Chemical vapor deposition chamber with dual frequency bias and method for manufacturing a photomask using the same

Abstract

A method and apparatus for process integration in manufacture of a photomask are disclosed. In one embodiment, a cluster tool suitable for process integration in manufacture of a photomask including a vacuum transfer chamber having coupled thereto at least one hard mask deposition chamber and at least one plasma chamber configured for etching chromium. In another embodiment, a method for process integration in manufacture of a photomask includes depositing a hard mask on a substrate in a first processing chamber, depositing a resist layer on the substrate, patterning the resist layer, etching the hard mask through apertures formed in the patterned resist layer in a second chamber; and etching a chromium layer through apertures formed in the hard mask in a third chamber.

1 . A chemical vapor deposition (CVD) chamber comprising: 
 a chamber body;    a substrate support disposed in an interior volume of the chamber body;    an electrode embedded in the substrate support;    a first RF power source coupled to the electrode;    a second RF power source coupled to the electrode;    a showerhead disposed in the interior volume of the chamber body; and    a third RF power source coupled to the showerhead.    
   
   
       2 . The CVD chamber of  claim 1 , further comprising: 
 a reticle adapter disposed on the substrate support.    
   
   
       3 . The CVD chamber of  claim 2 , wherein the reticle adapter further comprises: 
 a cover ring disposed on the substrate support; and    a capture ring disposed on the cover ring and defining a substrate receiving pocket therewith.    
   
   
       4 . The CVD chamber of  claim 1 , further comprising; 
 a matching circuit coupled to the first and second RF sources; and    a single feed coupling the matching circuit to the first electrode.    
   
   
       5 . The CVD chamber of  claim 1 , wherein a power applied to the showerhead is greater than a power applied to the electrode.  
   
   
       6 . The CVD chamber of  claim 1 , wherein the first RF power source is adapted to provide a higher frequency than the second RF power.  
   
   
       7 . A chemical vapor deposition (CVD) comprising: 
 a chamber body;    a showerhead disposed in an interior volume of the chamber body;    a substrate support disposed in the interior volume of the chamber body;    an electrode embedded in the substrate support;    a first RF source for providing a first RF signal coupled to the electrode through a matching circuit;    a second RF source for providing a second RF signal coupled to the electrode through the matching circuit;    a third RF power source coupled to the showerhead; and    a reticle adapter disposed on the substrate support.    
   
   
       8 . The CVD chamber of  claim 7 , wherein the reticle adapter further comprises: 
 a cover ring disposed on the substrate support; and    a capture ring disposed on the cover ring and defining a substrate receiving pocket therewith.    
   
   
       9 . The CVD chamber of  claim 7 , further comprising: 
 a single feed coupling the matching circuit first and second RF sources to the first electrode.    
   
   
       10 . A method of depositing a hard mask layer, comprising: 
 providing a substrate on a substrate support disposed in a chemical vapor deposition chamber, wherein the substrate includes a quartz layer and a chromium layer;    flowing a hard mask precursor gas into the chemical vapor deposition chamber;    a supplying a first RF signal to an electrode disposed in the substrate support;    supplying a second RF signal to the electrode disposed in the substrate support, wherein the first and second RF signals have difference frequencies; and    depositing a hard mask layer on the substrate.    
   
   
       11 . The method of  claim 10  further comprising: 
 coupling a third RF signal to a showerhead disposed above the substrate support.    
   
   
       12 . The method of  claim 13 , wherein the first and second RF signals have a combined power less than the third RF signal.  
   
   
       13 . The method of  claim 12 , wherein the third RF signal maintains a plasma between the substrate support and showerhead.