Chemical mechanical polishing device including a polishing pad and cleaning method thereof and method for planarization

Abstract

A chemical mechanical polishing device used to polish a wafer according to the present invention includes a polishing table, a polishing pad, a slurry supply device, a wafer carrier and a high-pressure liquid cleaning device. The polishing pad is disposed on the polishing table to polish the wafer. The slurry supply device is disposed on the polishing table to supply the slurry. In addition, the wafer carrier is disposed the polishing table to carry the wafer in such a manner that the wafer is brought into contact with the polishing pad. Besides, the high-pressure cleaning device is disposed on the polishing table to remove the impurities on the polishing pad by high-pressure liquid.

1 . A chemical mechanical polishing device, suitable for grinding a wafer, the chemical mechanical polishing device comprising 
 a polishing table;    a polishing pad, disposed on the polishing table and used for grinding the wafer;    a slurry supply device, disposed on the polishing table;    a wafer carrier, disposed on the polishing table and used for supporting the wafer in such a manner that the wafer is brought into contact with the polishing pad; and    a high-pressure liquid cleaning device, disposed on the polishing table and used for transporting a high-pressure liquid onto the polishing pad to remove impurities on the polishing pad.    
   
   
       2 . The chemical mechanical polishing device according to  claim 1 , wherein the high-pressure liquid cleaning device comprises: 
 a high-pressure liquid transport exit for spraying the liquid onto the polishing pad;    a pipe for transporting the liquid to the high-pressure liquid transport exit; and    a pressured tank for drawing the liquid into the pipe and adjusting a magnitude of the liquid pressure.    
   
   
       3 . The chemical mechanical polishing device according to  claim 2 , wherein the high-pressure liquid transport exit is a high-pressure nozzle, comprising a water column nozzle, a water-spraying nozzle, or a water blade nozzle.  
   
   
       4 . The chemical mechanical polishing device according to  claim 3 , further comprises a transmission device for changing a liquid-ejected direction of the high-pressure nozzle.  
   
   
       5 . The chemical mechanical polishing device according to  claim 4 , wherein the transmission device comprises a rotation rod.  
   
   
       6 . The chemical mechanical polishing device according to  claim 2 , further comprises a mask for limiting a liquid-ejected range of the high-pressure nozzle.  
   
   
       7 . The chemical mechanical polishing device according to  claim 1 , wherein the slurry supply device further comprises a slurry supply pipe and a water-supplied pipe.  
   
   
       8 . The chemical mechanical polishing device according to  claim 1 , further comprises a pumping device for exhausting liquid vapour.  
   
   
       9 . A method for cleaning a chemical mechanical polishing pad, comprising: 
 providing a polishing pad on which impurities are disposed; and    removing the impurities disposed on the polishing pad by using a high-pressure liquid.    
   
   
       10 . The method for cleaning a chemical mechanical polishing pad according to  claim 9 , wherein the high-pressure liquid comprises high-pressure water column, high-pressure water-spraying or high-pressure water blade.  
   
   
       11 . A planarization method, comprising: 
 providing a layer to be planarized; and    planarizing the layer to be planarized by using a chemical mechanical polishing device to form a planarized structure, wherein the chemical mechanical polishing device comprises:    a polishing table;    a polishing pad, disposed on the polishing table and used for grinding the wafer;    a slurry supply device, disposed on the polishing table;    a wafer carrier, disposed on the polishing table and used for supporting the wafer in such a manner that the wafer is brought into contact with the polishing pad; and    a high-pressure liquid cleaning device, disposed on the polishing table and used for transporting a high-pressure liquid onto the polishing pad to remove impurities on the polishing pad.    
   
   
       12 . The planarization method according to  claim 11 , wherein the high-pressure liquid cleaning device comprising: 
 a high-pressure liquid transport exit for spraying the liquid onto the polishing pad;    a pipe for transporting the liquid to the high-pressure liquid transport exit; and    a pressured tank for drawing the liquid into the pipe and adjusting a magnitude of the liquid pressure.    
   
   
       13 . The planarization method according to  claim 12 , wherein the high-pressure liquid transport exit comprises a water column nozzle, a water-spraying nozzle, or a water blade nozzle.  
   
   
       14 . The planarization method according to  claim 11 , wherein the layer to be planarized is a dielectric layer or a metal layer.  
   
   
       15 . The planarization method according to  claim 11 , wherein the slurry supply device further comprises a slurry supply pipe and a water-supplied pipe.