US2007051632A1PendingUtilityA1

Polishing method, polishing apparatus, plating method, and plating apparatus

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Assignee: SONY CORPPriority: Sep 19, 2000Filed: Oct 31, 2006Published: Mar 8, 2007
Est. expirySep 19, 2020(expired)· nominal 20-yr term from priority
H10P 95/04H10P 52/403H10P 14/47H10W 20/065H10W 20/062C25D 5/04C25D 21/12C25F 7/00C25D 7/123C25D 17/001B24B 37/042C25F 3/16C25D 5/02B24B 1/00
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Claims

Abstract

A polishing method and polishing apparatus able to easily flatten an initial unevenness with an excellent efficiency of removal of excess copper film and suppress damage to a lower interlayer insulation film, and a plating method and plating apparatus able to deposit a flat copper film. The polishing method comprises the steps of measuring thickness equivalent data of a film on a wafer, making a cathode member smaller than the surface face a region thereof, interposing an electrolytic solution between the surface and the cathode member, applying a voltage using the cathode member as a cathode and the film an anode, performing electrolytic polishing by electrolytic elution or anodic oxidation and chelation and removal of a chelate film in the same region preferentially from projecting portions of the film until removing the target amount of film obtained from the thickness equivalent data, and repeating steps of moving the cathode member to another region to flattening the regions over the entire surface. Further, plating is performed by a reverse reaction of the above.

Claims

exact text as granted — not AI-modified
1 - 87 . (canceled)  
   
   
       88 . A plating method depositing a plating film on a surface of an object, comprising the steps of 
 measuring surface height data of the surface or thickness date of the plating film on the object and    making a relatively small anode member compared with the surface face a region of the surface, applying a voltage with the anode member serving as an anode and the surface as a cathode while interposing an electrolytic plating solution at least between the region of the surface and the anode member, and depositing the plating film by plating in that region of the surface until depositing a target amount of the plating film deduced from the surface height date or the thickness data of the plating film at the time of the measurement; wherein    the process of moving the anode member to another region of the surface and depositing a plating film by plating in that other region is repeated over the entire surface.    
   
   
       89 . A plating method as set forth in  claim 88 , wherein the plating film comprises a copper film.  
   
   
       90 - 91 . (canceled)

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