Inventor · disambiguated record
John P. Snyder
Also filed as: SNYDER JOHN · SNYDER JOHN P
28 granted patents·23 pending applications·623 citations·filing 1996–2023
97Inventor score
Top patents by PatentIndex Score
51 records- 0198US6303479B1Method of manufacturing a short-channel FET with Schottky-barrier source and drain contactsSPINNAKER SEMICONDUCTOR INC·Filed 1999·Granted Oct 16, 2001·184 cites·42 claims
- 0297US6744103B2Short-channel schottky-barrier MOSFET device and manufacturing methodSPINNAKER SEMICONDUCTOR INC·Filed 2002·Granted Jun 1, 2004·114 cites·18 claims
- 0395US8760846B1Apparatus and method for capacitors having engineered electrodes with very high energy densitySNYDER JOHN P·Filed 2011·Granted Jun 24, 2014·13 cites·20 claims
- 0493US9911542B2Capacitors having engineered electrodes with very high energy densityGRANBLUETECH L L C·Filed 2016·Granted Mar 6, 2018·4 cites·20 claims
- 0592US10460880B2Capacitors having engineered electrodes with very high energy density and associated methodGRANBLUETECH L L C·Filed 2018·Granted Oct 29, 2019·3 cites·20 claims
- 0692US6495882B2Short-channel schottky-barrier MOSFET deviceSPINNAKER SEMICONDUCTOR INC·Filed 2001·Granted Dec 17, 2002·45 cites·26 claims
- 0791US9418795B2Method and apparatus for capacitors having engineered electrodes with very high energy densityGRANBLUETECH L L C·Filed 2014·Granted Aug 16, 2016·5 cites·20 claims
- 0891US6949787B2Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrateSPINNAKER SEMICONDUCTOR INC·Filed 2002·Granted Sep 27, 2005·39 cites·9 claims
- 0990US8058167B2Dynamic Schottky barrier MOSFET device and method of manufactureSNYDER JOHN P·Filed 2009·Granted Nov 15, 2011·15 cites·21 claims
- 1089US6974737B2Schottky barrier CMOS fabrication methodSPINNAKER SEMICONDUCTOR INC·Filed 2003·Granted Dec 13, 2005·42 cites·21 claims
- 1188US8154025B2Schottky barrier CMOS device and methodSNYDER JOHN P·Filed 2009·Granted Apr 10, 2012·13 cites·20 claims
- 1287US8022459B2Metal source and drain transistor having high dielectric constant gate insulatorAVOLARE 2 LLC·Filed 2010·Granted Sep 20, 2011·6 cites·20 claims
- 1387US7221019B2Short-channel Schottky-barrier MOSFET device and manufacturing methodSPINNAKER SEMICONDUCTOR INC·Filed 2006·Granted May 22, 2007·13 cites·5 claims
- 1485US6784035B2Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrateSPINNAKER SEMICONDUCTOR INC·Filed 2003·Granted Aug 31, 2004·27 cites·35 claims
- 1583US7977173B2Silicon thin film transistors, systems, and methods of making sameSOLIGIE INC·Filed 2009·Granted Jul 12, 2011·10 cites·24 claims
- 1682US8084342B2Method of manufacturing a CMOS device with zero soft error rateSNYDER JOHN P·Filed 2010·Granted Dec 27, 2011·6 cites·7 claims
- 1779US7052945B2Short-channel Schottky-barrier MOSFET device and manufacturing methodSPINNAKER SEMICONDUCTOR INC·Filed 2003·Granted May 30, 2006·15 cites·38 claims
- 1878US7821075B2CMOS device with zero soft error rateAVOLARE 2 LLC·Filed 2006·Granted Oct 26, 2010·7 cites·20 claims
- 1977US6931164B2Waveguide devices incorporating Kerr-based and other similar optically functional mediumsOPTIMER PHOTONICS INC·Filed 2003·Granted Aug 16, 2005·18 cites·81 claims
- 2076US10741334B2Method and associated capacitors having engineered electrodes with very high energy densityGRANBLUETECH LLC·Filed 2019·Granted Aug 11, 2020·1 cites·23 claims
- 2175US11600452B2Vacuum-capacitor method and apparatusGRANBLUETECH L L C·Filed 2021·Granted Mar 7, 2023·0 cites·20 claims
- 2274US10991518B2Vacuum-capacitor apparatus and methodGRANBLUETECH L L C·Filed 2020·Granted Apr 27, 2021·0 cites·20 claims
- 2374US8039838B2Silicon thin film transistors, systems, and methods of making sameSOLIGIE INC·Filed 2009·Granted Oct 18, 2011·5 cites·25 claims
- 2469US7294898B2Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrateSPINNAKER SEMICONDUCTOR INC·Filed 2004·Granted Nov 13, 2007·10 cites·46 claims
- 2569US2024141503A1Method of applying a dielectric coating on a component of an electrical deviceQUANTINUUM LLC·Filed 2023·Application pending·0 cites
- 2658US5863828ATrench planarization techniqueNAT SEMICONDUCTOR CORP·Filed 1996·Granted Jan 26, 1999·24 cites·27 claims
- 2755US2010032771A1Short-channel schottky-barrier mosfet device and manufacturing methodAVOLARE 2 LLC·Filed 2009·Application pending·0 cites
- 2854US7939902B2Field effect transistor having source and/or drain forming schottky or schottky-like contact with strained semiconductor substrateAVOLARE 2 LLC·Filed 2009·Granted May 10, 2011·0 cites·20 claims
- 2953US2007007605A1Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrateSPINNAKER SEMICONDUCTOR INC·Filed 2006·Application pending·0 cites
- 3052US2010059819A1Power transistor with metal source and method of manufactureSPINNAKER SEMICONDUCTOR INC·Filed 2009·Application pending·0 cites
- 3151US2011175160A1Short-channel schottky-barrier mosfet device and method of manufactureAVOLARE 2 LLC·Filed 2011·Application pending·0 cites
- 3251US2008079107A1Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrateSPINNAKER SEMICONDUCTOR INC·Filed 2007·Application pending·0 cites
- 3350US2010025774A1Schottky barrier integrated circuitAVOLARE 2 LLC·Filed 2009·Application pending·0 cites
- 3450US2012056250A1Dynamic schottky barrier mosfet device and method of manufactureSNYDER JOHN P·Filed 2011·Application pending·0 cites
- 3550US2010013015A1Metal source/drain schottky barrier silicon-on-nothing mosfet deviceAVOLARE 2 LLC·Filed 2009·Application pending·0 cites
- 3649US2007026590A1Dynamic Schottky barrier MOSFET device and method of manufactureSPINNAKER SEMICONDUCTOR INC·Filed 2006·Application pending·0 cites
- 3749US2025172852A1Apparatus and method for optical frequency conversionHONEYWELL INT INC·Filed 2023·Application pending·0 cites
- 3848US7674680B2Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrateAVOLARE 2 LLC·Filed 2004·Granted Mar 9, 2010·1 cites·53 claims
- 3948US7291524B2Schottky-barrier mosfet manufacturing method using isotropic etch processSPINNAKER SEMICONDUCTOR INC·Filed 2004·Granted Nov 6, 2007·3 cites·2 claims
- 4048US2007187756A1Metal Source Power Transistor And Method Of ManufactureSNYDER JOHN P·Filed 2007·Application pending·0 cites
- 4147US2012126311A1Power transistor with metal source and method of manufactureSNYDER JOHN P·Filed 2011·Application pending·0 cites
- 4245US2007194353A1Metal source/drain Schottky barrier silicon-on-nothing MOSFET device and method thereofSNYDER JOHN P·Filed 2006·Application pending·0 cites
- 4345US2005287730A1Schottky barrier CMOS device and methodSNYDER JOHN P·Filed 2005·Application pending·0 cites
- 4444US2004171240A1Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrateFiled 2004·Application pending·0 cites
- 4542US2005051815A1Short-channel Schottky-barrier MOSFET device and manufacturing methodFiled 2004·Application pending·0 cites
- 4641US2005139860A1Dynamic schottky barrier MOSFET device and method of manufactureFiled 2004·Application pending·0 cites
- 4739US2005104152A1Schottky barrier integrated circuitFiled 2004·Application pending·0 cites
- 4839US2006237752A1Schottky barrier MOSFET device and circuitLARSON JOHN M·Filed 2006·Application pending·0 cites
- 4938US2006079059A1Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrateSNYDER JOHN P·Filed 2005·Application pending·0 cites
- 5035US2003235936A1Schottky barrier CMOS device and methodFiled 2003·Application pending·0 cites
Showing the top 50 of 51 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →