Semiconductor device having a heat spreader exposed from a seal resin

Abstract

A semiconductor element has a circuit formation surface on which electrode terminals are arranged in a peripheral part thereof. The semiconductor element is encapsulated by a mold resin on a substrate which has openings at positions corresponding to the electrodes of the semiconductor element. The semiconductor element is mounted to the substrate in a state where the circuit formation surface faces the substrate and the electrode terminals are positioned at the openings and a back surface opposite to the circuit formation surface of the semiconductor element is exposed from the mold resin. A heat-emitting member formed of a metal plate is provided on a surface of the substrate opposite to a surface on which the semiconductor element is mounted. The surface of the heat-emitting member being exposed from the mold resin.

1 . A semiconductor device comprising: 
 a semiconductor element which has a circuit formation surface on which electrode terminals are arranged in a peripheral part thereof, the semiconductor element encapsulated by a mold resin on a substrate which has openings at positions corresponding to the electrodes of the semiconductor element; said semiconductor element being mounted to said substrate in a state where said circuit formation surface faces said substrate and said electrode terminals are positioned at said openings and a back surface opposite to the circuit formation surface of said semiconductor element is exposed from the mold resin; and    a heat-emitting member formed of a metal plate provided on a surface of said substrate opposite to a surface on which said semiconductor element is mounted, the surface of the heat-emitting member being exposed from the mold resin.    
     
     
         2 . The semiconductor device as claimed in  claim 1 , wherein metal made projections are provided on the exposed surface of said heat-emitting member.  
     
     
         3 . The semiconductor device as claimed in  claim 1 , wherein a heat-emitting plate formed of a metal plate is attached to the back surface of said semiconductor element, and a surface of the heat-emitting plate is exposed from the mold resin.  
     
     
         4 . The semiconductor device as claimed in  claim 1 , wherein the electrode terminals of said semiconductor element are formed in two rows along circumference sides of the circuit formation surface of said semiconductor element; the electrode terminals of an outer row are connected to the terminals of said substrate formed at positions on an outer side of said openings; and the electrode terminals of an inner row are connected to the terminals of said substrate formed at positions located on an inner side of said openings.  
     
     
         5 . The semiconductor device as claimed in  claim 1 , wherein said substrate is a tape substrate.  
     
     
         6 . A semiconductor device comprising: 
 a first wiring board formed on a substrate and having an opening through which a surface of the substrate is exposed;    a semiconductor element located in the opening and having a back surface opposite to a circuit formation surface, the back surface being bonded to said substrate;    bonding wires which connect electrodes formed on said first wiring board to first electrodes arranged in a peripheral part of the circuit formation surface of said semiconductor element;    a second wiring board facing the circuit formation surface of said semiconductor element and having connection members which are connected to second electrodes arranged in a center part of said circuit formation surface;    first wirings located in said first wiring board;    second wirings located in said second wiring board;    a resin located between said first and second wiring boards;    first external connection terminals formed on said second wiring board and electrically connected to said second electrodes of said semiconductor element through said second wirings in said second wiring board and said connection members;    second external connection terminals formed on said first wiring board electrically connected to said first electrodes of said semiconductor element through wirings in said first wiring board and said bonding wires;    wherein said second wirings are free of contact with said resin;    wherein the first external connection terminals on the second wiring board and the second electrodes on the semiconductor element align respectively, and the second wirings directly connect the first external connection terminals and the connection members by extending in a vertical direction, wherein said connection members of said second wiring board are made of a metal wire formed in the shape of a loop.    
     
     
         7 . A semiconductor device comprising: 
 a first wiring board formed on a substrate and having an opening through which a surface of the substrate is exposed;    a semiconductor element located in the opening and having a back surface opposite to a circuit formation surface, the back surface being bonded to said substrate;    bonding wires which connect electrodes formed on said first wiring board to first electrodes arranged in a peripheral part of the circuit formation surface of said semiconductor element;    a second wiring board facing the circuit formation surface of said semiconductor element and having connection members which are connected to second electrodes arranged in a center part of said circuit formation surface;    first wirings located in said first wiring board;    second wirings located in said second wiring board;    a resin located between said first and second wiring boards;    first external connection terminals formed on said second wiring board and electrically connected to said second electrodes of said semiconductor element through said second wirings in said second wiring board and said connection members;    second external connection terminals formed on said first wiring board electrically connected to said first electrodes of said semiconductor element through wirings in said first wiring board and said bonding wires;    wherein said second wirings are free of contact with said resin;    wherein the first external connection terminals on the second wiring board and the second electrodes on the semiconductor element align respectively, and the second wirings directly connect the first external connection terminals and the connection members by extending in a vertical direction, wherein said second electrodes of a said semiconductor element have an elongated shape, and said connection members of said second wiring board are made of a metal wire or a metal foil formed by stitch-bonding provided along said second electrodes.    
     
     
         8 . A semiconductor device comprising: 
 a first wiring board formed on a substrate and having an opening through which a surface of the substrate is exposed;    a semiconductor element located in the opening and having a back surface opposite to a circuit formation surface, the back surface being bonded to said substrate;    bonding wires which connect electrodes formed on said first wiring board to first electrodes arranged in a peripheral part of the circuit formation surface of said semiconductor element;    a second wiring board facing the circuit formation surface of said semiconductor element and having connection members which are connected to second electrodes arranged in a center part of said circuit formation surface;    first wirings located in said first wiring board;    second wirings located in said second wiring board;    a resin located between said first and second wiring boards;    first external connection terminals formed on said second wiring board and electrically connected to said second electrodes of said semiconductor element through said second wirings in said second wiring board and said connection members;    second external connection terminals formed on said first wiring board electrically connected to said first electrodes of said semiconductor element through wirings in said first wiring board and said bonding wires;    wherein said second wirings are free of contact with said resin;    wherein the first external connection terminals on the second wiring board and the second electrodes on the semiconductor element align respectively, and the second wirings directly connect the first external connection terminals and the connection members by extending in a vertical direction, wherein said substrate is made of an electrically conductive material and the back surface of said semiconductor element is joined to said substrate by an electrically conductive bonding material.    
     
     
         9 . A semiconductor device comprising: 
 a first wiring board formed on a substrate and having an opening through which a surface of the substrate is exposed;    a semiconductor element located in the opening and having a back surface opposite to a circuit formation surface, the back surface being bonded to said substrate;    bonding wires which connect electrodes formed on said first wiring board to first electrodes arranged in a peripheral part of the circuit formation surface of said semiconductor element;    a second wiring board facing the circuit formation surface of said semiconductor element and having connection members which are connected to second electrodes arranged in a center part of said circuit formation surface;    first wirings located in said first wiring board;    second wirings located in said second wiring board;    a resin located between said first and second wiring boards;    first external connection terminals formed on said second wiring board and electrically connected to said second electrodes of said semiconductor element through said second wirings in said second wiring board and said connection members;    second external connection terminals formed on said first wiring board electrically connected to said first electrodes of said semiconductor element through wirings in said first wiring board and said bonding wires;    wherein said second wirings are free of contact with said resin;    wherein the first external connection terminals on the second wiring board and the second electrodes on the semiconductor element align respectively, and the second wirings directly connect the first external connection terminals and the connection members by extending in a vertical direction, wherein said first wiring board is a multi-layer wiring board, and said first electrodes of said semiconductor element are connected to electrodes formed in a different layer of said first wiring board through bonding wires.    
     
     
         10 . A semiconductor device comprising: 
 a first wiring board formed on a substrate and having an opening through which a surface of the substrate is exposed;    a semiconductor element located in the opening and having a back surface opposite to a circuit formation surface, the back surface being bonded to said substrate;    bonding wires which connect electrodes formed on said first wiring board to first electrodes arranged in a peripheral part of the circuit formation surface of said semiconductor element;    a second wiring board facing the circuit formation surface of said semiconductor element and having connection members which are connected to second electrodes arranged in a center part of said circuit formation surface;    first wirings located in said first wiring board;    second wirings located in said second wiring board;    a resin located between said first and second wiring boards;    first external connection terminals formed on said second wiring board and electrically connected to said second electrodes of said semiconductor element through said second wirings in said second wiring board and said connection members;    second external connection terminals formed on said first wiring board electrically connected to said first electrodes of said semiconductor element through wirings in said first wiring board and said bonding wires;    wherein said second wirings are free of contact with said resin;    wherein the first external connection terminals on the second wiring board and the second electrodes on the semiconductor element align respectively, and the second wirings directly connect the first external connection terminals and the connection members by extending in a vertical direction, wherein said second wiring board is a multi-layer wiring board, and a passive element is formed on at least one of said first and second wiring boards.    
     
     
         11 . The semiconductor device as claimed in  claim 10 , wherein passive element is a bypass capacitor.  
     
     
         12 . A semiconductor device comprising: 
 a first wiring board formed on a substrate and having an opening through which a surface of the substrate is exposed;    a semiconductor element located in the opening and having a back surface opposite to a circuit formation surface, the back surface being bonded to said substrate;    bonding wires which connect electrodes formed on said first wiring board to first electrodes arranged in a peripheral part of the circuit formation surface of said semiconductor element;    a second wiring board facing the circuit formation surface of said semiconductor element and having connection members which are connected to second electrodes arranged in a center part of said circuit formation surface;    first wirings located in said first wiring board;    second wirings located in said second wiring board;    a resin located between said first and second wiring boards;    first external connection terminals formed on said second wiring board and electrically connected to said second electrodes of said semiconductor element through said second wirings in said second wiring board and said connection members;    second external connection terminals formed on said first wiring board electrically connected to said first electrodes of said semiconductor element through wirings in said first wiring board and said bonding wires;    wherein said second wirings are free of contact with said resin;    wherein the first external connection terminals on the second wiring board and the second electrodes on the semiconductor element align respectively, and the second wirings directly connect the first external connection terminals and the connection members by extending in a vertical direction, wherein said semiconductor element is located in a recess formed in said substrate; said first wiring board is a flexible board; and electrodes of said flexible board are connected to said first electrodes of said semiconductor element by TAB connection.    
     
     
         13 . A semiconductor device comprising: 
 a semiconductor element which has a first electrodes arranged on a peripheral part of a circuit formation surface, a second electrodes arranged in an area inside an area where the first electrodes are formed on the circuit formation surface, and metal wires connecting between said first electrodes and said second electrodes; and    external connection terminals electrically connected to said first electrodes.    
     
     
         14 . The semiconductor device as claimed in  claim 13 , wherein said metal wires are joined by stitch-bonding to said first and second electrodes.  
     
     
         15 . The semiconductor device as claimed in  claim 13 , wherein said metal wires are joined by ball-bonding to said first and second electrodes.  
     
     
         16 . The semiconductor device as claimed in  claim 13 , wherein said first electrodes are electrodes for signals and electrodes for power supply or grounding, and said second electrodes are electrodes for power supply or grounding.  
     
     
         17 . The semiconductor device as claimed in  claim 13 , wherein said second electrodes have an area larger than said first electrodes.  
     
     
         18 . The semiconductor device as claimed in  claim 13 , wherein said semiconductor element is mounted on a wiring board in a face-up state; said first electrodes are connected to the wiring board by metal wires; and said external connection terminals are formed on a surface of said substrate opposite to a surface on which said semiconductor element is mounted.  
     
     
         19 . The semiconductor device as claimed in  claim 13 , wherein a conductive member is provided at a position facing the circuit formation surface of said semiconductor element, and said metal wires are electrically connected to said conductive member in a part between said first electrodes and said second electrodes.  
     
     
         20 . The semiconductor device as claimed in  claim 13 , wherein said semiconductor element is mounted on a wiring board in a face-down state; said first electrodes are connected to the wiring board by flip-chip bonding; and said external connection terminals are formed on a surface of said substrate opposite to a surface on which said semiconductor element is mounted.  
     
     
         21 . The semiconductor device as claimed in  claim 20 , wherein said metal wires are electrically connected to said conductive member in a part between said first electrodes and said second electrodes.  
     
     
         22 . The semiconductor device as claimed in  claim 13 , wherein said semiconductor element is mounted on a stage of a lead frame in a face-up state; lead terminals of the lead frame serve as said external connection terminals; and said first electrodes are electrically connected to said lead terminals by metal wires.