Dynamic schottky barrier mosfet device and method of manufacture
Abstract
A device for regulating a flow of electric current and its manufacturing method are provided. The device includes metal-insulator-semiconductor source-drain contacts forming Schottky barrier or Schottky-like junctions to the semiconductor substrate. The device includes an interfacial layer between the semiconductor substrate and a metal source and/or drain electrode, thereby dynamically adjusting a Schottky barrier height by applying different bias conditions. The dynamic Schottky barrier modulation provides increased electric current for low drain bias conditions, reducing the sub-linear turn-on characteristic of Schottky barrier MOSFET devices and improving device performance.
Claims
exact text as granted — not AI-modifiedWe claim:
1 . A MOSFET device comprising:
a gate electrode on a semiconductor substrate; a source electrode and a drain electrode on the semiconductor substrate, wherein at least one of the source electrode and the drain electrode is metal; and an interfacial layer between the substrate and at least one of the metal source and drain electrodes.
2 . The device of claim 1 wherein the interfacial layer is disposed in areas at least proximal to the gate electrode.
3 . The device of claim 1 wherein an entire Schottky or Schottky-like junction between the substrate and at least one of the metal source and drain electrodes incorporates the interfacial layer.
4 . The device of claim 1 wherein at least in areas proximal to the gate electrode, a Schottky or Schottky-like junction between the substrate and at least one of the metal source and drain electrodes incorporates the interfacial layer.
5 . The device of claim 1 wherein at least one of the metal source and drain electrodes having the interfacial layer form a Schottky or Schottky-like junction to the substrate.
6 . The device of claim 1 wherein the interfacial layer comprises an insulator.Join the waitlist — get patent alerts
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