mosfet device and method of manufactureSNYDER JOHN P·Filed 2011·Application pending·0 cites
- 2349US2007026590A1Dynamic Schottky barrier MOSFET device and method of manufactureSPINNAKER SEMICONDUCTOR INC·Filed 2006·Application pending·0 cites
- 2448US7291524B2Schottky-barrier mosfet manufacturing method using isotropic etch processSPINNAKER SEMICONDUCTOR INC·Filed 2004·Granted Nov 6, 2007·3 cites·2 claims
- 2545US2005287730A1Schottky barrier CMOS device and methodSNYDER JOHN P·Filed 2005·Application pending·0 cites
- 2641US2005139860A1Dynamic schottky barrier MOSFET device and method of manufactureFiled 2004·Application pending·0 cites
- 2739US2005104152A1Schottky barrier integrated circuitFiled 2004·Application pending·0 cites
- 2839US2006237752A1Schottky barrier MOSFET device and circuitLARSON JOHN M·Filed 2006·Application pending·0 cites
- 2935US2003235936A1Schottky barrier CMOS device and methodFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →