Wire-bonding method and semiconductor package using the same

Abstract

A wire-bonding method and a semiconductor package using the same are provided. The semiconductor package includes a carrier; a chip mounted on the carrier; a plurality of first wires and second wires alternatively arranged in a stagger manner, with a wire loop of each second wire being downwardly bent to form a deformed portion so as to provide a height different between the wire loops of each first wire and each second wire, wherein the first and second wires electrically connect the chip to the carrier; and an encapsulant for encapsulating the chip, the first wires, the second wires and a portion of the carrier. The height difference between the wire loops of each first wire and each second wire increases a pitch between adjacent first and second wires thereby preventing the wires from contact and short circuit with each other due to wire sweep during an encapsulation process.

1 - 10 . (canceled)  
     
     
         11 . A wire-bonding method for use with a carrier having a plurality of conductive members on which at least one second bonding point is formed, the carrier being mounted thereon with at least one chip having an active surface on which at least one first bonding point is formed, the wire-bonding method comprising the steps of: 
 using a wire-bonding means to connect one end of a wire to the first bonding point of the chip;    moving the wire-bonding means upwardly from the first bonding point by a predetermined distance and horizontally shifting the wire-bonding means in a direction away from the second bonding point by a first distance so as to generate a first wire bend;    then moving the wire-bonding means upwardly by a predetermined distance and horizontally shifting the wire-bonding means in a direction towards the second bonding point by a second distance so as to generate a second wire bend, wherein the second distance is larger than the first distance;    further moving the wire-bonding means upwardly by a predetermined distance; and    moving the wire-bonding means to the second bonding point and cutting the wire using the wire-bonding means to connect the cutting end of the wire to the second bonding point, such that the wire is bonded to the first bonding point of the chip and the second bonding point on the carrier respectively, and a wire loop of the wire is formed with a deformed portion corresponding to the second wire bend.    
     
     
         12 . The wire-bonding method of  claim 11 , wherein the deformed portion of the wire loop of the wire is lower in height than the active surface of the chip.  
     
     
         13 . The wire-bonding method of  claim 11 , wherein the wire is a gold wire.  
     
     
         14 . The wire-bonding method of  claim 11 , wherein the wire is a signal wire.  
     
     
         15 . The wire-bonding method of  claim 11 , wherein the wire is a ground wire.  
     
     
         16 . The wire-bonding method of  claim 11 , wherein the wire-bonding means is a capillary of a wire bonder.  
     
     
         17 . The wire-bonding method of  claim 11 , wherein the carrier is a lead frame.  
     
     
         18 . The wire-bonding method of  claim 17 , wherein the conductive members are leads of the lead frame.  
     
     
         19 . The wire-bonding method of  claim 11 , wherein the carrier is a substrate.  
     
     
         20 . The wire-bonding method of  claim 19 , wherein the conductive members are conductive traces formed on the substrate.