US2012056250A1PendingUtilityA1

Dynamic schottky barrier mosfet device and method of manufacture

Individually held — no corporate assignee on recordPriority: Oct 22, 2003Filed: Nov 14, 2011Published: Mar 8, 2012
Est. expiryOct 22, 2023(expired)· nominal 20-yr term from priority
H10D 64/021H10D 64/647H10D 62/165H10D 62/116H10D 62/021H10D 30/0277
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Claims

Abstract

A device for regulating a flow of electric current and its manufacturing method are provided. The device includes metal-insulator-semiconductor source-drain contacts forming Schottky barrier or Schottky-like junctions to the semiconductor substrate. The device includes an interfacial layer between the semiconductor substrate and a metal source and/or drain electrode, thereby dynamically adjusting a Schottky barrier height by applying different bias conditions. The dynamic Schottky barrier modulation provides increased electric current for low drain bias conditions, reducing the sub-linear turn-on characteristic of Schottky barrier MOSFET devices and improving device performance.

Claims

exact text as granted — not AI-modified
We claim: 
     
         1 . A MOSFET device comprising:
 a gate electrode on a semiconductor substrate;   a source electrode and a drain electrode on the semiconductor substrate, wherein at least one of the source electrode and the drain electrode is metal; and   an interfacial layer between the substrate and at least one of the metal source and drain electrodes.   
     
     
         2 . The device of  claim 1  wherein the interfacial layer is disposed in areas at least proximal to the gate electrode. 
     
     
         3 . The device of  claim 1  wherein an entire Schottky or Schottky-like junction between the substrate and at least one of the metal source and drain electrodes incorporates the interfacial layer. 
     
     
         4 . The device of  claim 1  wherein at least in areas proximal to the gate electrode, a Schottky or Schottky-like junction between the substrate and at least one of the metal source and drain electrodes incorporates the interfacial layer. 
     
     
         5 . The device of  claim 1  wherein at least one of the metal source and drain electrodes having the interfacial layer form a Schottky or Schottky-like junction to the substrate. 
     
     
         6 . The device of  claim 1  wherein the interfacial layer comprises an insulator.

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